HY3403P

HY3403P

  • 厂商:

    HUAYI(华羿微)

  • 封装:

    TO-220-3

  • 描述:

    30V/140A RDS(ON)=2.2mΩ(典型值),@VGS = 10V RDS(ON)=2.7mΩ(典型值),@VGS = 4.5V 100%雪崩测试 出色的CdV/dt效应抑制 提供无铅器件

  • 数据手册
  • 价格&库存
HY3403P 数据手册
HY3403P/B N-Channel Enhancement Mode MOSFET Pin Description Feature Description z 30V/140A RDS(ON)=2.2mΩ(typ.)@VGS = 10V RDS(ON)=2.7mΩ(typ.) @VGS = 4.5V z 100% avalanche tested z Excellent CdV/dt effect decline z Lead- Free Device Available S GD GD S TO-220FB-3L TO-263-2L Applications z Switching Application z Power Management for DC/DC N-Channel MOSFET Ordering and Marking Information Package Code P B HY3403 HY3403 YYXXXJWW G P: TO-220FB-3L Date Code YYXXX WW YYXXXJWW G B: TO-263-2L Assembly Material G:lead Free Note: H8$
HY3403P 价格&库存

很抱歉,暂时无法提供与“HY3403P”相匹配的价格&库存,您可以联系我们找货

免费人工找货