CI06S65C3

SiC Schottky Barrier Diode CI06S65C3 Features • • • • • • • Package 650-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on VF Benefits • • • • • TO-220-2 Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway 1 2 PIN 1 CASE PIN 2 Applications • • • Switch Mode Power Supplies Power Factor Correction Motor Drives Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Note VRRM Repetitive Peak Reverse Voltage 650 V VRSM Surge Peak Reverse Voltage 650 V VDC DC Blocking Voltage 650 V Continuous Forward Current 19 9 6 A TC=25˚C TC=135˚C TC=154˚C IFRM Repetitive Peak Forward Surge Current 30 20 A TC=25˚C, tP = 10 ms, Half Sine Wave TC=110˚C, tP = 10 ms, Half Sine Wave IFSM Non-Repetitive Peak Forward Surge Current 63 49 A TC=25˚C, tp = 10 ms, Half Sine Wave TC=110˚C, tp = 10 ms, Half Sine Wave Fig. 8 IF,Max Non-Repetitive Peak Forward Surge Current 540 460 A TC=25˚C, tP = 10 µs, Pulse TC=110˚C, tP = 10 µs, Pulse Fig. 8 Ptot Power Dissipation 88 38 W TC=25˚C TC=110˚C Fig. 4 -55 to +175 ˚C 1 8.8 Nm lbf-in IF TJ , Tstg Operating Junction and Storage Temperature TO-220 Mounting Torque www.tokmas.com M3 Screw 6-32 Screw Fig. 3 SiC Schottky Barrier Diode CI06S65C3 Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note VF Forward Voltage 1.5 2.0 1.7 2.4 V IF = 6 A TJ=25°C IF = 6 A TJ=175°C Fig. 1 IR Reverse Current 8 15.5 40 160 μA VR = 650 V TJ=25°C VR = 650 V TJ=175°C Fig. 2 QC Total Capacitive Charge 15 nC VR = 400 V, IF = 6 A di/dt = 500 A/μs TJ = 25°C Fig. 5 C Total Capacitance 295 28.5 25.5 pF VR = 0 V, TJ = 25°C, f = 1 MHz VR = 200 V, TJ = 25˚C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz Fig. 6 EC Capacitance Stored Energy 2.3 μJ VR = 400 V Fig. 7 Note: This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol RθJC Parameter Thermal Resistance from Junction to Case Typ. Unit Note 1.7 °C/W Fig. 9 Typical Performance 20 14 8 6 TJ = 25 °C TJ = 75 °C TJ = 125 °C IR (mA) 10 TJ = -55 °C Reverse Leakage Current, IRR (mA) F Foward I Current, (A) IF (A) 12 TJ = 175 °C 4 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 200 400 600 800 1000 1200 3.5 4.0 FowardVVoltage, (V) VF (V) F 16 TJ = 175 °C 12 TJ = 125 °C TJ = 75 °C 8 TJ = 25 °C TJ = -55 °C 4 0 0 100 200 300 400 500 600 700 800 900 1000 ReverseVVoltage, (V) VR (V) R Figure 1. Forward Characteristics Figure 2. Reverse Characteristics www.tokmas.com SiC Schottky Barrier Diode CI06S65C3 Typical Performance 70 100 10% Duty 20% Duty 30% Duty 50% Duty 70% Duty DC 60 80 70 40 (W) PP Tot(W) TOT IF(peak) (A) IF (A) 50 90 30 60 50 40 30 20 20 10 10 0 25 50 75 100 125 150 0 175 25 50 75 T ˚C TCC(°C) 150 175 C Figure 4. Power Derating 350 Conditions: TJ = 25 °C Conditions: TJ = 25 °C Ftest = 1 MHz Vtest = 25 mV 300 20 250 Capacitance C (pF) (pF) CapacitiveQCharge, (nC) QC (nC) C 125 ˚C TTC (°C) Figure 3. Current Derating 25 100 15 10 200 150 100 5 50 0 0 100 200 300 400 500 600 700 ReverseVVoltage, (V) VR (V) R 0 0 1 10 100 (V) VR (V) ReverseVVoltage, R Figure 5. Total Capacitance Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage www.tokmas.com 1000 SiC Schottky Barrier Diode CI06S65C3 Typical Performance 1,000 6 IIFSM (A) (A) 4 FSM 3 C Capacitance StoredE Energy, µJ) (mJ) EC (µ 5 100 TJ_initial = 25 °C TJ_initial = 110 °C 2 1 0 100 200 300 400 500 600 700 ReverseVVoltage, (V) VR (V) 1E-3 Figure 8. Non-repetitive peak forward surge current versus pulse duration (sinusoidal waveform) Figure 7. Capacitance Stored Energy 1 100E-6 tp (s) Time, tp (s) R Thermal Resistance (oC/W) Thermal Resistance (˚C/W) 0 10 10E-6 0.5 0.3 0.1 100E-3 0.05 0.02 SinglePulse 10E-3 0.01 1E-3 1E-6 10E-6 100E-6 1E-3 Time, tp (s) T (Sec) 10E-3 Figure 9. Transient Thermal Impedance www.tokmas.com 100E-3 1 10E-3 SiC Schottky Barrier Diode CI06S65C3 Package Dimensions Package TO-220-2 POS PIN 1 PIN 2 CASE Inches Millimeters Min Max Min Max A .381 .410 9.677 10.414 B .235 .255 5.969 6.477 C .100 .120 2.540 3.048 D .223 .337 5.664 8.560 D1 .457-.490 11.60-12.45 typ D2 .277-.303 typ 7.04-7.70 typ D3 .244-.252 typ 6.22-6.4 typ E .590 .615 14.986 15.621 E1 .302 .326 7.68 8.28 E2 .227 251 5.77 6.37 F .143 .153 3.632 3.886 G 1.105 1.147 28.067 29.134 H .500 .550 12.700 13.970 L .025 .036 .635 .914 M .045 .055 1.143 1.550 N .195 .205 4.953 5.207 P .165 .185 4.191 4.699 Q .048 .054 1.219 1.372 S 3° 6° 3° 6° T 3° 6° 3° 6° U 3° 6° 3° 6° V .094 .110 2.388 2.794 W .014 .025 .356 .635 X 3° 5.5° 3° 5.5° Y .385 .410 9.779 10.414 z .130 .150 3.302 3.810 NOTE: 1. Dimension L, M, W apply for Solder Dip Finish www.tokmas.com