HY1607D

HY1607D/U/V N-Channel Enhancement Mode MOSFET Features • Pin Description 68V/70A RDS(ON) = 6.8 m(typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available G D S (RoHS Compliant) G TO-252-2L D S TO-251-3L Applications  Power Management for Inverter Systems. N-Channel MOSFET Ordering and Marking Information Package Code D HY1607 U HY1607 YYXXXJWW G YYXXXJWW G D : TO-252-2L U : TO-251-3L Date Code YYXXX WW Assembly Material G : Lead Free Device Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate Termination finish;which are fully compliant with RoHS. HUAYI lead -free products meet or exceed the leadFree requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr-oduct and/or to this document at any time without notice. www.hymexa.com 1 V1.1 HY1607D/U/V Absolute Maximum Ratings Parameter Symbol Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 68 VGSS Gate-Source Voltage ±25 Maximum Junction Temperature 175 °C -55 to 175 °C TC=25°C 70 A TC=25°C 280** A TC=25°C 70 TC=100°C 60 TC=25°C 75 TC=100°C 37.5 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case RJA Thermal Resistance-Junction to Ambient A W 2 °C/W 110 Avalanche Ratings EAS Avalanche Energy, Single Pulsed L=0.5mH mJ 280** Note： * Repetitive rating ; pulse width limiited by junction temperature ** Drain current is limited by junction temperature *** VD=55V Electrical Characteristics Symbol Parameter (TC = 25C Unless Otherwise Noted) Test Conditions HY1607 Min. Typ. Max. 68 - - - - 1 - - 10 Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON)* VGS=0V, IDS=250A VDS=68V, VGS=0V TJ=85°C V A Gate Threshold Voltage VDS=VGS, IDS=250A 2 3 4 V Gate Leakage Current VGS=±25V, VDS=0V - - ±100 nA Drain-Source On-state Resistance VGS=10V, IDS=35A - 6.8 8.5 m ISD=35A, VGS=0V - 0.8 1 V - 33 - ns - 60 - nC Diode Characteristics VSD * Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge www.hymexa.com ISD=35A, dlSD/dt=100A/s 2 V1.1 HY1607D/U/V Electrical Characteristics (Cont.) Symbol Parameter (TC = 25C Unless Otherwise Noted) Test Conditions HY1607 Min. Typ. Max. - 1.5 - - 3200 - - 351 - - 290 - - 14 - - 13 - - 20 - - 7 - - 84 - - 13 - - 27 - Unit Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time Tf VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=25V, Frequency=1.0MHz VDD=34V, RG= 5 , IDS=35A, VGS=10V, Turn-off Fall Time  pF ns Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=55V, VGS=10V, IDS=35A nC Note * : Pulse test ; pulse width 300s, duty cycle2%. www.hymexa.com 3 V1.1 HY1607D/U/V Typical Operating Characteristics Power Dissipation Drain Current 175 ID - Drain Current (A) 90 Ptot - Power (W) 150 125 100 75 80 70 60 50 40 30 50 20 25 10 o 0 TC=25 C 0 o 20 40 60 0 80 100 120 140 160 180 200 TC=25 C,VG=10V 0 20 40 60 80 100 120 140 160 180 200 Tc - Case Temperature (°C) Tc - Case Temperature (°C) Safe Operation Area 100 Rd s(o n) Lim it ID - Drain Current (A) 600 100us 10 1ms 10ms DC 1 o TC=25 C 0.1 0.01 0.1 1 10 100 500 VDS - Drain - Source Voltage (V) Thermal Transient Impedance Normalized Effective Transient 10 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Mounted on minimum pad o RJA : 110 C/W 0.01 0.001 0.0001 Single 0.001 0.1 0.01 1 10 Square Wave Pulse Duration (sec) www.hymexa.com 4 V1.1 HY1607D/U/V Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 8.0 160 VGS= 6,7,8,9,10V 5.5V 120 ID - Drain Current (A) RDS(ON) - On - Resistance (m) 140 100 80 60 5V 40 20 4.5V 7.5 VGS =10V 7.0 6.5 6.0 5.5 0 0 1.0 2.0 3.0 4.0 5.0 0 6.0 20 40 ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage 1.6 Normalized Threshold Vlotage RDS(ON) - On - Resistance (m) 15 13 11 9 7 5 6 7 8 9 VGS - Gate - Source Voltage (V) www.hymexa.com 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 10 100 IDS =250A IDS=35A 4 80 VDS - Drain-Source Voltage (V) 17 5 60 0 25 50 75 100 125 150 175 Tj - Junction Temperature (°C) 5 V1.1 HY1607D/U/V Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 170 2.4 VGS = 10V 2.2 100 IDS = 35A 1.8 IS - Source Current (A) Normalized On Resistance 2.0 1.6 1.4 1.2 1.0 0.8 o Tj=175 C 10 o Tj=25 C 1 0.6 0.4 o 0.2 -50 -25 RON@Tj=25 C: 6.8m  0 25 50 0.1 0.0 75 100 125 150 175 0.6 0.8 1.0 1.2 VSD - Source-Drain Voltage (V) Capacitance Gate Charge 1.4 10 Frequency=1MHz 5000 VDS= 55V 9 4000 VGS - Gate-source Voltage (V) 4500 C - Capacitance (pF) 0.4 Tj - Junction Temperature (°C) 5500 Ciss 3500 3000 2500 2000 1500 1000 Coss IDS= 35A 8 7 6 5 4 3 2 1 500 0 0.2 0 Crss 5 10 15 20 25 30 35 0 40 VDS - Drain - Source Voltage (V) 0 13 26 39 52 65 78 91 104 QG - Gate Charge (nC) 6 V1.1 HY1607D/U/V Avalanche Test Circuit Switching Time Test Circuit Gate Charge Test Circuit www.hymexa.com 7 V1.1 HY1607D/U/V Device Per Unit Package Type Unit Quantity TO-252-2L TO-252-2L TO-251-3L Tube 75 Reel Tube 2500 75 Package Information TO-252-2L COMMON DIMENSIONS SYMBOL mm MIN NOM MAX A 2.20 2.30 2.40 A1 0.00 - 0.20 A2 0.97 1.07 1.17 b 0.68 0.78 0.90 b3 5.20 5.33 5.50 c 0.43 0.53 0.63 D 5.98 6.10 6.22 D1 5.30REF E 6.40 6.60 6.80 E1 4.63 - - e www.hymexa.com 8 2.286BSC H 9.40 10.10 10.50 L 1.38 1.50 1.75 L1 2.90REF L2 0.51BSC L3 0.88 - 1.28 L4 - - 1.00 L5 1.65 1.80 1.95 θ 0° - 8° V1.1 HY1607D/U/V TO-251-3L COMMON DIMENSIONS mm SYMBOL MIN NOM MAX A 2.20 2.30 2.40 A2 0.97 1.07 1.17 b 0.68 0.78 0.90 b2 0.00 0.04 0.10 b2' 0.00 0.04 0.10 b3 5.20 5.33 5.50 c 0.43 0.53 0.63 D 5.98 6.10 6.22 D1 5.30REF E 6.40 6.60 6.80 E1 4.63 - - e www.hymexa.com 2.286BSC H 16.22 16.52 16.82 L1 9.15 9.40 9.65 L3 0.88 1.02 1.28 L5 1.65 1.80 1.95 9 V1.1 HY1607D/U/V Classification Profile Classification Reflow Profiles Profile Feature Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmax to TP) Liquidous temperature (TL) Time at liquidous (tL) Peak package body Temperature (Tp)* Time (tP)** within 5°C of the specified classification temperature (Tc) Average ramp-down rate (Tp to Tsmax) Time 25°C to peak temperature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 °C 150 °C 150 °C 200 °C 60-120 seconds 60-120 seconds 3 °C/second max. 3°C/second max. 183 °C 217 °C 60-150 seconds 60-150 seconds See Classification Temp in table 1 See Classification Temp in table 2 20** seconds 30** seconds 6 °C/second max. 6 °C/second max. 6 minutes max. 8 minutes max. *Tolerance for peak profile Temperature (T p) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. www.hymexa.com 10 V1.1 HY1607D/U/V Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) 3 Package Thickness