HYG080N10LS1P

HYG080N10LS1P/B N-Channel Enhancement Mode MOSFET Feature  Pin Description 100V/90A RDS(ON)= 8mΩ (typ.) @ VGS = 10V RDS(ON)= 11.2 mΩ (typ.) @ VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Halogen- Free Devices Available (RoHS Compliant) TO-220FB-3L TO-263-2L Applications  High Frequency Point-of-Load Synchronous Buck Converter  Networking DC-DC Power System N-Channel MOSFET Ordering and Marking Information Package Code P B G080N10 G080N10 XYMXXXXXX XYMXXXXXX P :TO-220FB-3L B :TO-263-2L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr -oduct and/or to this document at any time without notice. www.hymexa.com V1.0 1 HYG080N10LS1P/B Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (Tc=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±20 V Maximum Junction Temperature -55 to 175 °C Storage Temperature Range -55 to 175 °C Tc=25°C 90 A Tc=25°C 360 A Tc=25°C 90 A Tc=100°C 64 A Tc=25°C 150 W Tc=100°C 75 W TJ TSTG IS Source Current-Continuous(Body Diode) Mounted on Large Heat Sink Note: IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance, Junction-to-Case 1 °C/W RθJA Thermal Resistance, Junction-to-Ambient ** 62 °C/W EAS Single Pulsed-Avalanche Energy *** 121.3 mJ * ** *** L=0.3mH Repetitive rating；pulse width limited by max. junction temperature. Surface mounted on FR-4 board. Limited by TJmax , starting TJ=25°C, L = 0.3mH, VDS=80V, VGS =10V. Electrical Characteristics(Tc =25°C Unless Otherwise Noted) Symbol Parameter Test Conditions HYG080N10LS1 Unit Min Typ. Max VGS=0V,IDS=250μA 100 - - V VDS=100V,VGS=0V - - 1 μA - - 50 μA Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current VGS(th) IGSS RDS(ON) TJ=100°C Gate Threshold Voltage VDS=VGS, IDS=250μA 1.0 2.2 3.0 V Gate-Source Leakage Current VGS=±20V,VDS=0V - - 100 nA VGS=10V,IDS=20A - 8 9.6 mΩ VGS=4.5V,IDS=20A - 11.2 15.0 mΩ ISD=20A,VGS=0V - 0.86 1.3 V - 41.5 - ns - 47.6 - nC Drain-Source On-State Resistance Diode Characteristics VSD* trr Qrr Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ISD=20A,dISD/dt=100A/μs www.hymexa.com V1.0 2 HYG080N10LS1P/B Electrical Characteristics (Cont.) (Tc =25°C Unless Otherwise Noted) Symbol Parameter Test Conditions HYG080N10LS1 Min Typ. Max - 2.8 - - 2090 - Unit Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance VDS=25V, - 763 - Crss Reverse Transfer Capacitance Frequency=1.0MHz - 43 - td(ON) Turn-on Delay Time - 10.2 - Tr Turn-on Rise Time VDD=50V,RG=2.5Ω, - 29.5 - td(OFF) Turn-off Delay Time IDS=20A,VGS=10V - 30.0 - - 57.1 - - 33.8 - Tf VGS=0V,VDS=0V,F=1MHz VGS=0V, Turn-off Fall Time Ω pF ns Gate Charge Characteristics Qg（10V） Total Gate Charge Qg（4.5V） Total Gate Charge VDS =80V, VGS=10V, Qgs Gate-Source Charge ID=20A Qgd Gate-Drain Charge 17.3 - 8.6 - - 7.2 - nC Note: *Pulse test，pulse width ≤ 300us，duty cycle ≤ 2% www.hymexa.com V1.0 3 HYG080N10LS1P/B Typical Operating Characteristics Figure 2: Drain Current ID-Drain Current(A) Power Dissipation (w) Figure 1: Power Dissipation Tc-Case Temperature(℃) ID-Drain Current(A) Thermal Impedance Figure 4: Thermal Transient Impedance Zθjc Normalized Transient Figure 3: Safe Operation Area Tc-Case Temperature(℃) Maximum Effective Transient Thermal Impedance, Junction-to-Case VDS-Drain-Source Voltage(V) Figure 6: Drain-Source On Resistance ID-Drain Current(A) RDS(ON)-ON-Resistance(mΩ) Figure 5: Output Characteristics VDS-Drain-Source Voltage (V) ID-Drain Current(A) www.hymexa.com V1.0 4 HYG080N10LS1P/B Typical Operating Characteristics(Cont.) Figure 8: Source-Drain Diode Forward IS-Source Current (A) Normalized On-Resistance Figure 7: On-Resistance vs. Temperature Tj-Junction Temperature (℃) Figure 10: Gate Charge Characteristics C-Capacitance(F) VGS-Gate-Source Voltage (V) Figure 9: Capacitance Characteristics VSD-Source-Drain Voltage(V) VDS-Drain-Source Voltage (V) QG-Gate Charge (nC) www.hymexa.com V1.0 5 HYG080N10LS1P/B Avalanche Test Circuit Switching Time Test Circuit Gate Charge Test Circuit www.hymexa.com V1.0 6 HYG080N10LS1P/B Device Per Unit Package Type Unit Quantity TO-220FB-3L TO-263-2L TO-263-2L Tube Tube Reel 50 50 800 Package Information TO-220FB-3L COMMON DIMENSIONS SYMBOL mm MIN NOM MAX A 4.37 4.57 4.77 A1 1.25 1.30 1.45 A2 2.20 2.40 2.60 b 0.70 0.80 0.95 b2 1.17 1.27 1.47 c 0.40 0.50 0.65 D 15.10 15.60 16.10 D1 8.80 9.10 9.40 D2 5.50 - - E 9.70 10.00 10.30 E3 7.00 - - e 2.54 BSC e1 5.08 BSC H1 6.25 6.50 6.85 L 12.75 13.50 13.80 L1 - 3.10 3.40 ΦP 3.40 3.60 3.80 Q 2.60 2.80 3.00 www.hymexa.com V1.0 7 HYG080N10LS1P/B Package Information TO-263-2L COMMON DIMENSIONS SYMBOL mm MIN NOM MAX A 4.37 4.57 4.77 A1 1.22 1.27 1.42 A2 2.49 2.69 2.89 A3 0 0.13 0.25 b 0.7 0.81 0.96 b1 1.17 1.27 1.47 c 0.3 0.38 0.53 D1 8.5 8.7 8.9 D4 6.6 - - E 9.86 10.16 10.36 E5 7.06 - - e 2.54 BSC H 14.7 15.1 15.5 H2 1.07 1.27 1.47 L 2 2.3 2.6 L1 1.4 1.55 1.7 L4 θ 0.25 BSC 0° 5° www.hymexa.com 9° V1.0 8 HYG080N10LS1P/B Classification Profile Classification Reflow Profiles Profile Feature Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmaxto TP) Liquidous temperature (TL) Time at liquidous (tL) Peak package body Temperature (Tp)* Time (tP)** within 5°C of the specified classification temperature (Tc) Average ramp-down rate (Tpto Tsmax) Time 25°C to peak temperature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 °C 150 °C 150 °C 200 °C 60-120 seconds 60-120 seconds 3 °C/second max. 3°C/second max. 183 °C 217 °C 60-150 seconds 60-150 seconds See Classification Temp in table 1 SeeClassification Tempin table 2 20** seconds 30** seconds 6 °C/second max. 6 °C/second max. 6 minutes max. 8 minutes max. *Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. www.hymexa.com V1.0 9 HYG080N10LS1P/B Table 1.SnPb Eutectic Process – Classification Temperatures (Tc) Package Volume mm³ Volume mm³ Thickness