HYG120P06LR1C2

HYG120P06LR1C2 P-Channel Enhancement Mode MOSFET Feature  Pin Description -60V/-55A D D D D RDS(ON)= 11 mΩ(typ.) @VGS = -10V D D D D RDS(ON)= 15.5 mΩ(typ.) @VGS = -4.5V  100% avalanche tested  Reliable and Rugged  Halogen Free and Green Devices Available S S S G G S S S (RoHS Compliant) Pin1 PDFN5*6-8L Applications  Switching application  Battery management P-Channel MOSFET Ordering and Marking Information Package Code C2 G120P06 C2 : PDFN5*6-8L XYMXXXXXX Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termination finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes to improve reliability or manufacturability without notice, and Advise customers to obtain the latest version of relevant information to verify before placing orders. www.hymexa.com V1.0 1 HYG120P06LR1C2 Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (Tc=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage -60 V VGSS Gate-Source Voltage ±20 V TJ Junction Temperature Range -55 to 175 °C TSTG Storage Temperature Range -55 to 175 °C Tc=25°C -55 A Tc=25°C -210 A Tc=25°C -55 A Tc=100°C -38.8 A Tc=25°C 75 W Tc=100°C 37.5 W 2 °C/W 110 °C/W 212 mJ IS Drain Current-Continuous Mounted on Large Heat Sink Note: IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RJC Thermal Resistance, Junction-to-Case RJA Thermal Resistance, Junction-to-Ambient ** EAS SinglePulsed-Avalanche Energy *** * ** *** L=0.3mH Repetitive rating; pulse width limited by max junction temperature. Surface mounted on FR-4 board. Limited by TJmax , starting TJ=25°C, L = 0.3mH, RG= 25Ω, VGS = -10V. Electrical Characteristics(Tc =25°C Unless Otherwise Noted) Symbol Parameter Test Conditions HYG120P06LR1 Unit Min Typ Max VGS=0V,IDS=-250uA -60 - - V VDS=-60V, VGS=0V - - -1 uA - - -50 uA -1.2 -1.7 -2.5 V ±100 nA Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current VGS(th) IGSS RDS(ON)* TJ=125°C Gate Threshold Voltage VDS=VGS, IDS=-250uA Gate-Source Leakage Current VGS=±20V,VDS=0V - - VGS=-10V,ID= -20A - 11 15 mΩ 15.5 20 mΩ - -0.83 -1.2 V - 19.5 - ns - 16 - nC Drain-Source On-state Resistance VGS=-4.5V,ID= -20A Diode Characteristics VSD* Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD= -20A,VGS=0V ISD= -20A,dI/dt=100A/us www.hymexa.com V1.0 2 HYG120P06LR1C2 Electrical Characteristics (Cont.) (Tc =25°C Unless Otherwise Noted) Symbol Parameter Test Conditions HYG120P06LR1 Min Typ Max Unit Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V ,F=1MHz - 12 - Ciss Input Capacitance VGS=0V, - 4660 - Coss Output Capacitance VDS=-25V, - 290 - Crss Reverse Transfer Capacitance Frequency=1.0MHz - 198 - td(ON) Turn-on Delay Time - 10 - Tr Turn-on Rise Time VDD= -30V,RG=4Ω, - 48 - td(OFF) Turn-off Delay Time IDS= -20A,VGS=-10V - 173 - - 83 - - 95 - Tf Turn-off Fall Time Gate Charge Ω pF ns Characteristics Qg Total Gate Charge (VGS= -10V) Qg Total Gate Charge (VGS= -4.5V) VDS = -48V, VGS=-10V - 47 - Qgs Gate-Source Charge ID= -20A - 19 - Qgd Gate-Drain Charge - 21 - nC Note: *Pulse test; pulse width ≤ 300us，duty cycle ≤ 2% www.hymexa.com V1.0 3 HYG120P06LR1C2 Typical Operating Characteristics -ID-Drain Current(A) Voltage Figure 2: Drain Current Power Dissipation (w) Figure 1: Power Dissipation Tc-Case Temperature(℃) Impedance Thermal Normalized Transient Figure 4: Thermal Transient Impedance Zθ jc Voltage -ID-Drain Current(A) Figure 3: Safe Operation Area Tc-Case Temperature(℃) Maximum Effective Transient Thermal Impedance, Junction-to-Case -VDS-Drain-Source Voltage(V) -VDS-Drain-Source Voltage (V) Voltage RDS(ON)-ON-Resistance(mΩ) Figure 6: Drain-Source On Resistance Voltage -ID-Drain Current(A) Figure 5: Output Characteristics - ID-Drain Current(A) www.hymexa.com V1.0 4 HYG120P06LR1C2 Typical Operating Characteristics(Cont.) Voltage -IS-Source Current (A) Figure 8: Source-Drain Diode Forward Voltage Normalized On-Resistance Figure 7: On-Resistance vs. Temperature Tj-Junction Temperature (℃) -VDS-Drain-Source Voltage (V) Voltage -VGS-Gate-Source Voltage (V) Figure 10: Gate Charge Characteristics Voltage C-Capacitance(pF) Figure 9: Capacitance Characteristics -VSD-Source-Drain Voltage(V) Q G-Gate Charge (nC) www.hymexa.com V1.0 5 HYG120P06LR1C2 Avalanche Test Circuit Switching Time Test Circuit Gate Charge Test Circuit www.hymexa.com V1.0 6 HYG120P06LR1C2 Device Per Unit Package Type Unit Quantity PPAK5*6-8L Reel 5000 Package Information PPAK5*6-8L www.hymexa.com V1.0 7 HYG120P06LR1C2 Classification Profile Classification Reflow Profiles Profile Feature Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmax to TP) Liquidous temperature (TL) Time at liquidous (tL) Peak package body Temperature (Tp)* Time (tP)** within 5°C of the specified classification temperature (Tc) Average ramp-down rate (Tp to Tsmax) Time 25°C to peak temperature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 °C 150 °C 150 °C 200 °C 60-120 seconds 60-120 seconds 3 °C/second max. 3°C/second max. 183 °C 217 °C 60-150 seconds 60-150 seconds See Classification Temp in table 1 See Classification Temp in table 2 20** seconds 30** seconds 6 °C/second max. 6 °C/second max. 6 minutes max. 8 minutes max. *Tolerance for peak profile Temperature (T p) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. www.hymexa.com V1.0 8 HYG120P06LR1C2 Table 1.SnPb Eutectic Process – Classification Temperatures (Tc) Package Volume mm³ Volume mm³ Thickness