HY3208AP

HY3208AP/M/B/PS/PM N-Channel Enhancement Mode MOSFET Pin Description Features • 80V/120A RDS(ON) = 5.5 m(typ.) @ VGS=10V • 100% avalanche tested G • Reliable and Rugged • Lead Free and Green Devices Available G D D G S D S S TO-220FB-3L TO-220FB-3S TO-263-2L (RoHS Compliant) G G Applications  D TO-3PS-3L D S S TO-3PM-3S Power Management for Inverter Systems. Ordering and Marking Information N-Channel MOSFET Package Code P HY3208A M HY3208A B HY3208A YYXXXJWW G YYXXXJWW G YYXXXJWW G PS HY3208A PM HY3208A YYXXXJWW G YYXXXJWW G P : TO-220FB-3L B: TO-263-2L PM: TO-3PM-3S Date Code YYXXX WW M : TO-220FB-3S PS: TO-3PS-3L Assembly Material G : Lead Free Device Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate Termination finish;which are fully compliant with RoHS. HUAYI lead -free products meet or exceed the leadFree requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr-oduct and/or to this document at any time without notice. www.hymexa.com 1 V1.0 HY3208AP/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 80 VGSS Gate-Source Voltage ±25 Maximum Junction Temperature 175 °C 55 to- 175 °C TC=25°C 120 A TC=25°C 480** A TC=25°C 120 TC=100°C 85 TC=25°C 227 TC=100°C 113 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case 0.66 RJA Thermal Resistance-Junction to Ambient 62.5 A W °C/W Avalanche Ratings EAS Note： * Avalanche Energy, Single Pulsed L=0.5mH mJ 630*** Repetitive rating ; pulse width limiited by junction temperature ** Drain current is limited by junction temperature *** VD=64V Electrical Characteristics Symbol Parameter (TC = 25C Unless Otherwise Noted) Test Conditions HY3208A Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON)* VGS=0V, IDS=250A 80 - - VDS= 80 V, VGS=0V - - 1 - - 10 TJ=85°C V A Gate Threshold Voltage VDS=VGS, IDS=250A 2.0 3.0 4.0 V Gate Leakage Current VGS=±25V, VDS=0V - - ±100 nA Drain-Source On-state Resistance VGS=10V, IDS=60A - 5.5 7.0 m ISD=60A, VGS=0V - 0.8 1 V - 46 - ns - 98 - nC Diode Characteristics VSD * Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge www.hymexa.com ISD=60A, dlSD/dt=100A/s 2 V1.0 HY3208AP/M/B/PS/PM Electrical Characteristics (Cont.) Symbol Parameter (TC = 25C Unless Otherwise Noted) Test Conditions HY3208A Min. Typ. Max. - 0.6 - - 3680 - - 539 - - 346 - - 25 - - 39 - - 79 - - 50 - - 97 - - 17 - - 34 - Unit Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time Tf VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=25V, Frequency=1.0MHz VDD=40V, RG= 6 , IDS =60A, VGS=10V, Turn-off Fall Time  pF ns Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=64V, VGS=10V, IDS=60A Note * : Pulse test ; pulse width 300s, duty cycle2%. www.hymexa.com nC . 3 V1.0 HY3208AP/M/B/PS/PM Typical Operating Characteristics Power Dissipation Drain Current 280 135 120 ID - Drain Current (A) Ptot - Power (W) 240 200 160 120 80 limited by package 105 90 75 60 45 30 40 15 o 0 TC=25 C 0 o 20 40 60 0 80 100 120 140 160 180 200 TC=25 C,VG=10V 0 20 40 60 80 100 120 140 160 180 200 Tc - Case Temperature (°C) Tc - Case Temperature (°C) Safe Operation Area 600 Rd s(o n) Lim it ID - Drain Current (A) 100us 100 1ms 10ms 10 DC 1 o TC=25 C 0.1 0.01 0.1 1 10 100 500 VDS - Drain - Source Voltage (V) Thermal Transient Impedance 1 Normalized Effective Transient Duty = 0.5 0.2 0.1 0.1 0.05 0.01 0.02 0.01 0.001 Single Mounted on minimum pad o RJA : 62.5 C/W 0.0001 0.0001 0.001 0.1 0.01 1 10 Square Wave Pulse Duration (sec) www.hymexa.com 4 V1.0 HY3208AP/M/B/PS/PM Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 160 8.0 140 ID - Drain Current (A) 120 RDS(ON) - On - Resistance (m) VGS= 6,7,8,9,10V 5.5V 100 5V 80 60 4.5V 40 20 0 7.0 VGS =10V 6.0 5.0 4.0 3.0 0 1 2 3 4 5 0 6 40 80 ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage 1.6 Normalized Threshold Vlotage RDS(ON) - On - Resistance (m) 12 10 8 6 4 5 6 7 8 9 VGS - Gate - Source Voltage (V) www.hymexa.com 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 10 200 IDS =250A IDS=60A 4 160 VDS - Drain-Source Voltage (V) 14 2 120 0 25 50 75 100 125 150 175 Tj - Junction Temperature (°C) 5 V1.0 HY3208AP/M/B/PS/PM Typical Operating Characteristics (Cont.) Source-Drain Diode Forward Drain-Source On Resistance 160 2.4 VGS = 10V 2.2 100 IDS = 60A 1.8 IS - Source Current (A) Normalized On Resistance 2.0 1.6 1.4 1.2 1.0 0.8 o Tj=175 C 10 o Tj=25 C 1 0.6 0.4 o 0.2 -50 -25 RON@Tj=25 C: 5.5m 0 25 50 0.1 0.0 75 100 125 150 175 0.4 0.6 0.8 1.0 1.2 Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) Capacitance Gate Charge 1.4 10 5500 Frequency=1MHz 5000 VDS= 64V 9 4000 VGS - Gate-source Voltage (V) 4500 C - Capacitance (pF) 0.2 Ciss 3500 3000 2500 2000 1500 1000 Coss 500 5 10 15 20 25 30 35 7 6 5 4 3 2 0 40 VDS - Drain - Source Voltage (V) www.hymexa.com 8 1 Crss 0 IDS= 60A 0 15 30 45 60 75 90 105 120 QG - Gate Charge (nC) 6 V1.0 HY3208AP/M/B/PS/PM Avalanche Test Circuit Switching Time Test Circuit Gate Charge Test Circuit www.hymexa.com 7 V1.0 HY3208AP/M/B/PS/PM 'HYLFH3HU8QLW 3DFNDJH7\SH 8QLW 4XDQWLW\ 72)%/ 7XEH  3DFNDJH,QIRUPDWLRQ 72)%/ &20021',0(16,216 6