AM9435SA

AM9435 -30V P-Channel Enhancement Mode MOSFET ■ DESCRIPTION The AM9435 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching. ■FEATURE ‹ ‹ ‹ ‹ ‹ ‹ -30V/-5.2A, RDS(ON) ＜ 60mΩ@VGS = -10V -30V/-4.0A, RDS(ON) ＜90mΩ@VGS = -4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability Full RoHS compliance SOP-8 package design ■APPLICATIONS ‹ ‹ ‹ ‹ ‹ ‹ ‹ Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter ■PIN CONFIGURATION S S S Top View S 1 8 D S 2 7 D S 3 6 D G 4 5 D SOP-8 TOP VIEW SOP-8 G DD DD P-Channel 1 Axelite Confidential Materials, do not copy or distribute without written consent. Rev.1.1 May 19, 2016 AM9435 ■PART MARKING INFORMATION AM9435X - X Package S : SOP-8 Packing Package MARKING Packing Blank : Tube A : Taping YY: Year Code WW: Week Code A: Process Code AM9435 YYWWA ■ORDERING INFORMATION Part Number Package Code Package Shipping S SOP-8 2500 /Tape&Reel AM9435S-A ※ Year Code : 00 ~ 99 ※ Week Code : 01~52 ※ SOP-8 : Only available in tape and reel packaging. (A reel contains 2500 devices) ■ABSOLUTE MAXIMUM RATINGS (TA = 25℃ Unless otherwise noted ) Symbol Parameter Typical Unit VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage ±20 V -5.2 A ID Continuous Drain Current (TJ=150℃) IDM Pulsed Drain Current -20 A IS Continuous Source Current (Diode Conduction) -2.4 A TJ Operation Junction Temperature -55~150 ℃ Storage Temperature Range -55~150 2.8 1.8 70 ℃ TSTG PD RθJA Power Dissipation Thermal Resistance-Junction to Ambient VGS = -10V TA=25℃ TA=70℃ W ℃/W Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2 Axelite Confidential Materials, do not copy or distribute without written consent. Rev.1.1 May 19, 2016 AM9435 ■ELECTRICAL CHARACTERISTICS(TA = 25℃ Unless otherwise noted ) Symbol Parameter Condition Min V(BR)DSS Drain-Source Breakdown Voltage VGS =0V,ID =-250μA -30 VGS(th) Gate Threshold Voltage VDS =VGS,ID =-250μA -1.0 IGSS Gate Leakage Current IDSS Zero Gate Voltage Drain Current ID(ON) On-State Drain Current RDS(ON) Drain-source On-Resistance Gfs Forward Transconductance Typ Max Unit Static Parameters V -3.0 V VDS =0V,VGS=±20V ±100 nA VDS =-30V,VGS =0V VDS =-30V,VGS =0V TJ =55℃ VDS ≦-5V,VGS ≦-10V -1 μA -5 -25 A VGS =-10V,ID=-5.2A 48 60 VGS =-4.5V, ID=-4.0A 74 90 VDS =-10V,ID =-5.2A 10 mΩ S Source-Drain Doide Is Diode forward Current (Max.) VSD Diode Forward Voltage IS=-2.0A,VGS=0V 2.6 A -0.8 -1.2 V 15 10 Dynamic Parameters Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) tr td(off) tf Turn-On Time Turn-Off Time VDS =-15V,VGS =-10V ID =-5.0A 4.0 nC 2.0 680 VDS =-15V,VGS =0V f =1MHz pF 120 75 VDD =-15V,RL =15Ω ID =-1.0A,VGEN =-10V RG =6Ω 7.0 15 10 20 40 80 20 40 nS Note : 1. Pulse test: pulse width