HY4903B6

HY4903B6 N-Channel Enhancement Mode MOSFET Feature Description  Pin Description 30V/314A RDS(ON)= 1.3mΩ(typ.)@VGS = 10V RDS(ON)= 1.7mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Lead Free and Green Devices Available Pin7 (RoHS Compliant) Pin1 TO-263-6L Pin4 Applications Pin1  Switch application  Brushless Motor Drive  DC-DC  Electric Power Steering Pin2,3,5,6,7 N-Channel MOSFET Ordering and Marking Information Package Code B6 B6:TO-263-6L HY4903 Date Code YYXXX WW YYXXXJWW G Assembly Material G:Lead Free Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HOOYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HOOYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr -oduct and/or to this document at any time without notice. www.hooyi.cc V1.0 1 HY4903B6 Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (Tc=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V Maximum Junction Temperature 175 °C -55 to 175 °C Tc=25°C 314 A Tc=25°C 1116 A Tc=25°C 314 A Tc=100°C 222 A Tc=25°C 268 W Tc=100°C 134 W 0.56 °C/W 40 °C/W 1190 mJ TJ TSTG Storage Temperature Range IS Source Current-Continuous(Body Diode) Mounted on Large Heat Sink Note: IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RJC Thermal Resistance, Junction-to-Case RJA Thermal Resistance, Junction-to-Ambient ** EAS SinglePulsed-Avalanche Energy *** * ** *** L=0.5mH Repetitive rating；pulse width limited by max.junction temperature. Surface mounted on 1in 2 FR-4 board. Limited by TJmax , starting TJ=25°C, L = 0.5mH, RG= 25Ω, VGS =10V. Electrical Characteristics(Tc =25°C Unless Otherwise Noted) Symbol Parameter Test Conditions HY4903 Unit Min Typ. Max 30 - - V - - 1 μA - - 5 μA 3 V Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current VGS=0V,IDS=250μA VDS=30V,VGS=0V TJ=55°C Gate Threshold Voltage VDS=VGS, IDS=250μA 1 2 Gate-Source Leakage Current VGS=±20V,VDS=0V - - RDS(ON)* Drain-Source On-State Resistance VGS=10V,IDS=150A - RDS(ON)* Drain-Source On-State Resistance VGS=4.5V,IDS=150A ISD=150A,VGS=0V VGS(th) IGSS ±100 nA 1.3 1.7 mΩ - 1.7 2.5 mΩ - 0.8 1.2 V - 38 - ns - 80 - nC Diode Characteristics VSD* Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=150A,dISD/dt=100A/μs Electrical Characteristics (Cont.) (Tc =25°C Unless Otherwise Noted) www.hooyi.cc V1.0 2 HY4903B6 Symbol Parameter Test Conditions HY4903 Min Typ. Max - 2.1 - - 9417 - Unit Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance VGS=0V,VDS=0V,F=1 MHz VGS=0V, Coss Output Capacitance VDS=25V, - 1226 - Crss Reverse Transfer Capacitance Frequency=1.0MHz - 826 - td(ON) Turn-on Delay Time - 52 - Tr Turn-on Rise Time VDD=20V,RG=4Ω, - 120 - td(OFF) Turn-off Delay Time IDS=150A,VGS=10V - 90 - - 78 - - 269 - - 28 - - 66 - Tf Turn-off Fall Time Gate Charge Ω pF ns Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS =24V, VGS=10V, ID=150A nC Note: *Pulse test，pulse width ≤ 300us，duty cycle ≤ 2% www.hooyi.cc V1.0 3 HY4903B6 Typical Operating Characteristics ID-Drain Current(A) Voltage Figure 2: Drain Current Power Dissipation (w) Figure 1: Power Dissipation Tc-Case Temperature(℃) Tc-Case Temperature(℃) Zθ jc Impedance Thermal Normalized Transient Figure 4: Thermal Transient Impedance Voltage ID-Drain Current(A) Figure 3: Safe Operation Area Maximum Effective Transient Thermal Impedance, Junction-to-Case VDS-Drain-Source Voltage(V) VDS-Drain-Source Voltage (V) Voltage RDS(ON)-ON-Resistance(Ω) Figure 6: Drain-Source On Resistance Voltage ID-Drain Current(A) Figure 5: Output Characteristics ID-Drain Current(A) www.hooyi.cc V1.0 4 HY4903B6 Typical Operating Characteristics(Cont.) Voltage IS-Source Current (A) Figure 8: Source-Drain Diode Forward Voltage Normalized On-Resistance Figure 7: On-Resistance vs. Temperature VDS-Drain-Source Voltage (V) Voltage Figure 10: Gate Charge Characteristics Voltage Figure 9: Capacitance Characteristics VGS-Gate-Source Voltage (V) VSD-Source-Drain Voltage(V) C-Capacitance(pF) Tj-Junction Temperature (℃) QG-Gate Charge (nC) www.hooyi.cc V1.0 5 HY4903B6 Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Gate Charge Test Circuit and Waveforms www.hooyi.cc V1.0 6 HY4903B6 Device Per Unit Package Type Unit Quantity TO-263-6L Tube 50 Package Information TO-263-6L www.hooyi.cc V1.0 7 HY4903B6 Classification Profile Classification Reflow Profiles Profile Feature Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmaxto TP) Liquidous temperature (TL) Time at liquidous (tL) Peak package body Temperature (Tp)* Time (tP)** within 5°C of the specified classification temperature (Tc) Average ramp-down rate (Tpto Tsmax) Time 25°C to peak temperature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 °C 150 °C 150 °C 200 °C 60-120 seconds 60-120 seconds 3 °C/second max. 3°C/second max. 183 °C 217 °C 60-150 seconds 60-150 seconds See Classification Temp in table 1 SeeClassification Tempin table 2 20** seconds 30** seconds 6 °C/second max. 6 °C/second max. 6 minutes max. 8 minutes max. *Tolerance for peak profile Temperature (T p) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. www.hooyi.cc V1.0 8 HY4903B6 Table 1.SnPb Eutectic Process – Classification Temperatures (Tc) Package Volume mm³ Volume mm³ Thickness