HY4004B

HY4004P/B N-Channel Enhancement Mode MOSFET Features • Pin Description 40V/208A RDS(ON) = 2.5 m(typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available S GD (RoHS Compliant) GD S TO-220FB-3L TO-263-2L Applications • Switching application • Power Management for DC/DC Ordering and Marking Information P HY4004 N-Channel MOSFET Package Code P : TO-220FB-3L B HY4004 Date Code YYXXX WW YYXXXJWW G YYXXXJWW G B: TO-263-2L Assembly Material G : Lead Free Device Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr -oduct and/or to this document at any time without notice. www.hymexa.com 1 V1.0 HY4004P/B Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 40 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 175 °C -55 to 175 °C 208 A 750** A TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current TC=25°C V Mounted on Large Heat Sink IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation = TC 25°C = TC 25°C 208 TC 100°C = A 138 = TC 25°C 217 W 108 TC=100°C RJC Thermal Resistance-Junction to Case 0.69 RJA Thermal Resistance-Junction to Ambient 62.5 °C/W Avalanche Ratings EAS Avalanche Energy, Single Pulsed L=0.5mH J 1.4*** Note： * Repetitive rating ; pulse width limiited by junction temperature ** Drain current is limited by junction temperature *** VD=32V Electrical Characteristics Symbol Parameter (TC = 25C Unless Otherwise Noted) Test Conditions HY4004 Min. Typ. Max. 40 - - - - 1 - - 10 Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON)* VGS=0V, IDS=250A VDS= =40V, VGS 0V TJ 85°C = V A Gate Threshold Voltage VDS=VGS, IDS=250A 2.0 3.0 4.0 V Gate Leakage Current VGS=±20V, = VDS 0V - - ±100 nA Drain-Source On-state Resistance VGS=10V, IDS=104A - 2.5 3.2 m Diode Characteristics VSD * Diode Forward Voltage ISD=104 A, VGS=0V - 0.8 1.2 V trr Reverse Recovery Time ISD=104A, - 37 - ns Qrr Reverse Recovery Charge dlSD/dt=100A/s - 60 - nC www.hymexa.com 2 V1.0 HY4004P/B Electrical Characteristics (Cont.) Symbol Parameter (TC = 25C Unless Otherwise Noted) Test Conditions HY4004 Min. Typ. Max. - 1.0 - - 5712 - - 1465 - - 596 - - 35 - - 20 - - 45 - - 62 - - 158 - - 30 - - 66 - Unit Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time Tf VGS=0V,V= = 1MHz DS 0V,F VGS=0V, VDS=25V, Frequency=1.0MHz VDD=20V, R G=6 , I DS =104A, VGS=10V, Turn-off Fall Time  pF ns Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=32V, VGS=10V, IDS=104A nC Note * : Pulse test ; pulse width 300s, duty cycle2%. www.hymexa.com 3 V1.0 HY4004P/B Typical Operating Characteristics Power Dissipation Drain Current 275 ID - Drain Current (A) Ptot - Power (W) 250 200 150 100 212 200 limited by package 175 150 125 100 75 50 50 o 0 TC=25 C 0 o 25 20 40 60 80 100 120 140 160 180 200 TC=25 C,VG=10V 0 20 40 60 80 100 120 140 160 180 200 Tc - Case Temperature (°C) Tc - Case Temperature (°C) Safe Operation Area ID - Drain Current (A) 1000 100 it Lim n) o s( Rd 100us 10ms 1ms 10 DC 1 0.1 10 1 100 400 VDS - Drain - Source Voltage (V) Thermal Transient Impedance 1 Normalized Effective Transient Duty = 0.5 0.2 0.1 0.1 0.05 0.01 0.02 0.01 0.001 Single Mounted on minimum pad o RJA : 62.5 C/W 0.0001 0.0001 0.001 0.1 0.01 1 10 Square Wave Pulse Duration (sec) www.hymexa.com 4 V1.0 HY4004P/B Typical Operating Characteristics (Cont.) Drain-Source On Resistance Output Characteristics 400 4.5 VGS= 5.5,6,7,8,9,10V RDS(ON) - On - Resistance (mΩ) 350 ID - Drain Current (A) 300 5V 250 200 150 100 4.5V 50 0 0.0 4V 1.0 2.0 3.0 4.0 5.0 4.0 3.5 2.5 2.0 1.5 1.0 6.0 VGS=10V 3.0 0 50 VDS - Drain - Source Voltage (V) 100 150 Gate Threshold Voltage Gate-Source On Resistance 1.6 IDS =250μA IDS=104A 6 1.4 Normalized Threshold Voltage RDS(ON) - On - Resistance (mΩ) 250 ID - Drain Current (A) 7 5 4 3 2 1 0 200 3 4 5 6 7 8 9 1.0 0.8 0.6 0.4 0.2 -50 -25 10 VGS - Gate - Source Voltage (V) www.hymexa.com 1.2 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 5 V1.0 HY4004P/B Typical Operating Characteristics (Cont.) Source-Drain Diode Forward Drain-Source On Resistance 2.0 o Tj=25 C 100 IDS = 104A 1.8 1.6 IS - Source Current (A) Normalized On Resistance 200 VGS = 10V 1.4 1.2 1.0 0.8 10 o Tj=150 C 1 0.6 o RON@Tj=25 C: 2.5mΩ 0.4 -50 -25 0 25 50 75 0.1 0.0 100 125 150 1.0 1.2 Gate Charge VDS= 32V 9 VGS - Gate-source Voltage (V) 7500 1.4 10 9000 C - Capacitance (pF) 0.8 Capacitance Frequency=1MHz Ciss 6000 4500 3000 Coss IDS= 104A 8 7 6 5 4 3 2 1 Crss 0 0.6 VSD - Source - Drain Voltage (V) 10500 0 0.4 Tj - Junction Temperature (°C) 12000 1500 0.2 8 16 24 32 0 40 VDS - Drain - Source Voltage (V) www.hymexa.com 0 40 80 120 160 200 QG - Gate Charge (nC) 6 V1.0 HY4004P/B Avalanche Test Circuit VDS L tp VDSX(SUS) DUT VDS IAS RG VDD VDD IL tp EAS 0.01Ω tAV Avalanche Test Circuit VDS RD V DS DUT RG 90% VGS VDD 10% VGS tp td(on) tr www.hymexa.com 7 td(off) tf V1.0 HY4004P/B Package Information TO-220FB-3L COMMON DIMENSIONS SYMBOL www.hymexa.com mm MIN MIN N MAX A 4.37 4.57 4.77 A1 1.25 1.30 1.45 A2 2.20 2.40 2.60 b 0.70 0.80 0.95 b2 1.17 1.27 1.47 c 0.40 0.50 0.65 D 15.10 15.60 16.10 D1 8.80 9.10 9.40 D2 5.50 - - E 9.70 10.00 10.30 E3 7.00 - - e 2.54 BSC e1 5.08 BSC H1 6.25 6.50 6.85 L 12.75 13.50 13.80 L1 - 3.10 3.40 ĭ3 3.40 3.60 3.80 Q 2.60 2.80 3.00 8 V1.0 HY4004P/B TO-263-2L COMMON DIMENSIONS SYMBOL mm MIN NOM MAX A 4.37 4.57 4.77 A1 1.22 1.27 1.42 A2 2.49 2.69 2.89 A3 0 0.13 0.25 b 0.7 0.81 0.96 b1 1.17 1.27 1.47 c 0.3 0.38 0.53 D1 8.5 8.7 8.9 D4 6.6 - - E 9.86 10.16 10.36 E5 7.06 - - e 2.54 BSC H 14.7 15.1 15.5 H2 1.07 1.27 1.47 L 2 2.3 2.6 L1 1.4 1.55 1.7 L4 ș www.hymexa.com 0.25 BSC 0° 9 5° 9° V1.0 HY4004P/B Devices Per Unit Package Type Unit Quantity TO-220FB-3L Tube 50 TO-263-2L Tube 50 Classification Profile www.hymexa.com 10 V1.0 HY4004P/B Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 C 150 C 60-120 seconds 150 C 200 C 60-120 seconds 3 C/second max. 3C/second max. 183 C 60-150 seconds 217 C 60-150 seconds See Classification Temp in table 1 See Classification Temp in table 2 Time (tP)** within 5C of the specified classification temperature (Tc) 20** seconds 30** seconds Average ramp-down rate (Tp to Tsmax) 6 C/second max. 6 C/second max. 6 minutes max. 8 minutes max. Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmax to TP) Liquidous temperature (TL) Time at liquidous (tL) Peak (Tp)* package body Temperature Time 25C to peak temperature * Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) 3 Package Volume mm Thickness