0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
ESD12VD3B

ESD12VD3B

  • 厂商:

    YINT(音特电子)

  • 封装:

    SOD-323

  • 描述:

    ESD12VD3B

  • 数据手册
  • 价格&库存
ESD12VD3B 数据手册
ESD Protection Diode ESD12VD3B Trustworthy electronic circuit protection expert ESD12VD3B Description ESD12VD3B is designed to protect voltage sensitive components from ESD and transient voltage events. Excellent clamping capability, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board space is at a premium. Because of its small size, it is suited for use in cellular phones, MP3 players, digital cameras and many other portable applications where board space is at a premium Features Functional Diagram ●Ultra low leakage: nA level ●Operating voltage: 12V ●Package: SOD-323 ●Low clamping voltage ●Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±15kV Applications Contact discharge: ±8kV ●Cell Phone Handsets and Accessories – IEC61000-4-4 (EFT) 40A (5/50ns) ●Microprocessor based equipment – IEC61000-4-5 (Lightning) 12A (8/20μs) ●Personal Digital Assistants (PDA’s) ●Notebooks, Desktops, and Servers ●Portable Instrumentation ●Peripherals ●Pagers Absolute Maximum Ratings(Tamb=25°C unless otherwise specified) Parameter Peak Pulse Power (8/20µs) ESD per IEC 61000−4−2 (Air) Symbol Value Unit P 320 Watts ±15 KV ±8 KV V ESD per IEC 61000−4−2 (Contact) PP ESD Lead Soldering Temperature TL 260 (10 sec) °C Operating Temperature Range TJ -55 to +150 °C TSTJ -55 to +150 °C Storage Temperature Range www.yint.com.cn 1 Rev:19.3 ESD Protection Diode ESD12VD3B Trustworthy electronic circuit protection expert Electrical Characteristics (TA = 25 °C unless otherwise noted) Parameter Reverse Stand-off Voltage Reverse breakdown Voltage Reverse Leakage Current Symbol Conditions Min. VRWM It = 1mA VR IR VC Junction Capacitance CJ Max. 12 VBR Clamping Voltage Typ. =VRWM 13.3 Units V V 1 μA IPP=1A, tP = 8/20μs 19 V IPP=13A, tP = 8/20μs 25 V 110 pF VR=0V, f = 1MHz Characteristics Curves Figure 1- Power Derating Curve Figure 2- ESD Pulse Waveform (according to IEC 61000-4-2) Figure3- 8/20µs Pulse Waveform www.yint.com.cn 2 Rev:19.3 ESD Protection Diode ESD12VD3B Trustworthy electronic circuit protection expert ACKAGE OUTLINE DIMENSIONS in millimeters (inches) :SOD323 Mounting Pad Layout Disclaimer Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. www.yint.com.cn 3 Rev:19.3
ESD12VD3B 价格&库存

很抱歉,暂时无法提供与“ESD12VD3B”相匹配的价格&库存,您可以联系我们找货

免费人工找货