50N06

50N06 N-Channel Enhancement Mode MOSFET TO-252 Package Information General Features TO-252 VDS = 60V ID =50 A RDS(ON) < 15mΩ @ VGS=10V PIN2 D ! Application Battery protection " PIN1 G ! ! " " " Description ! The 50N06D uses advanced trench technology PIN3 S Load switch Uninterruptible power supply to provide excellent RDS(ON), low gate charge and N-Channel MOSFET operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V 1 50 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 25 A ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 7.4 A ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 6 A IDM Pulsed Drain Current2 90 A 39.2 mJ EAS Single Pulse Avalanche Energy3 IAS Avalanche Current 28 A PD@TC=25℃ Total Power Dissipation4 45 W PD@TA=25℃ Dissipation4 2 W Total Power TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-Ambient 1 62 ℃/W REV 1.0 2017 JAN PAGE:1/4 50N06 Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient Conditions Min. Typ. Max. Unit VGS=0V , ID=250uA 60 --- --- V Reference to 25℃ , ID=1mA --- 0.057 --- V/℃ VGS=10V , ID=20A --- 11 15 RDS(ON) VGS(th) Static Drain-Source Gate Threshold Voltage VGS=4.5V , ID=10A --1.2 20 --- 25 2.5 mΩ V △VGS(th) VGS(th) Temperature Coefficient VGS=VDS , ID =250uA VDS=48V , VGS=0V , TJ=25℃ ----- -5.68 --- --1 mV/℃ IDSS IGSS Drain-Source Leakage Current Gate-Source Leakage Current VDS=48V , VGS=0V , TJ=55℃ --- --- 5 VGS=±20V , VDS=0V --- --- ±100 uA nA gfs Forward Transconductance VDS=5V , ID=15A --- 45 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.7 --- Ω Qg Total Gate Charge (4.5V) --- 19.3 --- Qgs Gate-Source Charge --- 7.1 --- Qgd Gate-Drain Charge --- 7.6 --- Td(on) Turn-On Delay Time --- 7.2 --- --- 50 --- --- 36.4 --- --- 7.6 --- --- 2423 --- --- 145 --- --- 97 --- --- --- 35 A --- --- 80 A --- --- 1 V --- 16.3 --- nS --- 11 --- nC Tr Td(off) Tf On-Resistance2 Rise Time Turn-Off Delay Time Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance IS Continuous Source Current1,5 ISM VSD Pulsed Source Current2,5 Diode Forward Voltage2 trr Reverse Recovery Time Qrr Reverse Recovery Charge VDS=48V , VGS=4.5V , ID=15A VDD=30V , VGS=10V , RG=3.3 , ID=15A VDS=15V , VGS=0V , f=1MHz VG=VD=0V , Force Current VGS=0V , IS=A , TJ=25℃ IF=15A , TJ=25℃ dI/dt=100A/µs , nC ns pF Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=28A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation REV 1.0 2017 JAN PAGE:2/4 50N06 Typical Characteristics 20 ID=12A RDSON (mΩ) 19 18 17 16 15 4 6 VGS (V) 8 10 Fig.2 On-Resistance v.s Gate-Source Fig.1 Typical Output Characteristics Voltage 12 IS Source Current(A) 10 8 6 TJ=150℃ TJ=25℃ 4 2 0 0.2 0.4 0.6 0.8 1 VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics diode 2.0 Normalized On Resistance Normalized VGS(th) 1.5 1.5 1 1.0 0.5 0.5 0 -50 0 50 100 TJ ,Junction Temperature ( ℃) Fig.5 Normalized VGS(th) v.s TJ 150 -50 0 50 100 150 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON v.s TJ REV 1.0 2017 JAN PAGE:3/4 50N06 Typical Characteristics 10000 Capacitance (pF) F=1.0MHz Ciss 1000 Coss 100 Crss 10 1 5 9 13 17 VDS Drain to Source Voltage(V) 21 25 Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.3 0.1 0.1 0.05 0.02 PDM TON T 0.01 D = TON/T SINGLE PULSE 0.01 0.00001 TJpeak = TC + PDM x RθJC 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% BVDSS 1 L x IAS2 x 2 BVDSS BVDSS-VDD VDD IAS 10% VGS Td(on) Tr Ton Td(off) Tf Toff Fig.10 Switching Time Waveform VGS Fig.11 Unclamped Inductive Switching Waveform REV 1.0 2017 JAN PAGE:4/4