HYG080NH03LR1C1

HYG080NH03LR1C1 Dual N-Channel Enhancement Mode MOSFET Feature Pin Description G2 Q1 Q2 VDS 30V 30V ID (VGS = 10V) 31A 33A RDS(ON) (typ) @VGS = 10V 8.8 mR 7.3 mR RDS(ON) (typ) @VGS = 4.5V 12.4 mR 10.3 mR S2 S2 S2 S2 S2 S2 G2 S1 D2 D1 G1 D1 D1 D1 D1 D1 D1 G1 Pin1  100% Avalanche Tested  Reliable and Rugged  Halogen- Free Devices Available DFN3*3-8L Q1 Applications Q2  Synchronous Rectifiers  Wireless Power  H-bridge Motor Drive Dual N-Channel MOSFET Ordering and Marking Information Package Code C1 C1: DFN3*3-8L G080NH03 Date Code XYMXXXXXX XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr -oduct and/or to this document at any time without notice. www.hymexa.com V1.0 1 HYG080NH03LR1C1 Absolute Maximum Ratings Symbol Parameter MAX Q1 MAX Q2 Unit Common Ratings (Tc=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V Maximum Junction Temperature -55 to 175 °C Storage Temperature Range -55 to 175 °C TJ TSTG IS Source Current-Continuous(Body Diode) Tc=25°C 31 33 A Tc=25°C 111 118 A Tc=25°C 31 33 A Tc=100°C 22 23 A Mounted on Large Heat Sink IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RθJC Tc=25°C 21.4 W Tc=100°C 10.7 W Thermal Resistance, Junction-to-Case 7 °C/W RθJA Thermal Resistance, Junction-to-Ambient ** 75 °C/W EAS SinglePulsed-Avalanche Energy *** Note: L=0.1mH 22.9 34.3 mJ * Repetitive rating；pulse width limited by max.junction temperature. ** Surface mounted on 1in2 FR-4 board. *** Limited by TJmax , starting TJ=25°C, L = 0.1mH, RG= 25Ω, VGS =10V. www.hymexa.com V1.0 2 HYG080NH03LR1C1 Q1 Electrical Characteristics(Tc =25°C Unless Otherwise Noted) Symbol Parameter Test Conditions Q1 Unit Min Typ. Max 30 - - V - - 1 μA 50 μA 3 V Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current VGS(th) IGSS RDS(ON)* VGS=0V,IDS=250μA VDS=30V,VGS=0V Tj=125°C - Gate Threshold Voltage VDS=VGS, IDS=250μA 1 1.6 Gate-Source Leakage Current VGS=±20V,VDS=0V - - VGS=10V,IDS= 10 A - Drain-Source On-State Resistance ±100 nA 8.8 11 mΩ 12.4 15 mΩ - 0.7 1.0 V - 8.2 - ns - 3.1 - nC VGS=4.5V,IDS= 10A Diode Characteristics VSD* Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=1A,VGS=0V ISD=10A,dISD/dt=100A/μs Q1 Electrical Characteristics (Cont.) (Tc =25°C Unless Otherwise Noted) Symbol Parameter Test Conditions Q1 Min Typ. Max Unit Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz - 1.2 - Ciss Input Capacitance VGS=0V, - 709.1 - Coss Output Capacitance VDS=25V, - 87 - Crss Reverse Transfer Capacitance Frequency=1.0MHz - 70.7 - td(ON) Turn-on Delay Time - 5.8 - Tr Turn-on Rise Time VDD=10V,RG=2.7Ω, - 14.5 - td(OFF) Turn-off Delay Time IDS=4A,VGS=10V - 15.6 - - 3.4 - Tf Turn-off Fall Time Gate Charge Ω pF ns Characteristics Qg Total Gate Charge （VGS=10V） Qg Total Gate Charge （VGS=4.5V） Qgs Gate-Source Charge Qgd Gate-Drain Charge 16 VDS =15V, ID=10A - 7.8 - - 2.9 - - 3.3 - nC Note: *Pulse test，pulse width ≤ 300us，duty cycle ≤ 2% www.hymexa.com V1.0 3 HYG080NH03LR1C1 Q1-Channel Typical Operating Characteristics Figure 2: Drain Current ID-Drain Current(A) Power Dissipation (w) Figure 1: Power Dissipation Tc-Case Temperature(℃) Tc-Case Temperature(℃) Thermal Zθjc ID-Drain Current(A) Impedance Figure 4: Thermal Transient Impedance Normalized Transient Figure 3: Safe Operation Area Maximum Effective Transient Thermal Impedance, Junction-to-Case VDS-Drain-Source Voltage(V) Figure 6: Drain-Source On Resistance ID-Drain Current(A) RDS(ON)-ON-Resistance(mΩ) Figure 5: Output Characteristics VDS-Drain-Source Voltage (V) ID-Drain Current(A) www.hymexa.com V1.0 4 HYG080NH03LR1C1 Q1-Channel Typical Operating Characteristics(Cont.) Figure 8: Source-Drain Diode Forward IS-Source Current (A) Normalized On-Resistance Figure 7: On-Resistance vs. Temperature Tj-Junction Temperature (℃) VSD-Source-Drain Voltage(V) Figure 10: Gate Charge Characteristics C-Capacitance(pF) VGS-Gate-Source Voltage (V) Figure 9: Capacitance Characteristics VDS-Drain-Source Voltage (V) QG-Gate Charge (nC) www.hymexa.com V1.0 5 HYG080NH03LR1C1 Q2 Electrical Characteristics(Tc =25°C Unless Otherwise Noted) Symbol Parameter Test Conditions Q2 Unit Min Typ. Max 30 - - V - - 1 μA 50 μA 3 V Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current VGS(th) IGSS RDS(ON)* VGS=0V,IDS=250μA VDS=30V,VGS=0V Tj=125°C - Gate Threshold Voltage VDS=VGS, IDS=250μA 1 1.7 Gate-Source Leakage Current VGS=±20V,VDS=0V - - VGS=10V,IDS=10A - Drain-Source On-State Resistance ±100 nA 7.3 9.5 mΩ 10.3 12.5 mΩ - 0.7 1.0 V - 10 - ns - 4.4 - nC VGS=4.5V,IDS=10A Diode Characteristics VSD* Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=1A,VGS=0V ISD=10A,dISD/dt=100A/μs Q2 Electrical Characteristics (Cont.) (Tc =25°C Unless Otherwise Noted) Symbol Parameter Test Conditions Q2 Min Typ. Max Unit Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz - 1.0 - Ciss Input Capacitance VGS=0V, - 966 - Coss Output Capacitance VDS=25V, - 117 - Crss Reverse Transfer Capacitance Frequency=1.0MHz - 101 - td(ON) Turn-on Delay Time - 6.8 - Tr Turn-on Rise Time VDD=10V,RG=2.7Ω, - 16.6 - td(OFF) Turn-off Delay Time IDS=4A,VGS=10V - 19.4 - - 5.4 - Tf Turn-off Fall Time Gate Charge Ω pF ns Characteristics Qg Total Gate Charge（VGS=10V） Qg Total Gate Charge （VGS=4.5V） Qgs Gate-Source Charge Qgd Gate-Drain Charge 23.2 VDS =15V,ID=10A - 11.8 - - 4.0 - - 5.0 - nC Note: *Pulse test，pulse width ≤ 300us，duty cycle ≤ 2% www.hymexa.com V1.0 6 HYG080NH03LR1C1 Q2-Channel Typical Operating Characteristics Figure 2: Drain Current ID-Drain Current(A) Power Dissipation (w) Figure 1: Power Dissipation Tc-Case Temperature(℃) Tc-Case Temperature(℃) Thermal Zθjc ID-Drain Current(A) Impedance Figure 4: Thermal Transient Impedance Normalized Transient Figure 3: Safe Operation Area Maximum Effective Transient Thermal Impedance, Junction-to-Case VDS-Drain-Source Voltage(V) Figure 6: Drain-Source On Resistance ID-Drain Current(A) RDS(ON)-ON-Resistance(mΩ) Figure 5: Output Characteristics VDS-Drain-Source Voltage (V) ID-Drain Current(A) www.hymexa.com V1.0 7 HYG080NH03LR1C1 Q2-Channel Typical Operating Characteristics(Cont.) Figure 8: Source-Drain Diode Forward IS-Source Current (A) Normalized On-Resistance Figure 7: On-Resistance vs. Temperature Tj-Junction Temperature (℃) VSD-Source-Drain Voltage(V) Figure 10: Gate Charge Characteristics C-Capacitance(pF) VGS-Gate-Source Voltage (V) Figure 9: Capacitance Characteristics VDS-Drain-Source Voltage (V) QG-Gate Charge (nC) www.hymexa.com V1.0 8 HYG080NH03LR1C1 Avalanche Test Circuit Switching Time Test Circuit Gate Charge Test Circuit www.hymexa.com V1.0 9 HYG080NH03LR1C1 Device Per Unit Package Type Unit Quantity DFN3*3-8L Reel 3000 Package Information DFN3*3-8L SYMBOL MILLIMETER MIN NOM MAX A 0.70 0.75 0.80 A1 0.00 0.02 0.05 b 0.35 0.40 0.45 b1 0.30REF c 0.18 0.20 0.25 D 2.90 3.00 3.10 D2 2.30 2.40 2.50 Nd 1.90 1.95 2.00 E 2.90 3.00 3.10 E1 0.89 0.99 1.09 E2 0.42 0.52 0.62 e 0.65BSC K 0.35REF K1 0.06REF K2 0.25REF L 0.27 L1 h www.hymexa.com 0.32 0.37 0.10REF 0.20 0.25 0.30 V1.0 10 HYG080NH03LR1C1 Classification Profile Classification Reflow Profiles Profile Feature Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmaxto TP) Liquidous temperature (TL) Time at liquidous (tL) Peak package body Temperature (Tp)* Time (tP)** within 5°C of the specified classification temperature (Tc) Average ramp-down rate (Tpto Tsmax) Time 25°C to peak temperature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 °C 150 °C 150 °C 200 °C 60-120 seconds 60-120 seconds 3 °C/second max. 3°C/second max. 183 °C 217 °C 60-150 seconds 60-150 seconds See Classification Temp in table 1 SeeClassification Tempin table 2 20** seconds 30** seconds 6 °C/second max. 6 °C/second max. 6 minutes max. 8 minutes max. *Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. www.hymexa.com V1.0 11 HYG080NH03LR1C1 Table 1.SnPb Eutectic Process – Classification Temperatures (Tc) Package Volume mm³ Volume mm³ Thickness