B1D04065E

B1D04065E SiC Schottky Diode VRRM = 650 V IF(Tc=150°C) = 4A QC = 11.3 nC Features:  Extremely low reverse current  No reverse recovery current  Temperature independent switching  Positive temperature coefficient on VF  Excellent surge current capability  Low Capacitive charge Benefits  Essentially No switching losses  System efficiency improvement over Si Diodes  Increased power density  Enabling higher switching frequency  Reduction of Heat Sink Requirements  System Cost savings due to smaller magnetics  Reduced EMI Applications  Switch Mode Power Supplies (SMPS)  Uninterruptable power supplies  Motor Drivers  Power Factor Correction Pacakge Pin definitions  Pin1-Cathode  Pin2-Cathode  Pin3-Anode Package Parameters Rev 1.0 Part Number Marking Package B1D04065E B1D04065E TO-252-3L www.basicsemi.com Page 1/7 B1D04065E SiC Schottky Diode Maximum ratings Symbol Parameter Test conditions Value Unit VRRM Repetitive Peak Reverse Voltage 650 V VRSM Surge Peak Reverse Voltage 650 V IF Continuous Forward Current Tc=25°C Tc=135°C Tc=150°C 14 6 4 A IFSM Non-Repetitive Forward Surge Current Tc=25°C , tp=10ms, sine halfwave 32 A ∫i2dt i t Value Tc=25°C ,tp=10ms 5.12 AS Ptot Power Dissipation Tc=25°C Tc=110°C 60 25 W Operating junction temperature -55~175 °C Storage temperature -55~135 °C Tj Tstg 2 2 Thermal Characteristics Symbol Rev 1.0 Parameter Min. Value Typ. Max. Unit Rth(jc) Thermal resistance from junction to case 2.46 K/W Rth(ja) Thermal resistance from junction to ambient 119.7 K/W www.basicsemi.com Page 2/7 B1D04065E SiC Schottky Diode Electrical Characteristics Static Characteristics（Tj=25°C unless otherwise specified） Symbol Parameter Test conditions Min. Value Typ. Max. 650 Unit VDC DC blocking voltage Tj=25°C V VF Diode forward voltage IF=4A Tj=25°C IF=4A Tj=175°C 1.45 1.9 V IR Reverse current VR=650V Tj=25°C VR=650V Tj=175°C 0.05 3 μA Dynamic Characteristics（Tj=25°C unless otherwise specified） Symbol Parameter Test conditions Min. Value Typ. Max. Unit VR=400V Tj=25°C QC Total capactive charge VR 11.3 nC 177 28.6 28.4 pF 𝑄𝐶 = ∫0 C(V)dV C Rev 1.0 Total Capacitance VR=1V f=1MHz VR=300V f=1MHz VR=600V f=1MHz www.basicsemi.com Page 3/7 B1D04065E SiC Schottky Diode Rev 1.0 Figure 1. Typical forward characteristics Figure 2. Typical reverse current as function of reverse voltage Figure 3. Diode forward current as function of temperature, D=duty cycle Figure 4. Typical capacitance as function of reverse voltage, C=f(VR); T j =25°C; f=1 MHz www.basicsemi.com Page 4/7 B1D04065E SiC Schottky Diode Figure 5. Typical reverse charge as function of reverse voltage Figure 6. Power dissipation as function of case temperature 10 Zthjc (K/W) 1 D=0.5 D=0.3 D=0.1 D=0.05 D=0.02 D=0.01 Single Pulse 0.1 0.01 0.001 1E-6 1E-5 1E-4 0.001 0.01 0.1 tp (s) Figure 7. Max. transient thermal impedance, Zth,jc=f(t ), parameter: D=t /T Rev 1.0 www.basicsemi.com Page 5/7 B1D04065E SiC Schottky Diode Package Dimensions Rev 1.0 www.basicsemi.com Page 6/7 B1D04065E SiC Schottky Diode Revision History: 2019-05-30,Rev.1.0 Previous Revision: Rev.1.0 Release of datasheet BASiC Semiconductor Ltd. Shenzhen, China © 2018 BASiC Semiconductor Ltd. All Rights Reserved. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest BASiC Semiconductor Office Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, BASiC semiconductor Ltd. hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Rev 1.0 www.basicsemi.com Page 7/7