CI04S65E3

SiC Schottky Barrier Diode Features • • • • • • • • CI04S65E3 Package 650-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on VF Benefits • • • • • Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Applications • • • • Switch Mode Power Supplies (SMPS) Boost diodes in PFC or DC/DC stages Free Wheeling Diodes in Inverter stages AC/DC converters Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Value Unit Test Conditions VRRM Repetitive Peak Reverse Voltage 650 V VRSM Surge Peak Reverse Voltage 650 V VDC DC Blocking Voltage 650 V 13.5 6 4 A TC=25˚C TC=135˚C TC=155˚C IF Continuous Forward Current Note Fig. 3 IFRM Repetitive Peak Forward Surge Current 17 12 A TC=25˚C, tP = 10 ms, Half Sine Wave TC=110˚C, tP = 10 ms, Half Sine Wave IFSM Non-Repetitive Peak Forward Surge Current 25 19 A TC=25˚C, tp = 10 ms, Half Sine Wave TC=110˚C, tp = 10 ms, Half Sine Wave Fig. 8 IF,Max Non-Repetitive Peak Forward Surge Current 220 160 A TC=25˚C, tP = 10 µs, Pulse TC=110˚C, tP = 10 µs, Pulse Fig. 8 Power Dissipation 52 22.5 W TC=25˚C TC=110˚C Fig. 4 dV/dt Diode dV/dt ruggedness 200 V/ns VR=0-650V ∫i2dt i2t value 3.1 1.8 A2s -55 to +175 ˚C Ptot TJ , Tstg Operating Junction and Storage Temperature www.tokmas.com TC=25˚C, tP=10 ms TC=110˚C, tP=10 ms SiC Schottky Barrier Diode CI04S65E3 Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note IF = 4 A TJ=25°C IF = 4 A TJ=175°C Fig. 1 μA VR = 650 V TJ=25°C VR = 650 V TJ=175°C Fig. 2 10 nC VR = 400 V, IF = 4 A di/dt = 500 A/μs TJ = 25°C Fig. 5 231 18.5 15 pF VR = 0 V, TJ = 25°C, f = 1 MHz VR = 200 V, TJ = 25˚C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz Fig. 6 1.4 μJ VR = 400 V Fig. 7 VF Forward Voltage 1.4 1.7 1.7 2.4 V IR Reverse Current 5 10 25 100 QC Total Capacitive Charge C Total Capacitance EC Capacitance Stored Energy Note: This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol RθJC Parameter Thermal Resistance from Junction to Case Typ. Unit Note 2.9 °C/W Fig. 9 Typical Performance 100 12 TJ = -55 °C 10 Reverse LeakageICurrent, (mA) IRR (uA) 8 TJ = 75 °C TJ = 125 °C 6 4 2 0 0.0 0.5 80 TJ = 175 °C 60 TJ = 125 °C R TJ = 175 °C F Foward I Current, (A) IF (A) TJ = 25 °C 1.0 1.5 2.0 2.5 3.0 3.5 4.0 FowardVVoltage, (V) VF (V) F TJ = 75 °C 40 TJ = 25 °C 20 TJ = -55 °C 0 0 200 400 600 800 1000 (V) VR (V) ReverseVVoltage, R Figure 1. Forward Characteristics Figure 2. Reverse Characteristics www.tokmas.com 1200 SiC Schottky Barrier Diode CI04S65E3 Typical Performance 50 60 10% Duty 20% Duty 30% Duty 50% Duty 70% Duty DC 45 40 30 40 (W) PP Tot(W) TOT IF(peak) (A) IF (A) 35 50 25 20 30 20 15 10 10 5 0 25 50 75 100 125 150 0 175 25 50 75 T ˚C TCC(°C) 175 Figure 4. Power Derating 250 Conditions: TJ = 25 °C Ftest = 1 MHz Vtest = 25 mV 200 12 10 Capacitance C (pF) (pF) CapacitiveQCharge, (nC) QC (nC) C 150 C Conditions: TJ = 25 °C 14 125 ˚C TTC (°C) Figure 3. Current Derating 16 100 8 6 4 150 100 50 2 0 0 100 200 300 400 500 600 700 ReverseVVoltage, (V) VR (V) R 0 0 1 10 100 (V) VR (V) ReverseVVoltage, R Figure 5. Total Capacitance Charge vs. Reverse Voltage www.tokmas.com Figure 6. Capacitance vs. Reverse Voltage 1000 SiC Schottky Barrier Diode CI04S65E3 Typical Performance 1,000 4 3 TJ_initial = 25 °C TJ_initial = 110 °C IIFSM (A) (A) 2.5 FSM 2 C Capacitance StoredE Energy, µJ) (mJ) EC (µ 3.5 1.5 100 1 0.5 0 100 200 300 400 500 600 700 ReverseVVoltage, (V) VR (V) 1E-3 0.5 0.3 0.1 100E-3 0.05 0.02 SinglePulse 0.01 10E-3 1E-6 10E-6 10E-3 Figure 8. Non-repetitive peak forward surge current versus pulse duration (sinusoidal waveform) Figure 7. Capacitance Stored Energy 1 100E-6 tp (s) Time, tp (s) R Thermal Resistance (oC/W) Thermal Resistance (˚C/W) 0 10 10E-6 100E-6 1E-3 Time, tp (s) T (Sec) 10E-3 Figure 9. Transient Thermal Impedance www.tokmas.com 100E-3 1 SiC Schottky Barrier Diode CI04S65E3 Package Dimensions SYMBOL Package TO-252-2 Tjb June 2015 MX+DI+PSI www.tokmas.com A A1 b b2 b3 c c2 D D1 E E1 e H L L2 L3 L4 θ MILLIMETERS MIN MAX 2.159 2.413 0 0.13 0.64 0.89 0.653 1.143 5.004 5.6 0.457 0.61 0.457 0.864 5.867 6.248 5.21 6.35 7.341 4.32 4.58 BSC 9.65 10.414 1.106 1.78 0.51 BSC 0.889 1.27 0.64 1.01 0° 8°