HYG025N04LQ1D

HYG025N04LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature  Pin Description 40V/150A RDS(ON)= 2.4mΩ(typ.)@VGS = 10V RDS(ON)= 4.2mΩ(typ.)@VGS = 4.5V G D  100% Avalanche Tested  Reliable and Rugged  Halogen Free and Green Devices Available S G D G D TO-252-2L (RoHS Compliant) S TO-251-3L TO-251-3S Applications  Switching Application   Power Management for DC/DC Battery Protection N-Channel MOSFET Ordering and Marking Information Package Code D G025N04 U G025N04 XYMXXXXXX XYMXXXXXX V G025N04 D: TO-252-2L U: TO-251-3L V:TO-251-3S Date Code XYMXXXXXX XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr -oduct and/or to this document at any time without notice. www.hymexa.com V1.1 1 S HYG025N04LQ1D/U/V Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (Tc=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 40 V VGSS Gate-Source Voltage ±20 V TJ Junction Temperature Range -55 to 175 °C TSTG Storage Temperature Range -55 to 175 °C Tc=25°C 150 A Tc=25°C 540 A Tc=25°C 150 A Tc=100°C 106 A Tc=25°C 150 W Tc=100°C 75 W 1 °C/W 110 °C/W 478 mJ IS Source Current-Continuous(Body Diode) Mounted on Large Heat Sink Note: IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient ** EAS Single Pulsed-Avalanche Energy *** * ** *** L=0.3mH Repetitive rating；pulse width limited by max. junction temperature. Surface mounted on FR-4 board. Limited by TJmax , starting TJ=25°C, L = 0.3mH, RG= 25Ω, VGS =10V. Electrical Characteristics(Tc =25°C Unless Otherwise Noted) Symbol Parameter Test Conditions HYG025N04LQ1 Unit Min Typ. Max 40 - - V - - 1.0 μA - - 50 μA 3.0 V ±100 nA Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current VGS(th) IGSS RDS(ON)* VGS=0V,IDS=250μA VDS=40V,VGS=0V TJ=125°C Gate Threshold Voltage VDS=VGS, IDS=250μA 1.0 1.7 Gate-Source Leakage Current VGS=±20V,VDS=0V - - VGS=10V,IDS=40A - 2.4 3.2 VGS=4.5V,IDS=40A - 4.2 5.3 ISD=40A,VGS=0V - 0.80 1.2 V - 35 - ns - 31 - nC Drain-Source On-State Resistance mΩ Diode Characteristics VSD* Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=40A,dISD/dt=100A/μs www.hymexa.com V1.1 2 HYG025N04LQ1D/U/V Electrical Characteristics (Cont.) (Tc =25°C Unless Otherwise Noted) Symbol Parameter Test Conditions HYG025N04LQ1 Min Typ. Max - 0.72 - - 7080 - Unit Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance VGS=0V,VDS=0V,F=1 MHz VGS=0V, Coss Output Capacitance VDS=25V, - 525 - Crss Reverse Transfer Capacitance Frequency=1.0MHz - 334 - td(ON) Turn-on Delay Time - 13 - Tr Turn-on Rise Time VDD=32V,RG=4Ω, - 21 - td(OFF) Turn-off Delay Time IDS=40A,VGS=10V - 44 - - 25 - - 151 - - 15.3 - - 37.1 - Tf Turn-off Fall Time Gate Charge Ω pF ns Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS =32V, VGS=10V， ID=40A nC Note: *Pulse test，pulse width ≤ 300us，duty cycle ≤ 2% www.hymexa.com V1.1 3 HYG025N04LQ1D/U/V Typical Operating Characteristics Figure 2: Drain Current ID-Drain Current(A) Power Dissipation (w) Figure 1: Power Dissipation Tc-Case Temperature(℃) Thermal Zjc ID-Drain Current(A) Impedance (℃/W) Figure 4: Thermal Transient Impedance Normalized Transient Figure 3: Safe Operation Area Tc-Case Temperature(℃) Maximum Effective Transient Thermal Impedance, Junction-to-Case VDS-Drain-Source Voltage(V) Figure 6: Drain-Source On Resistance ID-Drain Current(A) RDS(ON)-ON-Resistance(Ω) Figure 5: Output Characteristics VDS-Drain-Source Voltage (V) ID-Drain Current(A) www.hymexa.com V1.1 4 HYG025N04LQ1D/U/V Typical Operating Characteristics(Cont.) Figure 8: Source-Drain Diode Forward IS-Source Current (A) Normalized On-Resistance(A) Figure 7: On-Resistance vs. Temperature Tj-Junction Temperature (℃) Figure 10: Gate Charge Characteristics C-Capacitance(pF) VGS-Gate-Source Voltage (V) Figure 9: Capacitance Characteristics VSD-Source-Drain Voltage(V) VDS-Drain-Source Voltage (V) QG-Gate Charge (nC) www.hymexa.com V1.1 5 HYG025N04LQ1D/U/V Avalanche Test Circuit Switching Time Test Circuit Gate Charge Test Circuit www.hymexa.com V1.1 6 HYG025N04LQ1D/U/V Device Per Unit Package Type Unit Quantity TO-252-2L TO-252-2L TO-251-3L TO-251-3S Tube 75 Reel Tube Tube 2500 75 75 Package Information TO-252-2L COMMON DIMENSIONS SYMBOL mm MIN NOM MAX A 2.20 2.30 2.40 A1 0.00 - 0.20 A2 0.97 1.07 1.17 b 0.68 0.78 0.90 b3 5.20 5.33 5.50 c 0.43 0.53 0.63 D 5.98 6.10 6.22 D1 5.30REF E 6.40 6.60 6.80 E1 4.63 - - e www.hymexa.com 2.286BSC H 9.40 10.10 10.50 L 1.38 1.50 1.75 L1 2.90REF L2 0.51BSC L3 0.88 - 1.28 L4 - - 1.00 L5 1.65 1.80 1.95 θ 0° - 8° V1.1 7 HYG025N04LQ1D/U/V TO-251-3L COMMON DIMENSIONS SYMBOL mm MIN NOM MAX A 2.20 2.30 2.40 A2 0.97 1.07 1.17 b 0.68 0.78 0.90 b2 0.00 0.04 0.10 b2' 0.00 0.04 0.10 b3 5.20 5.33 5.50 c 0.43 0.53 0.63 D 5.98 6.10 6.22 D1 5.30REF E 6.40 6.60 6.80 E1 4.63 - - e 2.286BSC H 16.22 16.52 16.82 L1 9.15 9.40 9.65 L3 0.88 1.02 1.28 L5 1.65 1.80 1.95 www.hymexa.com V1.1 8 HYG025N04LQ1D/U/V TO-251-3S COMMON DIMENSIONS SYMBOL mm MIN NOM MAX A 2.20 2.30 2.40 A2 0.97 1.07 1.17 b 0.68 0.78 0.90 b3 5.20 5.33 5.50 c 0.43 0.53 0.63 D 5.98 6.10 6.22 D1 5.30REF E 6.40 6.60 6.80 E1 4.63 - - e 2.286BSC H 10.00 11.22 11.44 L1 3.90 4.10 4.30 L3 0.88 1.02 1.28 L5 1.65 1.80 1.95 www.hymexa.com V1.1 9 HYG025N04LQ1D/U/V Classification Profile Classification Reflow Profiles Profile Feature Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmax to TP) Liquidous temperature (TL) Time at liquidous (tL) Peak package body Temperature (Tp)* Time (tP)** within 5°C of the specified classification temperature (Tc) Average ramp-down rate (Tp to Tsmax) Time 25°C to peak temperature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 °C 150 °C 150 °C 200 °C 60-120 seconds 60-120 seconds 3 °C/second max. 3°C/second max. 183 °C 217 °C 60-150 seconds 60-150 seconds See Classification Temp in table 1 See Classification Temp in table 2 20** seconds 30** seconds 6 °C/second max. 6 °C/second max. 6 minutes max. 8 minutes max. *Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. www.hymexa.com V1.1 10 HYG025N04LQ1D/U/V Table 1.SnPb Eutectic Process – Classification Temperatures (Tc) Package Volume mm³ Volume mm³ Thickness