HY4008B6

HY4008B6 N-Channel Enhancement Mode MOSFET Feature Description z Pin Description 80V/255A RDS(ON)= 2.6mΩ(typ.)@VGS = 10V z 100% Avalanche Tested z Reliable and Rugged z Lead Free and Green Devices Available Pin7 (RoHS Compliant) Pin1 TO-263-6L Pin4 Applications Pin1 z Switch application z Brushless Motor Drive Pin2,3,5,6,7 N-Channel MOSFET Ordering and Marking Information Package Code B6 B6:TO-263-6L HY4008 Date Code YYXXX WW YYXXXJWW G Assembly Material G:Lead Free Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS. HUAYI lead -free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defi nes “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr -oduct and/or to this document at any time without notice. www.hymexa.com V1.0 1 HY4008B6 Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (Tc=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 80 V VGSS Gate-Source Voltage ±25 V Maximum Junction Temperature 175 °C -55 to 175 °C Tc=25°C 255 A Tc=25°C 918 A Tc=25°C 255 A Tc=100°C 180 A Tc=25°C 375 W Tc=100°C 187 W 0.40 °C/W 40 °C/W 1512 mJ TJ TSTG IS Storage Temperature Range Source Current-Continuous(Body Diode) Mounted on Large Heat Sink Note: IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RTJC Thermal Resistance, Junction-to-Case RTJA Thermal Resistance, Junction-to-Ambient ** EAS SinglePulsed-Avalanche Energy *** * ** *** L=0.5mH Repetitive rating˗pulse width limited by max.junction temperature. Surface mounted on FR-4 board. Limited by TJmax , starting TJ=25°C, L =0.5mH, RG= 25Ω, VGS =10V. Electrical Characteristics(Tc =25°C Unless Otherwise Noted) Symbol Parameter Test Conditions HY4008 Unit Min Typ. Max 80 - - V - - 1 μA - - 5 μA 4 V Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current VGS(th) IGSS RDS(ON)* VGS=0V,IDS=250μA VDS=80V,VGS=0V TJ=55°C Gate Threshold Voltage VDS=VGS, IDS=250μA 2 3 Gate-Source Leakage Current VGS=f25V,VDS=0V - - Drain-Source On-State Resistance VGS=10V,IDS=110A - ISD=110A,VGS=0V ±100 nA 2.6 3.2 mΩ - 0.8 1.2 V - 30 - ns - 52 - nC Diode Characteristics VSD* Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=110A,dISD/dt=100A/μs www.hymexa.com V1.0 2 HY4008B6 Electrical Characteristics (Cont.) (Tc =25°C Unless Otherwise Noted) Symbol Parameter Test Conditions HY4008 Min Typ. Max Unit Dynamic Characteristics - 1.9 - Input Capacitance VGS=0V,VDS=0V,F=1 MHz VGS=0V, - 7457 - Coss Output Capacitance VDS=25V, - 1217 - Crss Reverse Transfer Capacitance Frequency=1.0MHz - 822 - td(ON) Turn-on Delay Time - 28 - Tr Turn-on Rise Time VDD=50V,RG=6Ω, - 18 - td(OFF) Turn-off Delay Time IDS=110A,VGS=10V - 42 - - 54 - - 209 - - 33 - - 83 - RG Gate Resistance Ciss Tf Turn-off Fall Time Gate Charge Ω pF ns Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS =64V, VGS=10V, ID=110A nC Note: *Pulse testˈpulse width ≤ 300usˈduty cycle ≤ 2% www.hymexa.com V1.0 3 HY4008B6 Typical Operating Characteristics Figure 1: Power Dissipation ID-Drain Current(A) Power Dissipation (w) Figure 2: Drain Current Tc-Case Temperature(ć) Tc-Case Temperature(ć) Figure 4: Thermal Transient Impedance Zθ jc ID-Drain Current(A) Normalized Transient Figure 3: Safe Operation Area Maximum Effective Transient Thermal Impedance, Junction-to-Case VDS-Drain-Source Voltage(V) Figure 6: Drain-Source On Resistance ID-Drain Current(A) RDS(ON)-ON-Resistance(mΩ) Figure 5: Output Characteristics VDS-Drain-Source Voltage (V) ID-Drain Current(A) www.hymexa.com V1.0 4 HY4008B6 Typical Operating Characteristics(Cont.) Figure 8: Source-Drain Diode Forward IS-Source Current (A) Normalized On-Resistance Figure 7: On-Resistance vs. Temperature = Figure 9: Capacitance Characteristics Figure 10: Gate Charge Characteristics VGS-Gate-Source Voltage (V) VSD-Source-Drain Voltage(V) C-Capacitance(pF) Tj-Junction Temperature (ć) VDS-Drain-Source Voltage (V) QG-Gate Charge (Q&) www.hymexa.com V1.0 5 HY4008B6 Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Gate Charge Test Circuit and Waveforms www.hymexa.com V1.0 6 HY4008B6 Device Per Unit Package Type Unit Quantity TO-263-6L Tube 50 Package Information TO-263-6L www.hymexa.com V1.0 7 HY4008B6 Classification Profile Classification Reflow Profiles Profile Feature Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmaxto TP) Liquidous temperature (TL) Time at liquidous (tL) Peak package body Temperature (Tp)* Time (tP)** within 5°C of the specified classification temperature (T c) Average ramp-down rate (Tpto Tsmax) Time 25°C to peak temperature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 °C 150 °C 150 °C 200 °C 60-120 seconds 60-120 seconds 3 °C/second max. 3°C/second max. 183 °C 217 °C 60-150 seconds 60-150 seconds See Classification Temp in table 1 SeeClassification Tempin table 2 20** seconds 30** seconds 6 °C/second max. 6 °C/second max. 6 minutes max. 8 minutes max. *Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. www.hymexa.com V1.0 8 HY4008B6 Table 1.SnPb Eutectic Process – Classification Temperatures (Tc) Package Volume mmϢ Volume mmϢ Thickness