ESD5611N-2/TR

ESD5611N ESD5611N 1-Line, Bi-directional, Transient Voltage Suppressors http//:www.sh-willsemi.com Descriptions The ESD5611N is a TVS (Transient Voltage Suppressor) designed to protect sensitive electronic components which are connected to data and power lines from over-stress caused by ESD (Electrostatic Discharge), EFT (Electrical Fast Transients) and lightning. DFN1006-2L The ESD5611N may be used to provide ESD protection up to ±30kV (contact discharge) according to IEC61000-4-2, and withstand peak pulse current up to 25A (8/20μs) according to IEC61000-4-5. Pin1 Pin2 The ESD5611N is available in DFN1006-2L package. Standard products are Pb-free and Halogen-free. Circuit diagram Features  Stand-off voltage: ±5.0V Max.  Transient protection for each line according to Pin1 IEC61000-4-2 (ESD): ±30kV (contact discharge) IEC61000-4-5 (surge): 25A (8/20μs)  Capacitance: CJ = 65pF typ.  Low clamping voltage  Low leakage current  Solid-state silicon technology Computers and peripherals  Cellular handsets  Portable Electronics  Notebooks  Camera Will Semiconductor Ltd. Pin2 N = Device code * = Month code (A~Z) Marking (Top View) Applications  *N Order information Device Package Shipping ESD5611N-2/TR DFN1006-2L 10000/Tape&Reel 1 Revision 1.5 2018/12/29 ESD5611N Absolute maximum ratings Parameter Symbol Rating Unit Peak pulse power (tp = 8/20μs) Ppk 275 W Peak pulse current (tp = 8/20μs) IPP 25 A ESD according to IEC61000-4-2 air discharge VESD ESD according to IEC61000-4-2 contact discharge Junction temperature TJ Operating temperature TOP Lead temperature TL Storage temperature TSTG ±30 kV ±30 125 o -40~85 o 260 o -55~150 o C C C C Electrical characteristics (TA=25 oC, unless otherwise noted) I VRWM Reverse stand-off voltage IR Reverse leakage current VCL Clamping voltage IPP Peak pulse current IPP IHOLD VCL VTRIG VHOLD VBR VRWM IBR ITRIG IR IR ITRIG IBR VRWM VBR VHOLD VTRIG VCL V IHOLD VTRIG Reverse trigger voltage ITRIG Reverse trigger current VBR Reverse breakdown voltage IBR Reverse breakdown current VHOLD Reverse holding voltage IPP IHOLD Reverse holding current Definitions of electrical characteristics Will Semiconductor Ltd. 2 Revision 1.5 2018/12/29 ESD5611N o Electrical characteristics (TA = 25 C, unless otherwise noted) Parameter Symbol Condition Min. Typ. Max. Unit ±5 V 50 nA Reverse stand-off voltage VRWM Reverse leakage current IR VRWM = 5V VBR IBR = 1mA 5.2 V IHOLD = 50mA 5.2 V Reverse breakdown voltage Reverse holding voltage VHOLD