HY050N08P/B
N-Channel Enhancement Mode MOSFET
Feature Description
z
Pin Description
85V/105A
RDS(ON)= 4.7mΩ(typ.)@VGS = 10V
z
100% Avalanche Tested
z
Reliable and Rugged
z
Lead Free and Green Devices Available
G
G
D
D
S
S
(RoHS Compliant)
TO-263-2L
TO-220FB-3L
Applications
z
Switch application
z
DC/DC Converter
Ordering and Marking Information
Package Code
P
B
HY050N08
HY050N08
YYXXXJWW G
YYXXXJWW G
P:TO-220FB-3L
Date Code
YYXXX WW
B:TO-263-2L
Assembly Material
G:Lead Free
Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS. HUAYI lead -free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr
-oduct and/or to this document at any time without notice.
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V1.0
1
HY050N08P/B
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (Tc=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
85
V
VGSS
Gate-Source Voltage
±20
V
Maximum Junction Temperature
175
°C
-55 to 175
°C
Tc=25°C
105
A
Tc=25°C
420
A
Tc=25°C
105
A
Tc=100°C
74
A
Tc=25°C
166
W
Tc=100°C
83
W
TJ
TSTG
IS
Storage Temperature Range
Source Current-Continuous(Body Diode)
Mounted on Large Heat Sink
Note:
IDM
Pulsed Drain Current *
ID
Continuous Drain Current
PD
Maximum Power Dissipation
RTJC
Thermal Resistance, Junction-to-Case**
0.9
°C/W
RTJA
Thermal Resistance, Junction-to-Ambient
62.5
°C/W
EAS
SinglePulsed-Avalanche Energy ***
378
mJ
*
**
***
L=0.3mH
Repetitive rating˗pulse width limited by max.junction temperature.
Drain current is limited by junction temperature
Limited by TJmax , starting TJ=25°C, L = 0.3mH, VD= 68V, VGS =10V.
Electrical Characteristics(Tc =25°C Unless Otherwise Noted)
Symbol
Parameter
Test Conditions
HY050N08
Unit
Min
Typ.
Max
85
-
-
V
-
-
1
μA
-
-
5
μA
4
V
Static Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Drain-to-Source Leakage Current
VGS(th)
IGSS
RDS(ON)*
VGS=0V,IDS=250μA
VDS=85V,VGS=0V
TJ=55°C
Gate Threshold Voltage
VDS=VGS, IDS=250μA
2
3
Gate-Source Leakage Current
VGS=f20V,VDS=0V
-
-
Drain-Source On-State Resistance
VGS=10V,IDS=40A
-
ISD=40A,VGS=0V
±100
nA
4.7
5.5
mΩ
-
0.9
1.2
V
-
53
-
ns
-
78
-
nC
Diode Characteristics
VSD*
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ISD=40A,dISD/dt=100A/μs
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V1.0
2
HY050N08P/B
Electrical Characteristics (Cont.) (Tc =25°C Unless Otherwise Noted)
Symbol
Parameter
Test Conditions
HY050N08
Min
Typ.
Max
-
3.8
-
-
3417
-
Unit
Dynamic Characteristics
RG
Gate Resistance
Ciss
Input Capacitance
VGS=0V,VDS=0V,F=1
MHz
VGS=0V,
Coss
Output Capacitance
VDS=25V,
-
1649
-
Crss
Reverse Transfer Capacitance
Frequency=1.0MHz
-
76
-
td(ON)
Turn-on Delay Time
-
20
-
Tr
Turn-on Rise Time
VDD=20V,RG=4Ω,
-
30
-
td(OFF)
Turn-off Delay Time
IDS=40A,VGS=10V
-
24
-
-
21
-
-
64.3
-
-
15.2
-
-
19.5
-
Tf
Turn-off Fall Time
Gate Charge
Ω
pF
ns
Characteristics
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS =68V, VGS=10V,
ID=30A
nC
Note: *Pulse testˈpulse width ≤ 300usˈduty cycle ≤ 2%
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V1.0
3
HY050N08P/B
Typical Operating Characteristics
Figure 2: Drain Current
Power Dissipation (w)
ID-Drain Current(A)
Figure 1: Power Dissipation
Tc-Case Temperature(ć)
Tc-Case Temperature(ć)
Thermal
Z©jc
ID-Drain Current(A)
Impedance
Figure 4: Thermal Transient Impedance
Normalized Transient
Figure 3: Safe Operation Area
Maximum Effective Transient Thermal
Impedance, Junction-to-Case
VDS-Drain-Source Voltage(V)
Figure 6: Drain-Source On Resistance
ID-Drain Current(A)
RDS(ON)-ON-Resistance(Ω)
Figure 5: Output Characteristics
VDS-Drain-Source Voltage (V)
ID-Drain Current(A)
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V1.0
4
HY050N08P/B
Typical Operating Characteristics(Cont.)
Figure 8: Source-Drain Diode Forward
IS-Source Current (A)
Normalized On-Resistance
Figure 7: On-Resistance vs. Temperature
Figure 9: Capacitance Characteristics
Figure 10: Gate Charge Characteristics
VGS-Gate-Source Voltage (V)
VSD-Source-Drain Voltage(V)
C-Capacitance(pF)
Tj-Junction Temperature (ć)
VDS-Drain-Source Voltage (V)
QG-Gate Charge (Q&)
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V1.0
5
HY050N08P/B
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
Gate Charge Test Circuit and Waveforms
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V1.0
6
HY050N08P/B
Device Per Unit
Package Type
Unit
Quantity
TO-220FB-3L
Tube
50
Package Information
TO-220FB-3L
COMMON DIMENSIONS
SYMBOL
mm
MIN
NOM
MAX
A
4.37
4.57
4.77
A1
1.25
1.30
1.45
A2
2.20
2.40
2.60
b
0.70
0.80
0.95
b2
1.17
1.27
1.47
c
0.40
0.50
0.65
D
15.10
15.60
16.10
D1
8.80
9.10
9.40
D2
5.50
-
-
E
9.70
10.00
10.30
E3
7.00
-
-
e
2.54 BSC
e1
5.08 BSC
H1
6.25
6.50
6.85
L
12.75
13.50
13.80
L1
-
3.10
3.40
ΦP
3.40
3.60
3.80
Q
2.60
2.80
3.00
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V1.0
7
HY050N08P/B
Device Per Unit
Package Type
Unit
Quantity
TO-263-2L
Reel
50
Package Information
TO-263-2L
COMMON DIMENSIONS
SYMBOL
mm
MIN
NOM
MAX
A
4.37
4.57
4.77
A1
1.22
1.27
1.42
A2
2.49
2.69
2.89
A3
0
0.13
0.25
b
0.7
0.81
0.96
b1
1.17
1.27
1.47
c
0.3
0.38
0.53
D1
8.5
8.7
8.9
D4
6.6
-
-
E
9.86
10.16
10.36
E5
7.06
-
-
e
2.54 BSC
H
14.7
15.1
15.5
H2
1.07
1.27
1.47
L
2
2.3
2.6
L1
1.4
1.55
1.7
L4
θ
0.25 BSC
0°
5°
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9°
V1.0
8
HY050N08P/B
Classification Profile
Classification Reflow Profiles
Profile Feature
Preheat & Soak
Temperature min (Tsmin)
Temperature max (Tsmax)
Time (Tsmin to Tsmax) (ts)
Average ramp-up rate
(Tsmaxto TP)
Liquidous temperature (TL)
Time at liquidous (tL)
Peak package body Temperature
(Tp)*
Time (tP)** within 5°C of the specified
classification temperature (Tc)
Average ramp-down rate (Tpto Tsmax)
Time 25°C to peak temperature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
100 °C
150 °C
150 °C
200 °C
60-120 seconds
60-120 seconds
3 °C/second max.
3°C/second max.
183 °C
217 °C
60-150 seconds
60-150 seconds
See Classification Temp in table 1
SeeClassification Tempin table 2
20** seconds
30** seconds
6 °C/second max.
6 °C/second max.
6 minutes max.
8 minutes max.
*Tolerance for peak profile Temperature (T p) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
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V1.0
9
HY050N08P/B
Table 1.SnPb Eutectic Process – Classification Temperatures (Tc)
Package
Volume mmϢ
Volume mmϢ
Thickness
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