ESD5641D10-3/TR

ESD5641DXX ESD5641DXX 1-Line, Uni-directional, Transient Voltage Suppressor http//:www.sh-willsemi.com Descriptions The ESD5641DXX is a transient voltage suppressor 3 1 and 2 designed to protect power interfaces. It is suitable to replace multiple discrete components in portable electronics. The ESD5641DXX is specifically designed to protect USB Circuit diagram port. TVS diode with higher surge capability is used to protect USB voltage bus pin. The ESD5641DXX is available in DFN2×2-3L package. PIN3 Standard products are Pb-free and Halogen-free. 3 Features  Reverse stand-off voltage: 7.5V ~ 15V  Surge protection according to IEC61000-4-5 8/20μs waveform: IPPM see Table 4 Surge protection according to IEC61643-321 10/1000μs waveform: IPPM see Table 4  Low clamping voltage  Solid-state silicon technology 1 2 PIN1 PIN2 Pin configuration (Top View) Applications  Power supply protection  Power management 5641 **YW Order information Table 1. Device Device Package Shipping ESD5641D07-3/TR DFN2×2-3L 3000/Tape&Reel 07 ESD5641D10-3/TR DFN2×2-3L 3000/Tape&Reel 10 ESD5641D12-3/TR DFN2×2-3L 3000/Tape&Reel 12 5641 = Series code ESD5641D15-3/TR DFN2×2-3L 3000/Tape&Reel 15 ** = Device code YW = Date code code Pin1 Indicator Marking Will Semiconductor Ltd. 1 Revision 1.5, 2017/12/11 ESD5641DXX Absolute maximum ratings Table 2. Parameter Peak pulse power (tp=8/20μs) 1)3) Peak pulse power (tp=10/1000μs) 2)3) ESD according to IEC61000-4-2 air discharge Symbol Rating Unit PPK 4000 W PPK 350 W ±30 VESD ESD according to IEC61000-4-2 contact discharge Junction temperature ±30 TJ Operating temperature TOP Lead temperature TL Storage temperature TSTG kV 125 o -40~85 o 260 o -55~150 o C C C C Notes: 1) Non-repetitive current pulse, according to IEC61000-4-5.（8/20μs current waveform） 2) Non-repetitive current pulse, according to IEC61643-321.（10/1000μs current waveform） 3) Measured from pin 3 to pin 1 and pin 2. Electrical characteristics (TA = 25oC, unless otherwise noted) I IPP VF Forward voltage VRWM Reverse stand-off voltage IF Forward current IR Reverse leakage current VFC Forward clamping voltage VBR Reverse breakdown voltage IPP Peak pulse current VCL Clamping voltage IPP Peak pulse current VFC VF IBR IR VRWM VBR VCL V IF IPP Definitions of electrical characteristics Will Semiconductor Ltd. 2 Revision 1.5, 2017/12/11 ESD5641DXX o Electrical characteristics (TA = 25 C, unless otherwise noted) Table 3. Reverse Type number Standoff Breakdown voltage Voltage VBR(V) IBR = 1mA Reverse leakage current IRM(nA) at VRWM VRWM (V) Junction Forward voltage capacitance VF(V) IF = 20mA F=1MHz, VR=0V (pF) Max. Min. Typ. Max. Typ. Max. Min. Max. Typ. Max. ESD5641D07 7.5 8.0 9.0 10.0 10 1000 0.45 1.25 2200 3000 ESD5641D10 10.0 11.5 13.5 15.5 1 500 0.45 1.25 1500 2000 ESD5641D12 12.0 13.0 15.0 17.0 1 100 0.45 1.25 1200 1800 ESD5641D15 15.0 16.0 17.5 19.0 1 100 0.45 1.25 1000 1500 Table 4. Rated peak pulse Clamping voltage Rated peak pulse Clamping voltage current IPP （A）1)3) VCL(V) at IPP（A）1)3) current IPP（A）2)3) VCL(V) at IPP（A）2)3) Max. Max. Max. Max. ESD5641D07 190 18 28 13 ESD5641D10 170 23 22 18 ESD5641D12 150 27 16 20 ESD5641D15 130 30 13 25 Type number Notes: 1) Non-repetitive current pulse, according to IEC61000-4-5. (8/20μs current waveform) 2) Non-repetitive current pulse, according to IEC61643-321. (10/1000μs current waveform) 3) Measured from pin 3 to pin 1 and pin 2. Will Semiconductor Ltd. 3 Revision 1.5, 2017/12/11 ESD5641DXX o Typical characteristics (TA = 25 C, unless otherwise noted) Front time: T1= 1.25 T = 8s Time to half-value: T2= 20s Peak pulse current (%) Peak pulse current (%) 100 90 50 T2 10 0 0 20 T Front time: T1= 1.25 T = 10s 100 90 Time to half-value: T2= 1000s 50 T2 10 0 0 T Time (s) T1 8/20μs waveform per IEC61000-4-5 10/1000μs waveform per IEC61643-321 30 30 Pulse waveform:tp=8/20μs Pulse waveform:tp=10/1000μs ESD5641D07 ESD5641D10 ESD5641D12 ESD5641D15 Vc-Clamping Voltage (V) Vc-Clamping Voltage (V) 1000 Time (s) T1 25 20 15 ESD5641D07 ESD5641D10 ESD5641D12 ESD5641D15 25 20 15 10 10 5 0 50 100 150 5 200 0 5 Ipp-Peak Pulse Current (A) 10 15 20 25 30 Ipp-Peak Pulse Current (A) Clamping voltage vs. Peak pulse current Clamping voltage vs. Peak pulse current Peak pulse power (W) 100 % of Rated power 10000 1000 100 1 10 100 Pulse time (s) 60 40 20 0 1000 0 25 50 75 100 125 150 o TA - Ambient temperature ( C) Non-repetitive peak pulse power vs. Pulse time Will Semiconductor Ltd. 80 Power derating vs. Ambient temperature 4 Revision 1.5, 2017/12/11 ESD5641DXX Package outline dimensions DFN2×2-3L  Symbol Dimensions In Millimeters Min. Typ. Max. A 0.50 0.58 0.65 A1 0.00 0.02 0.05 A3 Recommended land pattern (Unit: mm) 0.50 1.30 1.10 1.05 0.40 0.10 REF. b 0.25 0.30 0.35 D 1.90 2.00 2.10 E 1.90 2.00 2.10 D2 0.95 1.05 1.15 E2 1.40 1.50 1.60 e 1.20 1.30 1.40 H 0.20 0.25 0.30 K 0.20 0.30 0.40 L 0.33 0.39 0.45 R 0.13 - - Notes: This recommended land pattern is for reference purposes only. Please consult your manufacturing 1.60 Will Semiconductor Ltd. 0.25 0.40 group to ensure your PCB design guidelines are met. 5 Revision 1.5, 2017/12/11 ESD5641DXX TAPE AND REEL INFORMATION RD Reel Dimensions Tape Dimensions W P1 Quadrant Assignments For PIN1 Orientation In Tape Q1 Q2 Q1 Q2 Q3 Q4 Q3 Q4 User Direction of Feed RD Reel Dimension 7inch 13inch W Overall width of the carrier tape 8mm 12mm P Pitch between successive cavity centers 2mm 4mm 8mm Pin1 Quadrant Q1 Q2 Q3 Pin1 Will Semiconductor Ltd. 6 Q4 Revision 1.5, 2017/12/11