HY3606P

HY3606P/B N-Channel Enhancement Mode MOSFET Features • Pin Description 60V/162A RDS(ON) = 3.5 m(typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available G G D D S S (RoHS Compliant) TO-220FB-3L TO-263-2L Applications  Switching application  Power Management for Inverter Systems. N-Channel MOSFET Ordering and Marking Information P HY3606 B HY3606 YYXXXJWW G YYXXXJWW G Package Code P : TO-220FB-3L Date Code YYXXX WW B: TO-263-2L Assembly Material G : Lead Free Device Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate Termination finish;which are fully compliant with RoHS. HUAYI lead -free products meet or exceed the leadFree requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr-oduct and/or to this document at any time without notice. www.hymexa.com 1 V1.0 HY3606P/B Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 60 VGSS Gate-Source Voltage ±25 Maximum Junction Temperature 175 °C -55 to 175 °C TC=25°C 162 A TC=25°C 583** A TC=25°C 162 TC=100°C 105 TC=25°C 214 TC=100°C 107 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case 0.7 RJA Thermal Resistance-Junction to Ambient 62.5 A W °C/W Avalanche Ratings EAS Avalanche Energy, Single Pulsed L=0.5mH mJ 1000*** Note： * Repetitive rating ; pulse width limiited by junction temperature ** Drain current is limited by junction temperature *** VD=48V Electrical Characteristics Symbol Parameter (TC = 25C Unless Otherwise Noted) Test Conditions HY3606 Min. Typ. Max. 60 - - - - 1 - - 10 Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON)* VGS=0V, IDS=250A VDS=60V, VGS=0V TJ=85°C V A Gate Threshold Voltage VDS=VGS, IDS=250A 2.0 3.0 4.0 V Gate Leakage Current VGS=±25V, VDS=0V - - ±100 nA Drain-Source On-state Resistance VGS=10V, IDS=81A - 3.5 4.5 m ISD=81 A, VGS=0V - 0.8 1.2 V - 30 - ns - 52 - nC Diode Characteristics VSD * Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge www.hymexa.com ISD=81A, dlSD/dt=100A/s 2 V1.0 HY3606P/B Electrical Characteristics (Cont.) Symbol Parameter (TC = 25C Unless Otherwise Noted) Test Conditions HY3606 Min. Typ. Max. - 0.7 - - 4376 - - 857 - - 334 - - 28 - - 18 - - 42 - - 54 - - 130 - - 24 - - 47 - Unit Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time Tf VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=25V, Frequency=1.0MHz VDD=30V, R G=6 , I DS =81A, V GS=10V, Turn-off Fall Time  pF ns Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=48V, VGS=10V, IDS=81A nC Note * : Pulse test ; pulse width 300s, duty cycle2%. www.hymexa.com 3 V1.0 HY3606P/B Typical Operating Characteristics Power Dissipation Drain Current 275 187 175 ID - Drain Current (A) Ptot - Power (W) 250 200 150 100 limited by package 150 125 100 75 50 50 25 o TC=25 C 0 0 o 0 20 40 60 80 100 120 140 160 180 200 TC=25 C,VG=10V 0 20 40 60 80 100 120 140 160 180 200 TC -Case Temperature (°C) TC -Case Temperature (°C) Safe Operation Area Lim it 100 Rd s(o n) ID - Drain Current (A) 1000 100us 10ms 1ms 10 DC 1 0.1 10 1 100 400 VDS - Drain - Source Voltage (V) Thermal Transient Impedance Normalized Effective Transient 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.01 0.02 0.01 0.001 Single Mounted on minimum pad o RJA : 62.5 C/W 0.0001 0.0001 0.001 0.1 0.01 1 10 Square Wave Pulse Duration (sec) www.hymexa.com 4 V1.0 HY3606P/B Typical Operating Characteristics (Cont.) Drain-Source On Resistance Output Characteristics 5.5 400 VGS= 5.5,6,7,8,9,10V RDS(ON) - On - Resistance (mΩ) 350 ID - Drain Current (A) 300 5V 250 200 150 100 4.5V 50 0 0.0 4V 1.0 2.0 3.0 4.0 5.0 5.0 4.5 VGS=10V 4.0 3.5 3.0 2.5 2.0 6.0 0 40 VDS - Drain - Source Voltage (V) 80 120 Gate-Source On Resistance Gate Threshold Voltage 1.6 IDS =250μA IDS=81A 12 1.4 Normalized Threshold Voltage RDS(ON) - On - Resistance (mΩ) 200 ID - Drain Current (A) 14 10 8 6 4 2 0 160 3 4 5 6 7 8 9 1.0 0.8 0.6 0.4 0.2 -50 -25 10 VGS - Gate - Source Voltage (V) www.hymexa.com 1.2 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 5 V1.0 HY3606P/B Typical Operating Characteristics (Cont.) Source-Drain Diode Forward Drain-Source On Resistance 2.0 100 IDS = 81A 1.8 1.6 o IS - Source Current (A) Normalized On Resistance 200 VGS = 10V 1.4 1.2 1.0 0.8 Tj=150 C 10 o Tj=25 C 1 0.6 o RON@Tj=25 C: 3.5mΩ 0.4 -50 -25 0 25 50 75 0.1 0.0 100 125 150 0.8 1.0 1.2 Capacitance Gate Charge VDS= 48V 9 VGS - Gate-source Voltage (V) 9000 7500 Ciss 6000 4500 3000 Coss 1500 16 24 32 8 7 6 5 4 3 2 0 40 VDS - Drain - Source Voltage (V) www.hymexa.com IDS= 81A 1 Crss 8 1.4 10 10500 C - Capacitance (pF) 0.6 VSD - Source - Drain Voltage (V) Frequency=1MHz 0 0.4 Tj - Junction Temperature (°C) 12000 0 0.2 0 30 60 90 120 150 QG - Gate Charge (nC) 6 V1.0 HY3606P/B Avalanche Test Circuit Switching Time Test Circuit Gate Charge Test Circuit www.hymexa.com 7 V1.0 HY3606P/B Device Per Unit Package Type Unit Quantity TO-220FB-3L Tube 50 Package Information TO-220FB-3L COMMON DIMENSIONS SYMBOL www.hymexa.com mm MIN NOM MAX A 4.37 4.57 4.77 A1 1.25 1.30 1.45 A2 2.20 2.40 2.60 b 0.70 0.80 0.95 b2 1.17 1.27 1.47 c 0.40 0.50 0.65 D 15.10 15.60 16.10 D1 8.80 9.10 9.40 D2 5.50 - - E 9.70 10.00 10.30 E3 7.00 - - e 2.54 BSC e1 5.08 BSC H1 6.25 6.50 6.85 L 12.75 13.50 13.80 L1 - 3.10 3.40 ΦP 3.40 3.60 3.80 Q 2.60 2.80 3.00 8 V1.0 HY3606P/B Device Per Unit Package Type Unit Quantity TO-263-2L Reel 50 Package Information TO-263-2L COMMON DIMENSIONS SYMBOL mm MIN NOM MAX A 4.37 4.57 4.77 A1 1.22 1.27 1.42 A2 2.49 2.69 2.89 A3 0 0.13 0.25 b 0.7 0.81 0.96 b1 1.17 1.27 1.47 c 0.3 0.38 0.53 D1 8.5 8.7 8.9 D4 6.6 - - E 9.86 10.16 10.36 E5 7.06 - - e 2.54 BSC H 14.7 15.1 15.5 H2 1.07 1.27 1.47 L 2 2.3 2.6 L1 1.4 1.55 1.7 L4 θ www.hymexa.com 0.25 BSC 0° 5° 9 9° V1.0 HY3606P/B Classification Profile Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 C 150 C 60-120 seconds 150 C 200 C 60-120 seconds 3 C/second max. 3C/second max. 183 C 60-150 seconds 217 C 60-150 seconds See Classification Temp in table 1 See Classification Temp in table 2 Time (tP)** within 5C of the specified classification temperature (Tc) 20** seconds 30** seconds Average ramp-down rate (Tp to Tsmax) 6 C/second max. 6 C/second max. 6 minutes max. 8 minutes max. Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmax to TP) Liquidous temperature (TL) Time at liquidous (tL) Peak (Tp)* package body Temperature Time 25C to peak temperature * Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. www.hymexa.com 10 V1.0 HY3606P/B Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) Package Thickness