HY0C20C

HY0C20C Dual N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/ 12 A G2 S2 S2 RDS(ON)= 9 mΩ (typ.) @ VGS=4.5 V RDS(ON)= 11.5 mΩ (typ.) @ VGS=2.5 V D1/D2 • High Cell Desity for low Rds(on) • ESD Rating:2000V HBM • Halogen Device Available G1 S1 S1 DFN6L(0203) Bottom Drain Contact Applications • Battery pack protection G1 3 4 G2 S1 2 5 S2 S1 1 6 S2 • Power tool , Cell phone Dual N-Channel MOSFET Ordering and Marking Information Package Code C HY0C20 C : DFN6L(0203) Date Code YYXXX WW ÿ YYXXXJWW C Assembly Material C : Green Device Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate Termination finish;which are fully compliant with RoHS. HUAYI lead -free products meet or exceed the leadFree requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr-oduct and/or to this document at any time without notice. www.hymexa.com 1 V1.0 HY0C20C Absolute Maximum Ratings Parameter Symbol Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 20 VGSS Gate-Source Voltage ±10 Maximum Junction Temperature 150 °C -55 to 150 °C TC=25°C 12 A TC=25°C 48** A TC=25°C 12 TC=70°C 9 TC=25°C 1.56 Tc=70°C 1.00 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RθJA A W 80 Thermal Resistance-Junction to Ambient °C/W Note： * Repetitive rating ; pulse width limiited by junction temperature ** Drain current is limited by junction temperature Electrical Characteristics Symbol (TC = 25°C Unless Otherwise Noted) Parameter Test Conditions HY0C20 Unit Min. Typ. Max. 20 - - V - - 1 µA Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA IDSS Zero Gate Voltage Drain Current VDS=16V, VGS=0V Gate Threshold Voltage VDS=VGS, IDS=250µA 0.5 0.8 1.5 V Gate Leakage Current VGS =±8 V, VDS=0V - - ±10 uA VGS=4.5V,IDS= 8 A - 9 11 mΩ VGS=2.5V, IDS=5.5 A - 11.5 14 mΩ ISD=1 A, VGS =0V - 0.7 1.1 V VGS(th) IGSS RDS(ON)* Drain-Source On-state Resistance Diode Characteristics VSD * Diode Forward Voltage www.hymexa.com 2 V1.0 HY0C20C Electrical Characteristics (Cont.) Symbol Parameter (TC = 25°C Unless Otherwise Noted) Test Conditions HY0C20 Min. Typ. Max. - 670 - - 180 - - 140 - - 15 - - 22 - - 46 - - 21 - - 10 - - 1.6 - - 4 - Unit Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time Tf VGS=0V, VDS=10V, Frequency=1.0MHz VDD=10V, R G =6 Ω, IDS =1A, VGS =4.5V, Turn-off Fall Time pF ns Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=16V, VGS=4.5V, I DS =6 A nC Note * : Pulse test ; pulse width ≤300µs, duty cycle≤2%. . www.hymexa.com 3 V1.0 HY0C20C Typical Operating Characteristics Power Dissipation Drain Current 14 ID - Drain Current (A) Ptot - Power (W) 2.5 2.0 1.5 1.0 12 10 8 6 4 0.5 2 o TC=25 C 0 0 o TC=25 C,VG=4.5V 0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 160 180 200 Tc - Case Temperature (°C) Tc - Case Temperature (°C) Safe Operation Area ID - Drain Current (A) 100 it Lim n) o ( s Rd 10 100us 10ms 1 1ms 0.1 DC 0.1 10 1 400 100 VDS - Drain - Source Voltage (V) Thermal Resistance Normalized Transient 1 D = 0.5 0.2 0.1 0.1 R JA (t ) = ( r t) * R JA RJA =80°C/W 0.05 P(pk) 0.02 t1 t2 0.01 TJ - TA = P * R JA (t) Duty Cycle , D = t1 / t2 SINGLE PULSE 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve www.hymexa.com 4 V1.0 HY0C20C Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 40 24 ID - Drain Current (A) 35 30 RDS(ON) - On - Resistance (mΩ) VGS= 2.5,3,3.5,4.5V 2.0V 25 20 15 1.5V 10 5 0 0 0.5 1 1.5 2 21 18 15 VGS=2.5V 12 9 6 3 0 2.5 VGS=4.5V 0 3 6 ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage 1.8 15 IDS =250µA IDS=8A 1.6 14 Normalized Threshold Vlotage RDS(ON) - On - Resistance (mΩ) 12 VDS - Drain-Source Voltage (V) 16 12 10 8 6 4 2 9 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1 2 3 4 5 0.0 -50 -25 6 25 50 75 100 125 150 175 Tj - Junction Temperature (°C) VGS - Gate - Source Voltage (V) www.hymexa.com 0 5 V1.0 HY0C20C Typical Operating Characteristics (Cont.) Source-Drain Diode Forward Drain-Source On Resistance 2.2 VGS = 4.5V 10 IDS = 8A 1.8 IS - Source Current (A) Normalized On Resistance 2.0 1.6 1.4 1.2 1.0 0.8 o Tj=150 C 1 o Tj=25 C 0.1 0.6 0.4 o RON@T =25 C:9m Ω j 0.2 -50 -25 0 25 50 0.01 0.0 75 100 125 150 175 0.6 0.9 1.2 Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) Capacitance Gate Charge 1.5 10 1000 Frequency=1MHz VDS=16V 9 VGS - Gate-source Voltage (V) 900 800 C - Capacitance (pF) 0.3 Ciss 700 600 500 400 Coss 300 200 100 Crss 5 10 15 7 6 5 4 3 2 0 20 VDS - Drain - Source Voltage (V) www.hymexa.com 8 1 0 0 IDS= 6A 0 2 4 6 8 10 12 14 QG - Gate Charge (nC) 6 V1.0 HY0C20C Avalanche Test Circuit Switching Time Test Circuit Gate Charge Test Circuit www.hymexa.com 7 V1.0 HY0C20C Package Information DFN6L(0203*0.75-0.65) www.hymexa.com 8 V1.0 HY0C20C Classification Profile Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 C 150 C 60-120 seconds 150 C 200 C 60-120 seconds 3 C/second max. 3C/second max. 183 C 60-150 seconds 217 C 60-150 seconds See Classification Temp in table 1 See Classification Temp in table 2 Time (tP)** within 5C of the specified classification temperature (Tc) 20** seconds 30** seconds Average ramp-down rate (Tp to Tsmax) 6 C/second max. 6 C/second max. 6 minutes max. 8 minutes max. Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmax to TP) Liquidous temperature (TL) Time at liquidous (tL) Peak (Tp)* package body Temperature Time 25C to peak temperature * Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. www.hymexa.com 9 V1.0 HY0C20C Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) 3 Package Thickness