B1D10065KF

B1D10065KF SiC Schottky Diode VRRM = 650 V IF(Tc=95°C) = 10 A QC = 31 nC Features: ⚫ Extremely low reverse current ⚫ No reverse recovery current ⚫ Temperature independent switching ⚫ Positive temperature coefficient on VF ⚫ Excellent surge current capability ⚫ Low Capacitive charge Benefits ⚫ Essentially No switching losses ⚫ System efficiency improvement over Si Diodes ⚫ Increased power density ⚫ Enabling higher switching frequency ⚫ Reduction of Heat Sink Requirements ⚫ System Cost savings due to smaller magnetics ⚫ Reduced EMI Applications ⚫ Switch Mode Power Supplies (SMPS) ⚫ Uninterruptable power supplies ⚫ Motor Drivers ⚫ Power Factor Correction Pacakge Pin definitions ⚫ Pin1-Cathode ⚫ Pin2-Anode Package Parameters Rev 1.1 Part Number Marking Package B1D10065KF B1D10065KF TO-220F-2L www.basicsemi.com Page 1 / 7 B1D10065KF SiC Schottky Diode Maximum ratings Symbol Parameter Test conditions Value Unit VRRM Repetitive Peak Reverse Voltage 650 V VRSM Surge Peak Reverse Voltage 650 V IF Continuous Forward Current Tc=25°C Tc=95°C Tc=150°C 24 10 4.5 A IFSM Non-Repetitive Forward Surge Current Tc=25°C , tp=10ms, sine halfwave 70 A ∫i2dt i2t Value Tc=25°C ,tp=10ms 24.5 A2S Power Dissipation Tc=25°C Tc=110°C 33 14 W Operating temperature -55~175 °C Storage temperature -55~135 °C Ptot Tj Tstg Thermal Characteristics Symbol Rev 1.1 Parameter Min. Value Typ. Max. Unit Rth(jc) Thermal resistance from junction to case 4.44 K/W Rth(ja) Thermal resistance from junction to ambient 55.85 K/W www.basicsemi.com Page 2 / 7 B1D10065KF SiC Schottky Diode Electrical Characteristics Static Characteristics（Tj=25°C unless otherwise specified） Symbol Parameter Test conditions Min. Value Typ. Max. 650 Unit VDC DC blocking voltage Tj=25°C V VF Diode forward voltage IF=10A Tj=25°C IF=10A Tj=175°C 1.48 1.7 V IR Reverse current VR=650V Tj=25°C VR=650V Tj=175°C 0.07 3.5 μA Dynamic Characteristics（Tj=25°C unless otherwise specified） Symbol QC Parameter Total capactive charge Test conditions VR=400V Tj=25°C VR Min. Value Typ. Max. Unit 31 nC 450 54.7 52.3 pF 𝑄𝐶 = ∫0 C(V)dV C Rev 1.1 Total Capacitance VR=1V f=1MHz VR=300V f=1MHz VR=500V f=1MHz www.basicsemi.com Page 3 / 7 B1D10065KF SiC Schottky Diode 1x10-4 20 9x10-5 8x10-5 16 7x10-5 150℃ 12 IR (A) IF (A) 25℃ 175℃ 100℃ 6x10-5 5x10-5 4x10-5 8 200℃ 150℃ -5 3x10 100℃ 2x10-5 4 25℃ 1x10-5 0 0.0 0 0.5 1.0 1.5 2.0 2.5 0 3.0 200 400 600 800 1000 VR (V) VF (V) Figure 1. Typical forward characteristics Figure 2. Typical reverse current as function of reverse voltage 600 500 C (pF) 400 300 200 100 0 0.1 1 10 100 1000 VR (V) Figure 3. Diode forward current as function of temperature, D=duty cycle Rev 1.1 Figure 4. Typical capacitance as function of reverse voltage, C=f(VR); T j =25°C; f=1 MHz www.basicsemi.com Page 4 / 7 B1D100650KF SiC Schottky Diode 40 35 30 Qc (nC) 25 20 15 10 5 0 0 100 200 300 400 500 600 VR (V) Figure 5. Typical reverse charge as function of reverse voltage Figure 6. Power dissipation as function of case temperature 10 Zthjc (K/W) 1 D=0.5 D=0.3 D=0.1 D=0.05 D=0.02 D=0.01 Single Pulse 0.1 0.01 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10 100 tp (s) Figure 7. Max. transient thermal impedance, Zth,jc=f(t ), parameter: D=t /T Rev 1.1 www.basicsemi.com Page 5 / 7 B1D10065KF SiC Schottky Diode Package Dimensions Rev 1.1 www.basicsemi.com Page 6 / 7 B1D10065KF SiC Schottky Diode Revision History: 2019-05-15 Premilinary Version BASiC Semiconductor Ltd. Shenzhen, China © 2018 BASiC Semiconductor Ltd. All Rights Reserved. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest BASiC Semiconductor Office Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, BASiC semiconductor Ltd. hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Rev 1.1 www.basicsemi.com Page 7 / 7