ESD5452E-3/TR

ESD5452E ESD5452E 2-Lines, Bi-directional, Transient Voltage Suppressors http//:www.sh-willsemi.com Descriptions The ESD5452E is a bi-directional TVS (Transient Voltage Suppressor). It is specifically designed to protect sensitive electronic components which are connected to low speed data lines and control lines from over-stress caused by ESD (Electrostatic Discharge), EFT (Electrical Fast Transients) and Lightning. SOT-23 (Bottom View) GND The ESD5452E may be used to provide ESD protection up to ±30kV (contact and air discharge) according 3 to IEC61000-4-2, and withstand peak pulse current up to 8A (8/20μs) according to IEC61000-4-5. The ESD5452E is available in SOT-23 package. Standard products are Pb-free and Halogen-free. Reverse stand-off voltage: ±5V Max  Transient protection for each line according to 2 I/O1 I/O2 Circuit diagram Features  1 GND 3 IEC61000-4-2 (ESD): ±30kV (contact and air discharge) IEC61000-4-4 (EFT): 40A (5/50ns) TAYW IEC61000-4-5 (surge): 8A (8/20μs)  Capacitance: CJ = 17.5pF typ.  Low leakage current: IR < 1nA typ.  Low clamping voltage: VCL = 9V typ. @ IPP = 16A (TLP)  Solid-state silicon technology Cellular handsets  Tablets  Laptops  Other portable devices  Network communication devices Will Semiconductor Ltd. 2 I/O2 TA =Device code YW= Data code Applications  1 I/O1 Marking (Top View) Order information 1 Device Package Shipping ESD5452E-3/TR SOT-23 3000/Tape&Reel Revision 1.0, 2014/08/011 ESD5452E Absolute maximum ratings Parameter Symbol Rating Unit Peak pulse power (tp = 8/20μs) Ppk 80 W Peak pulse current (tp = 8/20μs) IPP 8 A ESD according to IEC61000-4-2 air discharge VESD ESD according to IEC61000-4-2 contact discharge Operation temperature TOP Storage temperature TSTG Lead temperature TL Storage temperature TSTG ±30 kV ±30 -40 to 85 o -55 to 150 o 260 o -55~150 o C C C C Electrical characteristics (TA=25 oC, unless otherwise noted) I VRWM Reverse stand-off voltage IR Reverse leakage current VCL Clamping voltage IPP Peak pulse current IPP IHOLD VCL VTRIG VHOLD VBR VRWM IBR ITRIG IR IR ITRIG IBR VRWM VBR VHOLD VTRIG VCL V IHOLD VTRIG Reverse trigger voltage ITRIG Reverse trigger current VBR Reverse breakdown voltage IBR Reverse breakdown current VHOLD Reverse holding voltage IPP IHOLD Reverse holding current Definitions of electrical characteristics Will Semiconductor Ltd. 2 Revision 1.0, 2014/08/011 ESD5452E o Electrical characteristics (TA=25 C, unless otherwise noted) Parameter Symbol Condition Min. Typ. Max. Unit ±5 V 100 nA Reverse stand-off voltage VRWM Reverse leakage current IR VRWM = 5V VBR IBR = 1mA 5.1 V IHOLD = 50mA 5.1 V Reverse breakdown voltage Reverse holding voltage VHOLD