ESDSR05

ESDSR05 Low Capacitance ESD Protection -ESDSR05 Description The ESDSR05 consists of four, low capacitance steering diodes and a low voltage TVS diode that provide protection against ESD and lightning surge events. Each channel or I/O pin can safely absorb up to 25A (tp=8/20 μs) and repetitive ESD strikes above the maximum level (Level 4) specified in the IEC 61000-4-2 international standard without performance degradation. The low capacitance of the steering diode allows the designer to protect high speed data applications . The small SOT-143 package with four leads reduces the internal lead inductance for low overshoot voltage during fast front time transient events such as ESD and EFT . Features  Case :JEDEC SOT-143 package  Low clamping voltage  Small packaging options saves board space  Low capacitance :4 pF typical  Protection for 2 Lines  Compatible with IEC 61000-4-2(ESD) :Air 15KV , Contact 8KV  Compatible with IEC 61000-4-4(EFT) :40A ,5/50 nS  Compatible with IEC 61000-4-5(Surge):24A ,8/20 uS - level 2 (line-GND)&Level 3 (Line-Line) Applications  USB Power and Data Line Protection  10/100/1000 Ethernet  Video Graphics Cards  SIM Ports  ATM Interfaces   Montors and Flat Panel Displays Digital Video Interface(DVI)  IEEE 1394 Fire wire Ports Schematic and PIN Configuration Application Example Protection USB Port Protection 1 WWW.YINT.COM.CN VER4.0 ESDSR05 Absolute Maximum Ratings Parameter Symbol Value Units Peak Current (tp =8/20μs) PPK 500 W Peak Current (tp =8/20μs) IPP 25 A IEC61000-4-2 (Contact) VESD >8 kV IEC61000-4-2 (Air) VESD >15 kV Lead Soldering Temperature TL 260 (10 sec) °C Operating Temperature TJ -50 to 150 °C Storage Temperature Range TSTG -50 to 150 °C Electrical Characteristics (T =25°C) Parameter Symbol Conditions Reverse Stand-off Voltage VRWM Reverse Breakdown Voltage VBR Reverse Leakage Current IR VRWM =5.0V, T=25℃ Clamping Voltage VC IPP = 1A, Clamping Voltage VC IPP=10A, Junction Capacitance CJ Min. Typ. Max. 5 It = 1mA 6 Units V V 5 μA tP = 8/20μs 9.8 V tP = 8/20μs 12 V 2.5 pF VR=0V, f = 1MHz 0.7 2 WWW.YINT.COM.CN VER4.0 ESDSR05 Rating & Characteristic Curves Figure 2- Clamping Voltage vs Current Figure 1- Power Derating Curve Figure 3- Typical Junction Capacitance Figure 4- Pulse Waveform 3 WWW.YINT.COM.CN VER4.0 ESDSR05 PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SOT-143 Millimeters Inches Dim MIN Recommended Pad Layout MAX MIN MAX A 2.80 3.04 0.110 0.120 B 1.20 1.39 0.047 0.055 C 0.84 1.14 0.033 0.045 D 0.39 0.50 0.015 0.020 F 0.79 0.93 0.031 0.037 G 1.78 2.03 0.070 0.080 J 0.08 0.15 0.003 0.006 K 0.46 0.60 0.018 0.024 L 0.045 0.60 0.0175 0.024 L1 0.4 0.60 0.016 0.024 R 0.72 0.83 0.028 0.033 S 2.11 2.48 0.083 0.098 Disclaimer Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device 4 WWW.YINT.COM.CN VER4.0 ESDSR05 performance may vary over time. Users should verify actual device performance in their specific applications. 5 WWW.YINT.COM.CN VER4.0