AO3407

AO3407 SOT-23 Plastic-Encapsulate MOSFETS FEATURE High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z z High saturation current capability A M D SOT-23 3 1. GATE e e C a E 2. SOURCE 3. DRAIN L1 L Equivalent Circuit 1 HE 2 SOT-23 mechanical data UNIT Marking mm Type number Marking code 3407 AO3407 mil A E HE max 1.1 0.15 1.4 3.0 2.6 min 0.9 0.08 1.2 2.8 2.2 max 43 6 55 118 102 20 77 min 3 47 110 12 67 35 C D 87 e M L L1 a 0.5 1.95 0.55 0.36 0.0 (ref) (ref) 0.3 1.7 0.15 22 14 0.0 (ref) (ref) 6 Absolute Maximum Ratings (TA=25℃unless otherwise noted) Symbol Limit Unit Drain-Source Voltage Parameter VDS -30 V Gate-Source Voltage VGS ±20 V ID -4.1 A IDM -20 A PD 1.2 W TJ,TSTG -55 To 150 ℃ RθJA 90 ℃/W Drain Current-Continuous Drain Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) REV 1.0 2021 JAN PAGE:1/4 AO3407 Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -30 -33 - V Zero Gate Voltage Drain Current IDSS VDS=-24V,VGS=0V - - -1 μA Symbol Condition Min Typ Max Unit IGSS VGS=±20V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -1 -1.5 -3 V Drain-Source On-State Resistance RDS(ON) VGS=-10V, ID=-4.1A - 48 65 mΩ VGS=-4.5V, ID=-4A - 60 95 mΩ VDS=-5V,ID=-4.1A 5.5 - - S - 650 - PF Off Characteristics Parameter Gate-Body Leakage Current On Characteristics (Note 3) Forward Transconductance Dynamic Characteristics gFS (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss Switching Characteristics VDS=-15V,VGS=0V, F=1.0MHz - 105 - PF - 65 - PF (Note 4) Turn-on Delay Time td(on) - 8.5 - nS Turn-on Rise Time tr VDD=-15V,RL=3.6Ω - 4.5 - nS td(off) VGS=-10V,RGEN=3Ω - 26 - nS Turn-Off Delay Time Turn-Off Fall Time tf - 12.5 - nS Total Gate Charge Qg - 12.5 - nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=-15V,ID=-4A,VGS=-10V - 2.8 - nC - 2.7 - nC - - -1.2 V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD VGS=0V,IS=-4.1A REV 1.0 2021 JAN PAGE:2/4 RATING AND CHARACTERISTIC CURVES (AO3407) Figure 1:Switching Test Circuit PD Power(W) ID- Drain Current (A） Figure 2:Switching Waveforms TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure 4 Drain Current ID- Drain Current (A) Rdson On-Resistance(mΩ) Figure 3 Power Dissipation Vds Drain-Source Voltage (V) Figure 5 Output Characteristics ID- Drain Current (A) Figure 6 Drain-Source On-Resistance REV 1.0 2021 JAN PAGE:3/4 ID- Drain Current (A) Normalized On-Resistance RATING AND CHARACTERISTIC CURVES (AO3407) TJ-Junction Temperature(℃) Vgs Gate-Source Voltage (V) Figure 8 Drain-Source On-Resistance C Capacitance (pF) Rdson On-Resistance(mΩ) Figure 7 Transfer Characteristics Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V) Figure 10 Capacitance vs Vds Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) Figure 9 Rdson vs Vgs Qg Gate Charge (nC) Figure 11 Gate Charge Vsd Source-Drain Voltage (V) Figure 12 Source- Drain Diode Forward REV 1.0 2021 JAN PAGE:4/4