CIM3N150

1 5 0 0 V NN -Channel MOSFET CIM3N150 General Description This Power MOSFET is produced using advanced self-aligned planar technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices can be used in various power switching circuit for system miniaturization and higher efficiency. Features 3A, 1500V, RDS(on)typ. = 5Ω@VGS = 10 V Id=1.5A Low gate charge (typical 37nC) Low reverse transfer capacitance (typical2.8pf) Fast switching 100% avalanche tested Absolute Maximum Ratings Symbol VDSS TC = 25 ℃ unless otherwise noted Parameter CIM3N150 Units 1500 V Continuous ( TC = 25 ℃ ) 3 A Continuous ( TC = 100 ℃ ) 1.8 A 12 A ±30 V Drain – Source Voltage ID Drain Current IDM Drain Current VGSS Gate – Source Voltage EAS Single Pulsed Avalanche Energy ( Note 2 ) 225 mJ Peak Diode Recovery dv/dt ( Note 3 ) 5 V/ns 32 W -55 to +150 ℃ 300 ℃ CIM3N150 3.8 40 Units ℃/W ℃/W dv/dt PD TJ,TSTG TL - Pulsed ( Note 1 ) Power Dissipation ( TC = 25 ℃ ) Operating and Storage Temperature Range Maximum lead temperature for soldering purposes 1/8” frome case for 5 seconds *Drain current limited by maximum junction temperature. Thermal characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient www.tokmas.com 1 5 0 0 V NN -Channel MOSFET CIM3N150 Electrical Characteristics TC = 25 ℃ unless otherwise noted Symbol Parameter Test Conditions Off Characteristics BVDSS Drain – Source Breakdown Voltage VGS = 0 V, ID = 250 uA ID = 250 uA, Referenced to ⊿BVDSS/ Breakdown Voltage Temperature Coefficient 25℃ ⊿TJ VDS = 1500 V, VGS = 0 V IDSS Zero Gate Voltage Drain Current VDS = 1200 V, Tc = 125 ℃ IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VGS = 0 V IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VGS = 0 V On Characteristics VGS(th) Gate Threshold Voltage ( Note 4 ) VDS = VGS, ID = 250 uA RDS(on) Static Drain-Source on-Resistance ( Note 4 ) VGS = 10 V, ID = 1.5A gFS Forward Transconductance ( Note 4 ) VDS = 30 V, ID = 1.5 A Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = Coss Output Capacitance 1.0 MHz Crss Reverse Transfer Capacitance Rg Gate resistance F= 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time VDS = 750 V, ID = 3.0 A , RG = 10Ω , VGS = 10 V (Note 4,5 ) td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge VDS = 750 V, ID = 3.0 A VGS = Qgs Gate-Source Charge 10 V (Note 4,5 ) Qgd Gate-Drain Charge Drain – Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current ISM Maximum Pulsed Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 3.0 A trr Reverse Recovery Time VGS = 0 V, IS = 3.0 A dIF/dt = 100 A/us ( Note Qrr Reverse Recovery Charge 4) Notes: 1. Repetitive Rating : Pulsed width limited by maximum junction temperature 2. L = 10.0mH , IAS = 6.7A, RG = 25Ω, Starting TJ = 25℃ 3. ISD ≤ 3.0A, di/dt ≤ 100A/us, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulsed Test : Pulsed width ≤300us, Duty cycle ≤ 2% 5. Essentially independent of operating temperature www.tokmas.com Min Typ Max Units 1500 -- -- V -- 1.5 -- V/℃ ----- ----- 25 500 100 -100 uA uA nA nA 3.0 --- -5 4.5 5.0 8 -- V Ω S ---- 1938 104 2.8 4.0 ---- pF pF pF Ω -------- 35 19 56 30 37 10 14 -------- ns ns ns ns nC nC nC ----- ---880 3 12 1.5 -- A A V ns -- 6.5 -- uC 1 5 0 0 V NN -Channel MOSFET CIM3N150 Characteristics Curve Figure 1 Maximum Forward Bias Safe Operating Area Figure 2 Maximum Power dissipation vs Case Temperature Figure 3 Maximum Continuous Drain Current vs Case Temperature Figure 4 Typical Output Characteristics Figure 5 Typical Transfer Characteristics Figure 6 Typical Body Diode Transfer Characteristics www.tokmas.com 1 5 0 0 V NN -Channel MOSFET CIM3N150 Characteristics Curve Figure 7 Typical Drain to Source ON Resistance vs Drain Current Figure 8 Typical Drian to Source on Resistance vs Junction Temperature Figure 9 Typical Theshold Voltage vs Junction Temperature Figure 10 Typical Breakdown Voltage vs Junction Temperature Figure 11 Typical Capacitance vs Drain to Source Voltage Figure 12 Typical Gate Charge vs Gate to Source Voltage www.tokmas.com 1 5 0 0 V NN -Channel MOSFET Figure 13 Maximum Effective Thermal Impedance , Junction to Case www.tokmas.com CIM3N150 1 5 0 0 V NN -Channel MOSFET Test Circuit & Waveform Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms www.tokmas.com CIM3N150 1 5 0 0 V NN -Channel MOSFET Test Circuit & Waveform Peak Diode Recovery dv/dt Test Circuit & Waveforms www.tokmas.com CIM3N150 1 5 0 0 V NN -Channel MOSFET Package Information Symbol A A1 A2 A3 b b1 b2 c e E E1 E2 H H1 H2 H3 H4 H5 G ФP www.tokmas.com 单位 mm Min Nom 5.35 5.55 2.80 3.00 1.90 2.10 1.10 1.30 0.65 0.75 1.80 2.00 1.80 2.00 0.70 0.90 5.25 5.45 15.3 15.5 9.80 10.0 3.80 4.00 24.3 24.5 9.00 9.20 15.1 15.3 18.5 19.0 1.80 2.00 4.80 5.00 4.3 4.5 3.40 3.60 CIM3N150 Max 5.75 3.20 2.30 1.50 0.85 2.20 2.20 1.10 5.65 15.7 10.2 4.20 24.7 9.40 15.5 19.5 2.20 5.20 4.7 3.80