ESD63091CN-2/TR

ESD63091CN ESD63091CN http//:www.sh-willsemi.com 1-Line, Bi-directional, Low Capacitance Transient Voltage Suppressor Descriptions The ESD63091CN is an ultra-low capacitance TVS (Transient Voltage Suppressor) designed to protect high speed data interfaces. It has been specifically designed to DWN1006-2L (Bottom View) protect sensitive electronic components which are connected to data and transmission lines from over-stress caused by ESD (Electrostatic Discharge). The ESD63091CN incorporates one pair of ultra-low Pin1 Pin2 capacitance diodes. The ESD63091CN may be used to provide ESD protection up to ±30kV (contact discharge) according to IEC61000-4-2, and withstand peak pulse current up to 14A (8/20μs) Circuit diagram according to IEC61000-4-5. The ESD63091CN is available in DWN1006-2L package. Standard products are Pb-free and Halogen-free. H Features  Stand-off voltage: ±15.0V Max.  Transient protection for each line according to H= Device code IEC61000-4-2 (ESD): ±30kV (contact discharge) Marking (Top View) : ±30kV (air discharge) Order information IEC61000-4-5 (surge): 14A (8/20μs)  Low capacitance: CJ = 1.1pF typ.  Low clamping voltage: VCL = 19V typ. @ IPP = 16A (TLP)  Solid-state silicon technology Device Package Shipping ESD63091CN-2/TR DWN1006-2L 10000/Tape&Reel Applications  Cellular handsets  Tablets  Laptops  Other portable devices  Network communication devices Will Semiconductor Ltd. 1 Revision 1.0, 2020/03/30 ESD63091CN Absolute maximum ratings Parameter Symbol Rating Unit Peak pulse power (tp = 8/20μs) Ppk 294 W Peak pulse current (tp = 8/20μs) IPP 14 A ESD according to IEC61000-4-2 air discharge ±30 VESD ESD according to IEC61000-4-2 contact discharge kV ±30 TJ 125 oC Operating temperature TOP -40~85 oC Lead temperature TL 260 oC TSTG -55~150 oC Junction temperature Storage temperature Electrical characteristics (TA=25 oC, unless otherwise noted) Parameter Symbol Reverse maximum working voltage VRWM Reverse leakage current Reverse breakdown voltage Reverse Holding Voltage Clamping voltage 1) Dynamic resistance 1) IR VBR VCL IT = 1mA Clamping voltage 3) VCL CJ Typ. 16 17.5 Max. Unit ±15.0 V 1 µA 19 V 12.5 IPP = 16A, tp = 100ns RDYN VCL Min. VRWM = 15.0V VHOLD Clamping voltage 2) Junction capacitance Condition VESD = 8kV V 19 V 0.27 Ω 22 V IPP = 1A, tp = 8/20μs 16 V IPP = 14A, tp = 8/20μs 21 V 1.30 pF VR = 0V, f = 1MHz 1.10 Notes: 1) TLP parameter: Z0 = 50Ω, tp = 100ns, tr = 2ns, averaging window from 60ns to 80ns. RDYN is calculated from 4A to 16A. 2) Contact discharge mode, according to IEC61000-4-2. 3) Non-repetitive current pulse, according to IEC61000-4-5. Will Semiconductor Ltd. 2 Revision 1.0, 2020/03/30 ESD63091CN 100 90 Front time: T1= 1.25 T = 8μs 100 90 Time to half-value: T2= 20μs Current (%) Peak pulse current (%) Typical characteristics (TA=25oC, unless otherwise noted) 50 T2 10 10 0 0 T 5 10 T1 15 Time (μs) 20 25 tr = 0.7~1ns CJ - Junction capacitance (pF) VC - Clamping voltage (V) 20 Pulse waveform: tp = 8/20s 18 17 16 15 14 2 4 6 8 10 12 Time (ns) Contact discharge current waveform per IEC61000-4-2 8/20μs waveform per IEC61000-4-5 19 t 60ns 30ns 30 1.15 1.10 1.05 1.00 0.95 14 f = 1MHz VAC = 50mV 0 1 2 IPP - Peak pulse current (A) 3 4 5 6 7 8 9 10 VR - Reverse voltage (V) Clamping voltage vs. Peak pulse current Capacitance vs. Reverse voltage 1000 % of Rated power Peak pulse power (W) 100 100 10 80 60 40 20 0 1 10 100 Pulse time (s) 1000 25 50 75 100 125 150 o TA - Ambient temperature ( C) Non-repetitive peak pulse power vs. Pulse time Will Semiconductor Ltd. 0 Power derating vs. Ambient temperature 3 Revision 1.0, 2020/03/30 ESD63091CN Typical characteristics (TA = 25 oC, unless otherwise noted) 10V/div 10V/div 20ns/div 20ns/div ESD clamping ESD clamping (+8kV contact discharge per IEC61000-4-2) 20 TLP current (A) 15 10 (-8kV contact discharge per IEC61000 Z0 = 50 tr = 2ns tp = 100ns 5 0 -5 -10 -15 -20 -20 -15 -10 -5 0 5 10 15 20 TLP voltage (V) TLP Measurement Will Semiconductor Ltd. 4 Revision 1.0, 2020/03/30 ESD63091CN PACKAGE OUTLINE DIMENSIONS DWN1006-2L W E H S e TOP VIEW BOTTOM VIEW A D SIDE VIEW Symbol Dimensions in Millimeters Min. Typ. Max. A 0.29 - 0.34 D 0.97 1.00 1.03 E 0.57 0.60 0.63 W 0.25 Ref. H 0.50 Ref. S 0.05 Ref. e 0.65 BSC Will Semiconductor Ltd. 5 Revision 1.0, 2020/03/30 ESD63091CN TAPE AND REEL INFORMATION Reel Dimensions RD Reel Dimensions W Tape Dimensions P1 Quadrant Assignments For PIN1 Orientation In Tape Q1 Q2 Q1 Q2 Q3 Q4 Q3 Q4 User Direction of Feed RD Reel Dimension 7inch 13inch W Overall width of the carrier tape 8mm 12mm P1 Pitch between successive cavity centers 2mm 4mm 8mm Pin1 Quadrant Q1 Q2 Q3 Pin1 Will Semiconductor Ltd. 6 Q4 Revision 1.0, 2020/03/30