B1D10120H

B1D10120H SiC Schottky Diode VRRM = 1200 V IF(Tc=150°C) = 10 A QC = 63 nC Features: ⚫ Extremely low reverse current ⚫ No reverse recovery current ⚫ Temperature independent switching ⚫ Positive temperature coefficient on VF ⚫ Excellent surge current capability ⚫ Low Capacitive charge 1 2 Benefits ⚫ Essentially No switching losses ⚫ System efficiency improvement over Si Diodes ⚫ Increased power density ⚫ Enabling higher switching frequency ⚫ Reduction of Heat Sink Requirements ⚫ System Cost savings due to smaller magnetics ⚫ Reduced EMI Applications ⚫ Switch Mode Power Supplies (SMPS) ⚫ Uninterruptable power supplies ⚫ Motor Drivers ⚫ Power Factor Correction Pacakge Pin definitions ⚫ Pin1- Cathode ⚫ Pin2- Anode Package Parameters Preliminary Version Part Number Marking Package B1D10120H B1D10120H TO-247-2L www.basicsemi.com Page 1 / 7 B1D10120H SiC Schottky Diode Maximum ratings Symbol Parameter Test conditions Value Unit VRRM Repetitive Peak Reverse Voltage 1200 V VRSM Surge Peak Reverse Voltage 1200 V IF Continuous Forward Current Tc=25°C Tc=135°C Tc=150°C 35 16.5 10 A IFSM Non-Repetitive Forward Surge Current Tc=25°C , tp=10ms, sine halfwave 77 A ∫i2dt i2t Value Tc=25°C ,tp=10ms 29.6 A2S Power Dissipation Tc=25°C Tc=110°C 197 85 W Operating junction temperature -55~175 °C Storage temperature -55~135 °C Ptot Tj Tstg Thermal Characteristics Symbol Parameter Min. Value Typ. Max. Unit Rth(jc) Thermal resistance from junction to case 0.76 K/W Rth(ja) Thermal resistance from junction to ambient 35.6 K/W Preliminary Version www.basicsemi.com Page 2 / 7 B1D10120H SiC Schottky Diode Electrical Characteristics Static Characteristics（Tj=25°C unless otherwise specified） Symbol Parameter Test conditions Min. Value Typ. Max. 1200 Unit VDC DC blocking voltage Tj=25°C V VF Diode forward voltage IF=10A Tj=25°C IF=10A Tj=175°C 1.46 2.05 V IR Reverse current VR=1200V Tj=25°C VR=1200V Tj=175°C 4.5 45 μA Dynamic Characteristics（Tj=25°C unless otherwise specified） Symbol QC Parameter Total capactive charge Test conditions VR=800V Tj=25°C VR Min. Value Typ. Max. Unit 63 nC 614 62 51 pF 𝑄𝐶 = ∫0 C(V)dV C Preliminary Version Total Capacitance VR=1V f=1MHz VR=400V f=1MHz VR=800V f=1MHz www.basicsemi.com Page 3 / 7 B1D10120H SiC Schottky Diode Typical Performance Figure 2. Typical reverse current as function of reverse voltage Figure 1. Typical forward characteristics Figure 3. Diode forward current as function of temperature, D=duty cycle Preliminary Version Figure 4. Typical capacitance as function of reverse voltage, C=f(VR); T j =25°C; f=1 MHz www.basicsemi.com Page 4 / 7 B1D10120H SiC Schottky Diode 200 Ptot (W) 150 100 50 0 25 50 75 100 125 150 175 Tc (℃) Figure 5. Typical reverse charge as function of reverse voltage Figure 6. Power dissipation as function of case temperature Zthjc (K/W) 1 0.1 D=0.5 D=0.3 D=0.1 D=0.05 D=0.02 D=0.01 Single Pulse 0.01 0.001 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 tp (s) Figure 7. Max. transient thermal impedance, Zth,jc=f(t ), parameter: D=t /T Preliminary Version www.basicsemi.com Page 5 / 7 B1D10120H SiC Schottky Diode Package Dimensions Preliminary Version www.basicsemi.com Page 6 / 7 B1D10120H SiC Schottky Diode Revision History Revision: Preliminary Version Previous Revision: BASiC Semiconductor Ltd. Shenzhen, China © 2018 BASiC Semiconductor Ltd. All Rights Reserved. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest BASiC Semiconductor Office Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, BASiC semiconductor Ltd. hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Preliminary Version www.basicsemi.com Page 7 / 7