深圳市英锐芯电子科技有限公司
PNP功率晶体管 B772
PNP SILICON EPITAXIAL POWER TRANSISTOR
These devices are intended for use in audio
frequency power amplifier and low speed switching
applications
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Base Voltage
-VCBO
40
V
Collector Emitter Voltage
-VCEO
30
V
Emitter Base Voltage
-VEBO
5
V
Collector Current
-IC
3
A
Peak Collector Current (t = 10 ms)
-ICP
7
A
Base Current
-IB
0.6
A
Total Power Dissipation @ Ta = 25 C
PD
1
W
Total Power Dissipation @ Tc = 25 OC
PD
10
W
Tj , Tstg
- 65 to + 150
O
Operating and Storage Junction Temperature Range
O
C
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at -VCE = 2 V, -IC = 20 mA
at -VCE = 2 V, -IC = 1 A
Current Gain Group
Symbol
Min.
Typ.
Max.
Unit
hFE
hFE
hFE
hFE
hFE
30
60
100
160
200
-
120
200
320
400
-
-ICBO
-
-
1
µA
-IEBO
-
-
1
µA
-V(BR)CBO
40
-
-
V
-V(BR)CEO
30
-
-
V
-V(BR)EBO
5
-
-
V
-VCE(sat)
-
-
0.5
V
-VBE(sat)
-
-
2
V
fT
-
80
-
MHz
Cob
-
55
-
pF
R
Q
P
E
Collector Base Cutoff Current
at -VCB = 30 V
Emitter Base Cutoff Current
at -VEB = 3 V
Collector Base Breakdown Voltage
at -IC = 1 mA
Collector Emitter Breakdown Voltage
at -IC = 1 mA
Emitter Base Breakdown Voltage
at -IE = 1 mA
Collector Emitter Saturation Voltage
at -IC = 2 A, -IB = 200 mA
Base Emitter Saturation Voltage
at -IC = 2 A, -IB = 200 mA
Current Gain Bandwidth Product
at -VCE = 5 V, -IC = 100 mA,
Output Capacitance
at -VCB = 10 V, f = 1 MHz
电话:0755-82568882
邮箱:idchip@indreamchip.com
82568883
传真:0755-82568886
网址:www.idchip.cn
A 1308
公司地址:深圳市福田区滨河大道联合广场
座
深圳市英锐芯电子科技有限公司
PNP功率晶体管 B772
SOT-89 PACKAGE OUTLINE
电话:0755-82568882
邮箱:idchip@indreamchip.com
82568883
传真:0755-82568886
网址:www.idchip.cn
A 1308
公司地址:深圳市福田区滨河大道联合广场
座
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