HYG032N03LR1C1

HYG032N03LR1C1 Single N-Channel Enhancement Mode MOSFET Feature  Pin Description D D D D D D D D 30V/55A RDS(ON)= 3.3mΩ(typ.) @VGS = 10V RDS(ON)= 4.3 mΩ(typ.) @VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Halogen Free and Green Devices Available S S S G G S S S Pin1 (RoHS Compliant) DFN3*3-8L Applications Power Management for DC/DC Switching Application Single N-Channel MOSFET Battery Protection Ordering and Marking Information Package Code C1 C1: DFN3*3-8L G032N03 Date Code XYMXXXXX XYMXXXXX Note:HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNationfinish;which are fully compliant with RoHS.HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr -oduct and/or to this document at any time without notice. www.hymexa.com V1.0 1 HYG032N03LR1C1 Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (Tc=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V TJ Junction Temperature Range -55 to 175 °C TSTG Storage Temperature Range -55 to 175 °C Tc=25°C 55 A Tc=25°C 220 A Tc=25°C 55 A Tc=100°C 38.8 A Tc=25°C 23 W Tc=100°C 11.5 W IS Source Current-Continuous(Body Diode) Mounted on Large Heat Sink Note: IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RJC Thermal Resistance, Junction-to-Case 6.5 °C/W RJA Thermal Resistance, Junction-to-Ambient ** 75 °C/W EAS SinglePulsed-Avalanche Energy *** 150 mJ L=0.3mH * Repetitive rating；pulse width limited by max.junction temperature. ** Surface mounted on 1in2 FR-4 board. *** Limited by TJmax , starting TJ=25°C, L = 0.1mH, RG= 25Ω, VGS =10V. Electrical Characteristics(Tc =25°C Unless Otherwise Noted) Symbol Parameter Test Conditions HYG032N03LR1 Max Unit Min Typ. 30 - - - 1 μA - - 50 μA 2.5 V ±100 nA Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current VGS(th) IGSS RDS(ON)* VGS=0V,IDS=250μA VDS=30V,VGS=0V TJ=125°C Gate Threshold Voltage VDS=VGS, IDS=250μA 1.2 1.8 Gate-Source Leakage Current VGS=±20V,VDS=0V - - Drain-Source On-State Resistance V VGS=10V,IDS=20A 3.3 4.5 mΩ VGS=4.5V,IDS=20A 4.3 5.5 mΩ - 0.8 1.2 V - 16 - ns - 9 - nC Diode Characteristics VSD* Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=20A,VGS=0V ISD=20A,dISD/dt=100A/μs www.hymexa.com V1.0 2 HYG032N03LR1C1 Electrical Characteristics (Cont.) (Tc =25°C Unless Otherwise Noted) Symbol Parameter Test Conditions HYG032N03LR1 Min Typ. Max - 2 - - 2872 - Unit Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance VGS=0V,VDS=0V, Frequency=1.0MHz VGS=0V, Coss Output Capacitance VDS=25V, - 332 - Crss Reverse Transfer Capacitance Frequency=1.0MHz - 277 - td(ON) Turn-on Delay Time - 11 - Tr Turn-on Rise Time VDD=15V,RG=4Ω, - 50 - td(OFF) Turn-off Delay Time IDS=20A,VGS=10V - 52 - - 57 - Tf Turn-off Fall Time Gate Charge Ω pF ns Characteristics Qg(10V) Total Gate Charge 61 Qg(4.5V) Total Gate Charge VDS =24V, VGS=10V, - 32 - Qgs Gate-Source Charge ID=20A - 10 - Qgd Gate-Drain Charge - 16 - nC Note: *Pulse test，pulse width ≤ 300us，duty cycle ≤ 2% www.hymexa.com V1.0 3 HYG032N03LR1C1 Typical Operating Characteristics ID-Drain Current(A) Voltage Figure 2: Drain Current Power Dissipation (w) Figure 1: Power Dissipation Tc-Case Temperature(℃) Tc-Case Temperature(℃) Impedance Thermal Normalized Transient Figure 4: Thermal Transient Impedance Zθ jc Voltage ID-Drain Current(A) Figure 3: Safe Operation Area Maximum Effective Transient Thermal Impedance, Junction-to-Case VDS-Drain-Source Voltage(V) VDS-Drain-Source Voltage (V) Voltage RDS(ON)-ON-Resistance(mΩ) Figure 6: Drain-Source On Resistance Voltage ID-Drain Current(A) Figure 5: Output Characteristics ID-Drain Current(A) www.hymexa.com V1.0 4 HYG032N03LR1C1 Typical Operating Characteristics(Cont.) Voltage IS-Source Current (A) Figure 8: Source-Drain Diode Forward Voltage Normalized On-Resistance Figure 7: On-Resistance vs. Temperature Tj-Junction Temperature (℃) VSD-Source-Drain Voltage(V) VDS-Drain-Source Voltage (V) Voltage VGS-Gate-Source Voltage (V) Figure 10: Gate Charge Characteristics Voltage C-Capacitance(pF) Figure 9: Capacitance Characteristics QG-Gate Charge (nC) www.hymexa.com V1.0 5 HYG032N03LR1C1 Avalanche Test Circuit Switching Time Test Circuit Gate Charge Test Circuit www.hymexa.com V1.0 6 HYG032N03LR1C1 Device Per Unit Package Type Unit Quantity DFN3*3-8L Reel 3000 Package Information DFN3*3-8L MILLIMETER SYMBOL MIN NOM MAX A 0.70 0.75 0.80 A1 0.00 0.02 0.05 b 0.25 0.30 0.35 b1 1.55 1.60 165.00 c 0.19 0.20 0.21 D 2.90 3.00 3.10 D2 2.30 2.40 2.50 Nd 1.90 1.95 2.00 E 2.90 3.00 3.10 E2 1.60 1.70 1.80 e www.hymexa.com 0.65bsc L 0.35 0.40 0.45 h 0.30 0.35 0.40 V1.0 7 HYG032N03LR1C1 Classification Profile Classification Reflow Profiles Profile Feature Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmaxto TP) Liquidous temperature (TL) Time at liquidous (tL) Peak package body Temperature (Tp)* Time (tP)** within 5°C of the specified classification temperature (Tc) Average ramp-down rate (Tpto Tsmax) Time 25°C to peak temperature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 °C 150 °C 150 °C 200 °C 60-120 seconds 60-120 seconds 3 °C/second max. 3°C/second max. 183 °C 217 °C 60-150 seconds 60-150 seconds See Classification Temp in table 1 SeeClassification Tempin table 2 20** seconds 30** seconds 6 °C/second max. 6 °C/second max. 6 minutes max. 8 minutes max. *Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. www.hymexa.com V1.0 8 HYG032N03LR1C1 Table 1.SnPb Eutectic Process – Classification Temperatures (Tc) Package Volume mm³ Volume mm³ Thickness