HY12P03S

HY12P03S P -Channel Enhancement Mode MOSFET Features • Pin Description -30V / -12A D RDS(ON)=11.5 m Ω (typ.) @ VGS=-10V RDS(ON)=16.5 m Ω (typ.) @ VGS=-4.5V • • • Avalanche Rated S Reliable and Rugged Lead Free and Green Devices Available S S D D D G Top View of SOP-8 (RoHS Compliant) Applications · Power Management in DC/DC Converter P-Channel MOSFET Ordering and Marking Information Package Code S HY12P03 S : SOP-8 ÿ YYXXXJWW G Date Code YYXXX WW Note: Assembly Material G : Lead Free Device HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. HOOYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 1 www.hooyi.cc 151229 HY12P03S Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage -30 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 150 °C -55 to 150 °C TC=25°C -12 A TC=25°C -48** A TC=25°C -12 TC=70°C -10 TC=25°C 3.1 TC=70°C 2.0 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case 40 RθJA Thermal Resistance-Junction to Ambient 75 A W °C/W Avalanche Ratings EAS Avalanche Energy, Single Pulsed mJ 100*** L=0.3mH Note： * Repetitive rating ; pulse width limiited by junction temperature ** Drain current is limited by junction temperature *** VD=-24V Electrical Characteristics Symbol Parameter (TC = 25°C Unless Otherwise Noted) Test Conditions HY12P03 Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS VGS=0V, IDS=-250µA -30 VDS= -30 V, VGS=0V - - -1 - - -5 -1.0 -2.0 -3.0 V TJ=55°C - - V µA Gate Threshold Voltage VDS=VGS, IDS=-250µA Gate Leakage Current VGS=±20V, VDS=0V - - ±100 nA VGS=-10V, I DS= -12 A - 11.5 15.0 mΩ VGS= -4.5V, I DS= -7 A - 16.5 20.5 mΩ ISD=-1 A, VGS=0V - -0.7 -1.0 V - 40 - ns - 22 - nC RDS(ON) * Drain-Source On-state Resistance Diode Characteristics VSD * Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IDS=-12 A, dl SD/dt=100A/µs 2 www.hooyi.cc HY12P03S Electrical Characteristics (Cont.) Symbol Parameter (TC = 25°C Unless Otherwise Noted) Test Conditions HY12P03 Min. Typ. Max. - 2.0 - - 2400 - - 370 - - 295 - - 11 - - 9 - - 24 - - 12 - - 34 - - 4 - - 8.5 - Unit Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time Tf VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=-15V, Frequency=1.0MHz VDD= -15V, RG =1 Ω, IDS=-12A, VGS =-10V, Turn-off Fall Time Ω pF ns Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=-24 V, VGS=-10V, IDS=-12A Note * : Pulse test ; pulse width ≤300µs, duty cycle≤2%. 3 www.hooyi.cc nC HY12P03S Typical Operating Characteristics Drain Current Power Dissipation 4.0 18 3.5 16 14 -I D - Drain Current (A) Ptot - Power (W) 3.0 2.5 2.0 1.5 1.0 0.5 T A=25 C 0 20 10 8 6 4 2 o 0.0 12 o 40 60 80 0 100 120 140 160 T A=25 C,VG=-10V 0 20 40 60 80 100 120 140 160 Tc - Case Temperature (°C) Tc - Case Temperature (°C) Safe Operation Area 100 R ds (o n) Li m it -I D - Drain Current (A) 500 10 10 us 100us 1.0 1ms DC O TC=25 C 0.1 0.1 Thermal Response ( Z thJC ) °C / W 10 100 500 -VDS - -Drain - Source Voltage (V) Thermal Transient Impedance 100 10 1 10ms D = 0.50 0.20 0.10 1 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = Pdm x Zthjc + Tc 0.05 0.02 0.1 0.01 Pdm SINGLE PULSE ( THERMAL RESPONSE ) t1 t2 0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.hooyi.cc 10 HY12P03S Typical Operating Characteristics (Cont.) Drain-Source On Resistance Output Characteristics 32 20 18 28 RDS(ON) - On - Resistance (mΩ) VGS= -4.0,-4.5,-10V -ID - Drain Current (A) 16 14 -3.5V 12 10 -3V 8 6 4 -2V 16 12 8 0 0 1 2 VGS=-4.5V 20 VGS=-10V 4 2 0 24 3 4 5 0 5 -V DS - Drain - Source Voltage (V) 1.6 IDS=-12A 25 IDS =-250uA 1.4 Normalized Threshold Voltage RDS(ON) - On - Resistance (mW) 20 Gate Threshold Voltage 20 18 16 14 12 10 8 15 -I D - Drain Current (A) Gate-Source On Resistance 22 10 2 3 4 5 6 7 8 9 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 10 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) -VGS - Gate - Source Voltage (V) 5 www.hooyi.cc HY12P03S Typical Operating Characteristics (Cont.) Source-Drain Diode Forward Drain-Source On Resistance 4.0 IDS = -12A 10 3.2 -I S - Source Current (A) Normalized On Resistance 3.6 30 V GS = -10V 2.8 2.4 2.0 1.6 1.2 0.8 o Tj=150 C o Tj=25 C 1 0.4 o RON@T j=25 C:11.5mW 0.0 -50 -25 0 25 50 75 0.1 0.0 100 125 150 Tj - Junction Temperature (°C) 0.2 0.4 1.2 1.4 10 Frequency=1MHz VDS= -24V 9 -VGS - Gate-source Voltage (V) 4500 4000 C - Capacitance (pF) 1.0 Gate Charge 5000 3500 3000 Ciss 2500 2000 1500 1000 Coss 0 0 0.8 -VSD - Source - Drain Voltage (V) Capacitance 500 0.6 Crss 5 IDS= -12A 8 7 6 5 4 3 2 1 10 15 20 25 30 35 0 40 -VDS - Drain - Source Voltage (V) 0 6 12 18 24 30 36 QG - Gate Charge (nC) 6 www.hooyi.cc 42 HY12P03S Avalanche Test Circuit and Waveforms VDS tAV L DUT EAS VDD RG VDD IAS tp IL VDS 0.01W tp VDSX(SUS) Switching Time Test Circuit and Waveforms VDS RD td(on) tr DUT RG td(off) tf VGS 10% VGS VDD tp 90% VDS 7 www.hooyi.cc HY12P03S Package Information SOP-8 -T- SEATING PLANE < 4 mils D E E1 SEE VIEW A h X 45 ° c A1 A A2 0.25 b e GAUGE PLANE SEATING PLANE L VIEW A S Y M B O L A RECOMMENDED LAND PATTERN 1.27 SOP-8 MILLIMETERS MIN. INCHES - MAX. 1.75 0.10 A2 - MAX. 0.069 0.25 0.004 0.010 1.25 - 0.049 - b 0.31 0.51 0.012 0.020 c 0.17 0.25 0.007 0.010 D 4.80 5.00 0.189 0.197 E E1 5.80 6.20 0.228 0.244 3.80 4.00 0.150 0.157 A1 e MIN. 1.27 BSC 2.2 5.74 2.87 0.050 BSC h 0.25 0.50 0.010 0.020 L 0.40 1.27 0.016 0.050 0 0° 8° 0° 8° Note: 1. Follow JEDEC MS-012 AA. 2. Dimension D” does not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 6 mil per side. 3. Dimension E” does not include inter-lead flash or protrusions. Inter-lead flash and protrusions shall not exceed 10 mil per side. 8 0.635 0.8 UNIT: mm www.hooyi.cc HY12P03S Carrier Tape & Reel Dimensions P0 P2 P1 A B0 W F E1 OD0 K0 A0 B A OD1 B T SECTION A-A SECTION B-B H A d T1 Application A 330.0 2.00 50 MIN. P0 P1 P2 4.0 0.10 8.0 0.10 2.0 0.05 SOP-8 H T1 C d D W E1 F 12.4+2.00 13.0+0.50 -0.00 -0.20 1.5 MIN. 20.2 MIN. 12.0 0.30 1.75 0.10 5.5 0.05 D0 1.5+0.10 -0.00 D1 1.5 MIN. T A0 B0 K0 0.6+0.00 6.40 0.20 5.20 0.20 2.10 0.20 -0.40 (mm) Devices Per Unit Package Type Unit Quantity SOP-8L Reel 2500 9 www.hooyi.cc HY12P03S Taping Direction Information SOP-8 USER DIRECTION OF FEED Classification Profile 10 www.hooyi.cc HY12P03S Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 °C 150 °C 60-120 seconds 150 °C 200 °C 60-120 seconds 3 °C/second max. 3°C/second max. 183 °C 60-150 seconds 217 °C 60-150 seconds See Classification Temp in table 1 See Classification Temp in table 2 Time (tP)** within 5°C of the specified classification temperature (Tc) 20** seconds 30** seconds Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. 6 minutes max. 8 minutes max. Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmax to TP) Liquidous temperature (TL) Time at liquidous (tL) Peak (Tp)* package body Temperature Time 25°C to peak temperature * Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) Package Thickness Volume mm