HY3210P

HY3210P/M/B/PS/PM N-Channel Enhancement Mode MOSFET Pin Description Features • 100V/120A RDS(ON) = 6.8 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available G G D D S G D S S TO-220FB-3M TO-220FB-3L TO-263-2L (RoHS Compliant) G Applications G D Switching application • Power Management for Inverter Systems. S S TO-3PS-3L • D TO-3PS-3M D N-Channel MOSFET G S Ordering and Marking Information P HY3210 ÿ YYXXXJWW G ÿ YYXXXJWW G PS HY3210 PM HY3210 ÿ YYXXXJWW G Note: Package Code M HY3210 B HY3210 P : TO-220FB-3L B: TO-263-2L PM: TO-3PS-3M ÿ YYXXXJWW G Date Code YYXXX WW ÿ YYXXXJWW G M : TO-220FB-3M PS: TO-3PS-3L Assembly Material G : Lead Free Device HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. HOOYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 1 www.hooyi.cc 141225 HY3210P/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 100 VGSS Gate-Source Voltage ±25 Maximum Junction Temperature 175 °C -55 to 175 °C TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V TC=25°C 120 A TC=25°C 480** A TC=25°C 120 TC=100°C 84 TC=25°C 237 TC=100°C 119 Mounted on Large Heat Sink IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case 0.63 RθJA Thermal Resistance-Junction to Ambient 62.5 A W °C/W Avalanche Ratings EAS Avalanche Energy, Single Pulsed L=0.5mH 756*** mJ Note： * Repetitive rating ; pulse width limiited by junction temperature ** Drain current is limited by junction temperature *** VD=80V Electrical Characteristics Symbol Parameter (TC = 25°C Unless Otherwise Noted) Test Conditions HY3210 Min. Typ. Max. VGS=0V, IDS=250µA 100 - - VDS=100V, VGS=0V - - 1 - - 10 Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON)* TJ=85°C V µA Gate Threshold Voltage VDS=VGS, IDS=250µA 2.0 3.0 4.0 V Gate Leakage Current VGS=±25V, VDS=0V - - ±100 nA Drain-Source On-state Resistance VGS=10V, IDS=60A - 6.8 8.5 mΩ ISD=60A, VGS=0V - 0.8 1 V - 46 - ns - 98 - nC Diode Characteristics VSD * Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=60A, dlSD/dt=100A/µs 2 www.hooyi.cc HY3210P/M/B/PS/PM Electrical Characteristics (Cont.) Symbol Parameter (TC = 25°C Unless Otherwise Noted) Test Conditions HY3210 Min. Typ. Max. - 1.7 - - 4922 - - 902 - - 508 - - 23 - - 35 - - 77 - - 44 - - 120 - - 17 - - 28 - Unit Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time Tf VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=25V, Frequency=1.0MHz VDD=50V, RG= 6 Ω, IDS =60A, VGS=10V, Turn-off Fall Time Ω pF ns Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=80V, VGS=10V, IDS=60A Note * : Pulse test ; pulse width ≤300µs, duty cycle≤2%. . 3 www.hooyi.cc nC HY3210P/M/B/PS/PM Typical Operating Characteristics Drain Current Power Dissipation 280 135 120 ID - Drain Current (A) Ptot - Power (W) 240 200 160 120 80 40 limited by package 105 90 75 60 45 30 15 o 0 TC=25 C 0 20 40 o 60 0 80 100 120 140 160 180 200 TC=25 C,VG=10V 0 20 40 60 80 100 120 140 160 180 200 Tc - Case Temperature (°C) Tc - Case Temperature (°C) Safe Operation Area ID - Drain Current (A) 600 100us Rd s(o n) Lim it 100 1ms 10ms 10 DC 1 o TC=25 C 0.1 0.01 0.1 1 10 100 500 VDS - Drain - Source Voltage (V) Thermal Transient Impedance 1 Normalized Effective Transient Duty = 0.5 0.2 0.1 0.1 0.05 0.01 0.02 0.01 0.001 Single Mounted on minimum pad o RθJA : 62.5 C/W 0.0001 0.0001 0.001 0.1 0.01 1 10 S uare Wave Pulse Duration sec 4 www.hooyi.cc HY3210P/M/B/PS/PM Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 160 9.5 140 ID - Drain Current (A) 120 RDS(ON) - On - Resistance (mΩ) VGS= 6,7,8,9,10V 5.5V 100 5V 80 60 4.5V 40 20 0 8.5 VGS =10V 7.5 6.5 5.5 4.5 0 1 2 3 4 5 0 6 30 60 ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage 1.6 Normalized Threshold Vlotage RDS(ON) - On - Resistance (mΩ) 14 12 10 8 6 5 6 7 8 9 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 10 0 25 50 75 100 125 150 175 Tj - Junction Temperature (°C) VGS - Gate - Source Voltage (V) 5 150 IDS =250µA IDS=60A 4 120 VDS - Drain-Source Voltage (V) 16 4 90 www.hooyi.cc HY3210P/M/B/PS/PM Typical Operating Characteristics (Cont.) Source-Drain Diode Forward Drain-Source On Resistance 160 2.4 VGS = 10V 2.2 100 IDS = 60A 1.8 IS - Source Current (A) Normalized On Resistance 2.0 1.6 1.4 1.2 1.0 0.8 o Tj=175 C 10 o Tj=25 C 1 0.6 0.4 o 0.2 -50 -25 RON@Tj=25 C: 6.8mΩ 0 25 50 0.1 0.0 75 100 125 150 175 0.6 0.8 1.0 1.2 VSD - Source-Drain Voltage (V) Capacitance Gate Charge 1.4 10 Frequency=1MHz 10000 VDS= 80V 9 VGS - Gate-source Voltage (V) 9000 C - Capacitance (pF) 0.4 Tj - Junction Temperature (°C) 11000 8000 7000 6000 Ciss 5000 4000 3000 2000 Coss 1000 0 0.2 5 8 7 6 5 4 3 2 1 Crss 0 IDS= 60A 10 15 20 25 30 35 0 40 VDS - Drain - Source Voltage (V) 0 15 30 45 60 75 90 105 120 QG - Gate Charge (nC) 6 www.hooyi.cc HY3210P/M/B/PS/PM Avalanche Test Circuit and Waveforms VDS L tp VDSX(SUS) DUT VDS IAS RG VDD VDD IL tp EAS 0.01Ω tAV Avalanche Test Circuit and Waveforms VDS RD V DS DUT RG 90% VGS VDD 10% VGS tp td(on) tr 7 td(off) tf www.hooyi.cc HY3210P/M/B/PS/PM Package Information TO-220FB-3L SYMBOL A A1 A2 b b2 c D D1 DEP E NOM MAX MIN NOM MAX 4.57 1.30 4.70 1.33 0.173 0.050 0.180 0.051 0.185 0.052 2.35 0.77 2.40 0.80 2.50 0.90 0.093 0.030 0.094 0.031 0.098 0.035 1.17 1.27 1.36 0.046 0.050 0.054 0.48 15.40 0.50 15.60 0.56 15.80 0.019 0.606 0.020 0.614 0.022 0.622 9.00 9.10 9.20 0.354 0.358 0.362 0.05 9.80 0.10 10.00 0.20 10.20 0.002 0.386 0.004 0.394 0.008 0.402 8.70 - 0.343 - E1 - E2 9.80 e e1 H1 L L1 L2 P P1 Q θ1 θ2 θ3 8 MIN 4.40 1.27 6.40 12.75 - 10.00 10.20 2.54 BSC 5.08 BSC 6.50 6.60 13.50 13.65 3.10 3.30 2.50 REF 0.386 0.394 0.402 0.100 BSC 0.252 0.200 BSC 0.256 0.260 0.502 0.531 - 0.537 0.122 0.130 0.098 REF 3.50 3.60 3.63 0.138 0.142 0.143 3.50 2.73 3.60 2.80 3.63 2.87 0.138 0.107 0.142 0.110 0.143 0.113 5° 7° 9° 5° 7° 9° 1° 1° 3° 3° 5° 5° 1° 1° 3° 3° 5° 5° www.hooyi.cc HY3210P/M/B/PS/PM TO-220FB-3M SYMBOL A A1 A2 b b2 c D D1 DEP E NOM MAX MIN NOM MAX 4.57 1.30 4.70 1.33 0.173 0.050 0.180 0.051 0.185 0.052 2.35 0.77 2.40 0.80 2.50 0.90 0.093 0.030 0.094 0.031 0.098 0.035 1.17 1.27 1.36 0.046 0.050 0.054 0.48 15.40 0.50 15.60 0.56 15.80 0.019 0.606 0.020 0.614 0.022 0.622 9.00 9.10 9.20 0.354 0.358 0.362 0.05 9.80 0.10 10.00 0.20 10.20 0.002 0.386 0.004 0.394 0.008 0.402 8.70 - 0.343 - E1 - E2 9.80 e e1 H1 L L1 L2 P P1 Q θ1 θ2 9 MIN 4.40 1.27 6.40 7.25 - 10.00 10.20 2.54 BSC 5.08 BSC 6.50 6.60 7.40 7.55 3.10 3.30 2.50 REF 0.386 0.252 0.285 - 0.394 0.402 0.100 BSC 0.200 BSC 0.256 0.260 0.291 0.297 0.122 0.130 0.098 REF 3.50 3.60 3.63 0.138 0.142 0.143 3.50 2.73 3.60 2.80 3.63 2.87 0.138 0.107 0.142 0.110 0.143 0.113 5° 7° 9° 5° 7° 9° 1° 3° 5° 1° 3° 5° www.hooyi.cc HY3210P/M/B/PS/PM TO-263-2L SYMBOL MM MIN NOM MAX MIN NOM MAX A 4.40 4.57 4.70 0.173 0.180 0.185 A1 1.22 1.27 1.32 0.048 0.050 0.052 A2 2.59 2.69 2.79 0.102 0.106 0.110 A3 0.00 0.10 0.20 0.000 0.004 0.008 b 0.77 0.813 0.90 0.030 0.032 0.035 b1 1.20 1.270 1.36 0.047 0.050 0.054 c 0.34 0.381 0.47 0.013 0.015 0.019 D1 8.60 8.70 8.80 0.339 0.343 0.346 E 10.00 10.16 10.26 0.394 0.400 0.404 E2 10.00 10.10 10.20 0.394 0.398 0.402 H 14.70 15.10 15.50 0.579 0.594 0.610 H2 1.17 1.27 1.40 0.046 0.050 0.055 L 2.00 2.30 2.60 0.079 0.091 0.102 L1 1.45 1.55 1.70 0.057 0.061 0.067 2.54 BSC e L2 0.100 BSC 2.50 REF L4 10 INCH 0.098 REF 0.25 BSC 0.010 BSC 0° 5° 8° 0° 5° 8° 1 5° 7° 9° 5° 7° 9° 2 1° 3° 5° 1° 3° 5° ΦP1 1.40 1.50 1.60 0.055 0.059 0.063 DEP 0.05 0.10 0.20 0.002 0.004 0.008 www.hooyi.cc HY3210P/M/B/PS/PM TO-3PS-3L SYMBOL A A1 A2 b b2 c D D1 D2 DEP E E1 E2 E3 e e1 L L1 P P1 P2 P3 Q Q1 Q2 U θ1 θ2 θ3 11 MIN NOM 3. 36 3. 56 3. 76 1. 27 1. 49 0. 77 1. 17 1. 30 1. 54 0. 80 1. 27 1. 37 1. 64 0. 90 1. 36 0. 48 1 5. 50 9. 10 0. 05 9. 88 7. 80 6. 90 9. 90 1 3. 25 - 1. 40 3. 93 1. 60 6. 80 4. 00 3° 5° 1° MAX 0. 50 1 5. 70 0. 56 1 5. 90 9. 20 0. 30 0. 10 1 0. 00 8. 00 7. 10 1 0. 00 2. 54 5. 08 1 3. 40 3 .0 0 6. 00 3. 20 3. 57 1. 50 4. 00 1. 70 7. 00 4. 20 5° 7° 3° 9. 30 RE F 0. 20 1 0. 20 8. 20 7. 30 1 0. 10 BS C BS C 1 3. 55 3 .3 0 RE F RE F RE F 1. 60 4. 07 1. 80 7. 20 4. 40 7° 9° 5° www.hooyi.cc HY3210P/M/B/PS/PM TO-3PS-3M SYMBOL A A1 A2 b b2 c D D1 D2 DEP E E1 E2 E3 e e1 L L1 P P1 P2 P3 Q Q1 Q2 U θ1 θ2 θ3 12 MIN NOM 3. 36 3. 56 3. 76 1. 27 1. 49 0. 77 1. 17 1. 30 1. 54 0. 80 1. 27 1. 37 1. 64 0. 90 1. 36 0. 48 1 5. 50 9. 10 0. 05 9. 88 7. 80 6. 90 9. 90 7.25 - 1. 40 3. 93 1. 60 6. 80 4. 00 3° 5° 1° MAX 0. 50 1 5. 70 0. 56 1 5. 90 9. 20 0. 30 0. 10 1 0. 00 8. 00 7. 10 1 0. 00 2. 54 5. 08 7.40 3 .0 0 6. 00 3. 20 3. 57 1. 50 4. 00 1. 70 7. 00 4. 20 5° 7° 3° 9. 30 RE F 0. 20 1 0. 20 8. 20 7. 30 1 0. 10 BS C BS C 7.55 3 .3 0 RE F RE F RE F 1. 60 4. 07 1. 80 7. 20 4. 40 7° 9° 5° www.hooyi.cc HY3210P/M/B/PS/PM Devices Per Unit Package Type Unit Quantity TO-220FB-3L Tube 50 TO-220FB-3M Tube 50 TO-263-2L Tube 50 TO-3PS-3L Tube 50 TO-3PS-3M Tube 50 Classification Profile 13 www.hooyi.cc HY3210P/M/B/PS/PM Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 °C 150 °C 60-120 seconds 150 °C 200 °C 60-120 seconds 3 °C/second max. 3°C/second max. 183 °C 60-150 seconds 217 °C 60-150 seconds See Classification Temp in table 1 See Classification Temp in table 2 Time (tP)** within 5°C of the specified classification temperature (Tc) 20** seconds 30** seconds Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. 6 minutes max. 8 minutes max. Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmax to TP) Liquidous temperature (TL) Time at liquidous (tL) Peak (Tp)* package body Temperature Time 25°C to peak temperature * Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) 3 Package Volume mm Thickness