HY1603D

HY1603D/U/S N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/62A, RDS(ON)= 4.0mΩ (typ.) @ VGS=10V • • • • • 100% EAS Guaranteed Super Low Gate Charge Excellent CdV/dt effect decline G D S G Advanced high cell density Trench technology Halogen - Free Device Available G D S S TO-251-3L TO-252-2L D TO-251-3L Applications D • High Frequency Synchronous Buck Converters for Computer Processor Power N-Channel MOSFET G • High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use S Ordering and Marking Information Package Code D HY1603 U HY1603 S HY1603 ÿ ÿ ÿ YYXXXJWW G YYXXXJWW G YYXXXJWW G Note: D : TO-252-2L S : TO-251-3L U : TO-251-3L Date Code YYXXX WW Assembly Material G : Lead Free Device HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. HOOYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 1 www.hooyi.cc 141225 HY1603D/U/S Absolute Maximum Ratings Parameter Symbol Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 150 °C -55 to 150 °C 62 A TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current TC=25°C V Mounted on Large Heat Sink IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation TC=25°C 248** TC=25°C 62 TC=100°C 43 TC=25°C 36 Tc=100°C 14.3 A A W RθJC Thermal Resistance-Junction to Case 3.5 °C/W RθJA Thermal Resistance-Junction to Ambient 110 °C/W EAS Drain-Source Avalanche Energy 190*** L=0.5mH mJ Note： * Repetitive rating ; pulse width limiited by junction temperature ** Drain current is limited by junction temperature *** VD=24V Electrical Characteristics Symbol (TC = 25°C Unless Otherwise Noted) Parameter Test Conditions HY1603 Min. Typ. Max. 30 - - - - 1 - - 30 Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS VGS=0V, IDS=250µA VDS=20V, VGS=0V TJ=85°C V µA Gate Threshold Voltage VDS=VGS, IDS=250µA 1.5 1.9 2.5 V Gate Leakage Current VGS=±20V, VDS=0V - - ±100 nA VGS=10V, IDS=31A - 4.0 5.5 mΩ VGS=4.5V, I DS=31A - 6.0 8 mΩ ISD=31A, VGS=0V - 0.8 1.1 V - 21 - ns - 13 - nC RDS(ON) * Drain-Source On-state Resistance Diode Characteristics VSD* Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IDS=31A, dlSD/dt=100A/µs 2 www.hooyi.cc HY1603D/U/S Electrical Characteristics (Cont.) Symbol Parameter (TC = 25°C Unless Otherwise Noted) Test Conditions HY1603 Min. Typ. Max. - 2.4 - - 1623 - - 702 - - 264 - - 15 28 - 13 24 - 39 71 - 10 19 - 28 - - 4.9 - - 6.1 - Unit Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time Tf VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=15V, Frequency=1.0MHz VDD=15V, RL=3.3 Ω, IDS =31A, V GS =10 V, RG=6Ω Turn-off Fall Time Ω pF ns Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=24V, VGS=10 V, I DS =31A Note * : Pulse test ; pulse width ≤300µs, duty cycle≤2%. 3 www.hooyi.cc nC HY1603D/U/S Typical Operating Characteristics Power Dissipation Drain Current 60 ID - Drain Current (A) 72 Ptot - Power (W) 50 40 30 20 60 48 36 24 10 o o TC=25 C 0 0 20 40 60 12 80 100 120 140 160 180 200 TC=25 C,VG=10V 0 20 40 60 80 100 120 140 160 180 200 Tc - Case Temperature (°C) Tc - Case Temperature (°C) Safe Operation Area Rd s(o n) Lim it ID - Drain Current (A) 400 100 100us 1ms 10 10ms 1 DC O TC=25 C 0.1 0.01 0.1 1 10 100 400 VDS - Drain - Source Voltage (V) Thermal Transient Impedance 10 Normalized Effective Transient Duty = 0.5 0.2 1 0.1 0.05 0.1 0.02 0.01 0.01 Single Mounted on minimum pad o RθJA : 110 C/W 0.001 0.0001 0.001 0.1 0.01 1 10 Square Wave Pulse Duration (sec) 4 www.hooyi.cc HY1603D/U/S Typical Operating Characteristics (Cont.) 160 9 140 8 VGS= 4.5,5,6,7,8,9,10V 120 100 4V 80 60 3.5V 40 20 7 6 VGS=10V 5 4 3 2 3V 0 0.0 Drain-Source On Resistance 10 RDS(ON) - On - Resistance (mΩ) ID - Drain Current (A) Output Characteristics 1 0.5 1.0 1.5 2.0 2.5 3.0 0 10 20 30 VDS - Drain - Source Voltage (V) ID - Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage IDS =250µA Normalized Threshold Voltage IDS=31A RDS(ON) - On - Resistance (mΩ) 50 1.6 24 20 16 12 8 4 0 40 1.4 1.2 1.0 0.8 0.6 0.4 2 3 4 5 6 7 8 9 0.2 -50 -25 10 VGS - Gate - Source Voltage (V) 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 5 www.hooyi.cc HY1603D/U/S Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 2.0 200 VGS = 10V 100 IDS = 31A 1.6 IS - Source Current (A) Normalized On Resistance 1.8 1.4 1.2 1.0 0.8 o Tj=150 C 10 o Tj=25 C 1 0.6 0.4 o 0.2 -50 -25 RON@Tj=25 C: 4.0mΩ 0 25 50 75 0.1 0.0 100 125 150 0.6 0.8 1.0 1.2 VSD - Source - Drain Voltage (V) Capacitance Gate Charge 1.4 10 Frequency=1MHz VDS= 24V 9 VGS - Gate-source Voltage (V) 2100 C - Capacitance (pF) 0.4 Tj - Junction Temperature (°C) 2400 Ciss 1800 1500 1200 900 Coss 600 Crss 300 0 0.2 IDS= 31A 8 7 6 5 4 3 2 1 0 0 5 10 15 20 25 30 VDS - Drain - Source Voltage (V) 0 5 10 15 20 25 QG - Gate Charge (nC) 6 www.hooyi.cc 30 HY1603D/U/S Avalanche Test Circuit and Waveforms VDS L tp VDSX(SUS) DUT VDS IAS RG VDD VDD IL tp EAS 0.01Ω tAV Switching Time Test Circuit and Waveforms VDS RD VDS 90% DUT RG VGS VDD 10% VGS tp td(on) tr 7 td(off) tf www.hooyi.cc HY1603D/U/S Package Information TO-252-2L 8 www.hooyi.cc HY1603D/U/S TO-251-3L(IPAK) 9 www.hooyi.cc HY1603D/U/S TO-251-3L(SIPAK) 10 www.hooyi.cc HY1603D/U/S Devices Per Unit Package Type Unit Quantity TO-252-3L Tube 72 TO-251-3L Tube 72 Classification Profile 11 www.hooyi.cc HY1603D/U/S Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 °C 150 °C 60-120 seconds 150 °C 200 °C 60-120 seconds 3 °C/second max. 3°C/second max. 183 °C 60-150 seconds 217 °C 60-150 seconds See Classification Temp in table 1 See Classification Temp in table 2 Time (tP)** within 5°C of the specified classification temperature (Tc) 20** seconds 30** seconds Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. 6 minutes max. 8 minutes max. Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmax to TP) Liquidous temperature (TL) Time at liquidous (tL) Peak (Tp)* package body Temperature Time 25°C to peak temperature * Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) 3 Package Volume mm Thickness