HY3210B

HY3210P/B N-Channel Enhancement Mode MOSFET Feature  Pin Description 100V/120A RDS(ON)=6.8mΩ(typ.) @VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green Devices Available (RoHS Compliant) TO-220FB-3L TO-263-2L Applications  Power Switching application  Uninterruptible Power Supply N-Channel MOSFET Ordering and Marking Information Package Code P B HY3210 HY3210 YYXXXJWWG YYXXXJWWG P :TO-220FB-3L B:TO-263-2L Date Code YYXXX WW Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr -oduct and/or to this document at any time without notice. www.hymexa.com 1 V1.0 HY3210P/B Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (Tc=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±25 V Maximum Junction Temperature 175 °C TJ TSTG IS Storage Temperature Range °C -55 to 175 Source Current-Continuous(Body Diode) Tc=25°C 120 A Tc=25°C 480** A Tc=25°C 120 A Tc=100°C 84 A Tc=25°C 237 W Tc=100°C 119 W Mounted on Large Heat Sink Note: IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RJC Thermal Resistance, Junction-to-Case 0.63 °C/W RJA Thermal Resistance, Junction-to-Ambient ** 62.5 °C/W EAS Single Pulsed-Avalanche Energy *** 756*** mJ * ** *** L=0.5mH Repetitive rating；pulse width limited by max. junction temperature. Surface mounted on FR-4 board. Limited by TJmax , starting TJ=25°C, L = 0.5mH, VDS=80V, VGS =10V. Electrical Characteristics(Tc =25°C Unless Otherwise Noted) Symbol Parameter Test Conditions HY3210 Unit Min Typ. Max VGS=0V,IDS=250μA 100 - - V VDS=100V,VGS=0V - - 1 μA - - 10 μA Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current VGS(th) IGSS RDS(ON)* TJ=125°C Gate Threshold Voltage VDS=VGS, IDS=250μA 2.0 3.0 4.0 V Gate-Source Leakage Current VGS=±25V,VDS=0V - - ±100 nA Drain-Source On-State Resistance VGS=10V,IDS=60A - 6.8 8.5 mΩ ISD=60A,VGS=0V - 0.8 1 V - 46 - ns - 98 - nC Diode Characteristics VSD* Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge www.hymexa.com ISD=60A,dISD/dt=100A/μs 2 V1.0 HY3210P/B Electrical Characteristics (Cont.) (Tc =25°C Unless Otherwise Noted) Symbol Parameter Test Conditions HY3210 Min Typ. Max Unit Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1 MHz - 1.7 - Ciss Input Capacitance VGS=0V, - 4922 - Coss Output Capacitance VDS=25V, - 902 - Crss Reverse Transfer Capacitance Frequency=1.0MHz - 508 - td(ON) Turn-on Delay Time - 23 - Tr Turn-on Rise Time VDD=50V,RG=6Ω, - 35 - td(OFF) Turn-off Delay Time IDS=60A,VGS=10V - 77 - - 44 - - 120 - - 17 - - 28 - Tf Turn-off Fall Time Gate Charge Ω pF ns Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=80V, VGS=10V， ID=60A nC Note: *Pulse test，pulse width ≤ 300us，duty cycle ≤ 2% www.hymexa.com 3 V1.0 HY3210P/B Typical Operating Characteristics Drain Current Power Dissipation 280 135 120 ID - Drain Current (A) Ptot - Power (W) 240 200 160 120 80 40 limited by package 105 90 75 60 45 30 15 o 0 TC=25 C 0 20 40 o 60 0 80 100 120 140 160 180 200 TC=25 C,VG=10V 0 20 40 60 80 100 120 140 160 180 200 Tc - Case Temperature (°C) Tc - Case Temperature (°C) Safe Operation Area ID - Drain Current (A) 600 100us Rd s(o n) Lim it 100 1ms 10ms 10 DC 1 o TC=25 C 0.1 0.01 0.1 1 10 100 500 VDS - Drain - Source Voltage (V) Thermal Transient Impedance 1 Normalized Effective Transient Duty = 0.5 0.2 0.1 0.1 0.05 0.01 0.02 0.01 0.001 Single Mounted on minimum pad o RθJA : 62.5 C/W 0.0001 0.0001 0.001 0.1 0.01 1 10 S uare Wave Pulse Duration sec www.hymexa.com 4 V1.0 HY3210P/B Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 160 9.5 140 ID - Drain Current (A) 120 RDS(ON) - On - Resistance (mΩ) VGS= 6,7,8,9,10V 5.5V 100 5V 80 60 4.5V 40 20 0 8.5 VGS =10V 7.5 6.5 5.5 4.5 0 1 2 3 4 5 0 6 VDS - Drain-Source Voltage (V) 60 90 120 150 ID - Drain Current (A) Drain-Source On Resistance Source-Drain Diode Forward 160 2.4 2.2 30 VGS = 10V 100 IDS = 60A 1.8 IS - Source Current (A) Normalized On Resistance 2.0 1.6 1.4 1.2 1.0 0.8 o 10 Tj=175 C o Tj=25 C 1 0.6 0.4 o 0.2 -50 -25 RON@Tj=25 C: 6.8mΩ 0 25 50 0.1 0.0 75 100 125 150 175 Tj - Junction Temperature (°C) www.hymexa.com 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD - Source-Drain Voltage (V) 5 V1.0 HY3210P/B Typical Operating Characteristics (Cont.) Capacitance Gate Charge 10 11000 Frequency=1MHz 10000 VGS - Gate-source Voltage (V) C - Capacitance (pF) 9000 8000 7000 6000 Ciss 5000 4000 3000 2000 Coss 1000 0 VDS= 80V 9 5 10 15 20 25 30 35 7 6 5 4 3 2 0 40 0 15 30 45 60 75 90 105 120 QG - Gate Charge (nC) VDS - Drain - Source Voltage (V) www.hymexa.com 8 1 Crss 0 IDS= 60A 6 V1.0 HY3210P/B Avalanche Test Circuit Switching Time Test Circuit Gate Charge Test Circuit www.hymexa.com 7 V1.0 HY3210P/B Device Per Unit Package Type Unit Quantity TO-220FB-3L TO-263-2L Tube Tube 50 50 Package Information TO-220FB-3L COMMON DIMENSIONS SYMBOL www.hymexa.com mm MIN NOM MAX A 4.37 4.57 4.77 A1 1.25 1.30 1.45 A2 2.20 2.40 2.60 b 0.70 0.80 0.95 b2 1.17 1.27 1.47 c 0.40 0.50 0.65 D 15.10 15.60 16.10 D1 8.80 9.10 9.40 D2 5.50 - - E 9.70 10.00 10.30 E3 7.00 - - e 2.54 BSC e1 5.08 BSC H1 6.25 6.50 6.85 L 12.75 13.50 13.80 L1 - 3.10 3.40 ΦP 3.40 3.60 3.80 Q 2.60 2.80 3.00 8 V1.0 HY3210P/B Package Information TO-263-2L COMMON DIMENSIONS SYMBOL mm MIN NOM MAX A 4.37 4.57 4.77 A1 1.22 1.27 1.42 A2 2.49 2.69 2.89 A3 0 0.13 0.25 b 0.7 0.81 0.96 b1 1.17 1.27 1.47 c 0.3 0.38 0.53 D1 8.5 8.7 8.9 D4 6.6 - - E 9.86 10.16 10.36 E5 7.06 - - e 2.54 BSC H 14.7 15.1 15.5 H2 1.07 1.27 1.47 L 2 2.3 2.6 L1 1.4 1.55 1.7 L4 θ www.hymexa.com 0.25 BSC 0° 5° 9 9° V1.0 HY3210P/B Classification Profile Classification Reflow Profiles Profile Feature Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmaxto TP) Liquidous temperature (TL) Time at liquidous (tL) Peak package body Temperature (Tp)* Time (tP)** within 5°C of the specified classification temperature (Tc) Average ramp-down rate (Tpto Tsmax) Time 25°C to peak temperature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 °C 150 °C 150 °C 200 °C 60-120 seconds 60-120 seconds 3 °C/second max. 3°C/second max. 183 °C 217 °C 60-150 seconds 60-150 seconds See Classification Temp in table 1 SeeClassification Tempin table 2 20** seconds 30** seconds 6 °C/second max. 6 °C/second max. 6 minutes max. 8 minutes max. *Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. www.hymexa.com 10 V1.0 HY3210P/B Table 1.SnPb Eutectic Process – Classification Temperatures (Tc) Package Volume mm³ Volume mm³ Thickness