HYG210P06LQ1C2

HYG210P06LQ1C2 Single P-Channel Enhancement Mode MOSFET Feature Pin Description  -60V/-40A  RDS(ON)= 20mΩ(typ.) @VGS = -10V D D D D D D D D RDS(ON)= 26mΩ(typ.) @VGS = -4.5V  100% Avalanche Tested  Reliable and Rugged  Halogen free and Green Devices Available S G S S S G S S (RoHS Compliant) Pin1 PPAK5*6-8L Applications  Switching Application  Power Management for DC/DC  Battery Protection Single P-Channel MOSFET Ordering and Marking Information Package Code C2 C2: PPAK5*6-8L G210P06 Date Code XYMXXXXXX XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr -oduct and/or to this document at any time without notice. www.hymexa.com V1.0 1 HYG210P06LQ1C2 Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (Tc=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage -60 V VGSS Gate-Source Voltage ±20 V TJ Junction Temperature Range -55 to 175 °C TSTG Storage Temperature Range -55 to 175 °C Tc=25°C -40 A Tc=25°C -140 A Tc=25°C -40 A Tc=100°C -28 A Tc=25°C 60 W Tc=100°C 30 W IS Source Current-Continuous(Body Diode) Mounted on Large Heat Sink Note: IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance, Junction-to-Case 2.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient ** 45 °C/W EAS SinglePulsed-Avalanche Energy *** 289*** mJ L=0.3mH * Repetitive rating；pulse width limited by max.junction temperature. ** Surface mounted on 1in2 FR-4 board. *** Limited by TJmax , starting TJ=25°C, L = 0.3mH, RG= 25Ω, VGS =-10V. Electrical Characteristics(Tc =25°C Unless Otherwise Noted) Symbol Parameter Test Conditions HYG210P06LQ1 Unit Min Typ. Max VGS=0V,IDS=-250uA -60 - - V VDS=-60V, VGS=0V - - -1 uA - - -50 -1.0 -1.7 -3.0 V ±100 nA Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current VGS(th) IGSS RDS(ON)* TJ=125°C Gate Threshold Voltage VDS=VGS, IDS=-250uA Gate-Source Leakage Current VGS=±20V,VDS=0V - - VGS=-10V,ID= -20A - 20 25 mΩ 26 35 mΩ - -0.9 -1.3 V - 28 - ns - 25 - nC Drain-Source On-state Resistance VGS=-4.5V,ID= -20A Diode Characteristics VSD* Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD= -20A,VGS=0V ISD= -20A,dI/dt=100A/us www.hymexa.com V1.0 2 HYG210P06LQ1C2 Electrical Characteristics (Cont.) (Tc =25°C Unless Otherwise Noted) Symbol Parameter Test Conditions HYG210P06LQ1 Min Typ. Max Unit Dynamic Characteristics Ciss Input Capacitance VGS=0V,VDS=0V, Frequency=1.0MHz VGS=0V, Coss Output Capacitance VDS=-25V, - 123 - Crss Reverse Transfer Capacitance Frequency=1.0MHz - 60 - td(ON) Turn-on Delay Time - 11 - Tr Turn-on Rise Time VDD= -25V,RG=3Ω, - 17 - td(OFF) Turn-off Delay Time IDS= -20A,VGS=-10V - 73 - - 31 - - 90 - - 6 - - 18 - RG Tf Gate Resistance Turn-off Fall Time Gate Charge - 6.4 - - 3679 - Ω pF ns Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = -48V, VGS= -10V， ID= -20A, nC Note: *Pulse test，pulse width ≤ 300us，duty cycle ≤ 2% www.hymexa.com V1.0 3 HYG210P06LQ1C2 Typical Operating Characteristics Figure 2: Drain Current -ID-Drain Current(A) Power Dissipation (w) Figure 1: Power Dissipation Tc-Case Temperature(℃) Thermal Zθjc -ID-Drain Current(A) Impedance Figure 4: Thermal Transient Impedance Normalized Transient Figure 3: Safe Operation Area Tc-Case Temperature(℃) Maximum Effective Transient Thermal Impedance, Junction-to-Case -VDS-Drain-Source Voltage(V) Figure 6: Drain-Source On Resistance -ID-Drain Current(A) RDS(ON)-ON-Resistance(mΩ) Figure 5: Output Characteristics -VDS-Drain-Source Voltage (V) - ID-Drain Current(A) www.hymexa.com V1.0 4 HYG210P06LQ1C2 Typical Operating Characteristics(Cont.) Figure 8: Source-Drain Diode Forward -IS-Source Current (A) Normalized On-Resistance Figure 7: On-Resistance vs. Temperature Tj-Junction Temperature (℃) Figure 10: Gate Charge Characteristics C-Capacitance(pF) -VGS-Gate-Source Voltage (V) Figure 9: Capacitance Characteristics -VSD-Source-Drain Voltage(V) -VDS-Drain-Source Voltage (V) QG-Gate Charge (nC) www.hymexa.com V1.0 5 HYG210P06LQ1C2 Avalanche Test Circuit Switching Time Test Circuit Gate Charge Test Circuit www.hymexa.com V1.0 6 HYG210P06LQ1C2 Device Per Unit Package Type Unit Quantity PPAK5*6-8L Reel 5000 Package Information PPAK5*6-8L www.hymexa.com V1.0 7 HYG210P06LQ1C2 Classification Profile www.hymexa.com V1.0 8 HYG210P06LQ1C2 Classification Reflow Profiles Profile Feature Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmaxto TP) Liquidous temperature (TL) Time at liquidous (tL) Peak package body Temperature (Tp)* Time (tP)** within 5°C of the specified classification temperature (Tc) Average ramp-down rate (Tpto Tsmax) Time 25°C to peak temperature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 °C 150 °C 150 °C 200 °C 60-120 seconds 60-120 seconds 3 °C/second max. 3°C/second max. 183 °C 217 °C 60-150 seconds 60-150 seconds See Classification Temp in table 1 SeeClassification Tempin table 2 20** seconds 30** seconds 6 °C/second max. 6 °C/second max. 6 minutes max. 8 minutes max. *Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 1.SnPb Eutectic Process – Classification Temperatures (Tc) www.hymexa.com V1.0 9 HYG210P06LQ1C2 Package Volume mm³ Volume mm³ Thickness