ESD9NS5V-3/TR

ESD9NS5V ESD9NS5V 2-Lines, Bi-directional, Transient Voltage Suppressors http//:www.sh-willsemi.com Descriptions The ESD9NS5V is a transient voltage suppressors (TVS) which provide a very high level protection for sensitive electronic components that may be subjected DFN1006-3L to electrostatic discharge (ESD). It is designed to replace multilayer varistors (MLV) in consumer equipment 3 applications such as mobile phone, notebook, PDA, STB, 2 LCD TV etc. 1 The ESD9NS5V was past ESD transient voltage up to ±30kV (contact) according to IEC61000-4-2 and withstand peak current up to 9A for 8/20μs pulse according to Pin configuration (Top view) IEC61000-4-5. The ESD9NS5V is available in DFN1006-3L package. Standard products are Pb-free and Halogen-free. S* Features DFN1006-3L  Reverse stand-off voltage : 5V  Peak current (tp=8/20µs) : 9A  Transient protection IEC61000-4-2, Level 4 S = Device code * = Month code (A~Z) Marking : ±30kV air : ±30kV contact  Low clamping voltage  Low leakage current  Small package Order information Device ESD9NS5V-3/TR Package Shipping DFN1006-3L 10000/Tape&Reel Applications  Cell phone  PMP  MID  PDA  Digital camera  Other electronic equipment Will Semiconductor Ltd. 1 Revision 2.0, 2016/07/20 ESD9NS5V Absolute maximum ratings Parameter Symbol Peak pulse power (tp=8/20μs) (pin1 or pin3 to pin2) Ppk Peak pulse power (tp=8/20μs) (pin2 to pin1 or pin3) Peak pulse current (tp=8/20μs) Ipp ESD voltage IEC61000-4-2 air VESD ESD voltage IEC61000-4-2 contact Junction temperature Storage temperature 100 W 150 W 9 A ±30 kV ±30 o -40~85 o TL 260 o TSTG -55~150 o TOP Lead temperature Unit 125 TJ Operating temperature Rating C C C C Electrical characteristics (TA = 25oC, unless otherwise noted) I VRWM Reverse stand-off voltage IR Reverse leakage current VCL Clamping voltage IPP Peak pulse current IPP IHOLD VHOLD VCL VTRIG VRWM ITRIG IR IR ITRIG VRWM VTRIG VHOLD VCL V IHOLD VTRIG Reverse trigger voltage ITRIG Reverse trigger current VHOLD Reverse holding voltage IHOLD IPP Reverse holding current Definitions of electrical characteristics Will Semiconductor Ltd. 2 Revision 2.0, 2016/07/20 ESD9NS5V o Electrical characteristics (Ta=25 C, unless otherwise noted) Parameter Symbol Condition Min. Typ. Max. Unit 5.0 V Reverse stand-off voltage VRWM Reverse leakage current IR VRWM=5V 1 µA VBR IBR=1mA 9.5 V Reverse breakdown voltage IPP = 16A, tp = 100ns Clamping voltage 1) VCL pin1 or pin3 to pin2 IPP = 16A, tp = 100ns pin2 to pin1 or pin3 VESD = 8kV Clamping voltage 2) VCL pin1 or pin3 to pin2 VESD = 8kV pin2 to pin1 or pin3 6 V 11 V 10 V 15 V Ipp=1A, tp = 8/20μs Clamping voltage 3) VC pin1 or pin3 to pin2 Ipp=9A, tp = 8/20μs pin1 or pin3 to pin2 Ipp=1A, tp = 8/20μs Clamping voltage 3) VC pin2 to pin1 or pin3 Ipp=9A, tp = 8/20μs pin2 to pin1 or pin3 Dynamic resistance 1) Junction capacitance 7 V 11 V 11 V 17 V pin1 or pin3 to pin2 0.05 Ω pin2 to pin1 or pin3 0.11 Ω RDYN CJ f=1MHz, VR=0V 24 30 pF Notes: 1) TLP parameter: Z0 = 50Ω, tp = 100ns, tr = 2ns, averaging window from 60ns to 80ns. RDYN is calculated from 4A to 16A. 2) Contact discharge mode, according to IEC61000-4-2. 3) Non-repetitive current pulse, according to IEC61000-4-5. Will Semiconductor Ltd. 3 Revision 2.0, 2016/07/20 ESD9NS5V o 100 90 Front time: T1= 1.25 T = 8s 100 90 Time to half-value: T2= 20s Current (%) Peak pulse current (%) Typical characteristics (TA=25 C, unless otherwise noted) 50 T2 10 10 0 0 tr = 0.7~1ns Time (s) T1 Pulse waveform: tp=8/20μs VC - Clamping voltage (V) 16 14 pin2 to pin1 or pin3 12 10 8 Time (ns) Contact discharge current waveform per IEC61000-4-2 C - Junction capacitance (pF) 8/20μs waveform per IEC61000-4-5 t 60ns 30ns 20 T pin1 or pin3 to pin2 30 f =1MHz VAC =50mV 25 20 15 6 0 2 4 6 8 10 10 -4 -2 0 2 4 VR - Reverse voltage (V) Ipp - Peak pulse current (A) Clamping voltage vs. Peak pulse current Capacitance vs. Reverse voltage 1000 % of Rated power Peak pulse power (W) 100 100 80 60 40 20 10 0 1 10 100 Pulse time (s) 1000 25 50 75 100 125 150 o TA - Ambient temperature ( C) Non-repetitive peak pulse power vs. Pulse time Will Semiconductor Ltd. 0 Power derating vs. Ambient temperature 4 Revision 2.0, 2016/07/20 ESD9NS5V o Typical characteristics (TA=25 C, unless otherwise noted) 10V/div 10V/div 20ns/div 20ns/div ESD clamping ESD clamping (+8kV contact discharge per IEC61000-4-2) (-8kV contact discharge per IEC61000-4-2) TLP current (A) 20 10 pin2 to pin1 or pin3 0 pin1 or pin3 to pin2 -10 Z0 = 50 tr = 2ns -20 tp = 100ns -12 -10 -8 -6 -4 -2 0 2 4 6 8 TLP voltage (V) TLP Measurement Will Semiconductor Ltd. 5 Revision 2.0, 2016/07/20 ESD9NS5V P PACKAGE OUTLINE DIMENSIONS DFN1006-3L L L1 L b1 E b2 e1 D e2 (Ⅰ ) Top View Bottom View (Ⅱ ) A A1 (Ⅱ ) (Ⅰ ) Side View Dimensions in Millimeters Symbol Min. Typ. Max. A 0.36 - 0.50 A1 0.00 - 0.05 D 0.95 1.00 1.05 E 0.55 0.60 0.65 b1 0.10 0.15 0.20 b2 0.40 0.50 0.60 L 0.20 0.25 0.30 L1 0.20 0.30 0.40 e1 0.35 BSC e2 0.65 BSC Recommend PCB Layout (Unit: mm) 0.45 0.20 0.70 0.25 0.45 Notes: This recommended land pattern is for reference purposes only. Please consult your manufacturing 0.25 Will Semiconductor Ltd. group to ensure your PCB design guidelines are met. 6 Revision 2.0, 2016/07/20 TAPE AND REEL INFORMATION RD Reel Dimensions W Tape Dimensions P1 Quadrant Assignments For PIN1 Orientation In Tape Q1 Q2 Q1 Q2 Q3 Q4 Q3 Q4 RD Reel Dimension W Overall width of the carrier tape P1 Pitch between successive cavity centers Pin1 Pin1 Quadrant Will Semiconductor Ltd. User Direction of Feed 7inch 13inch 1 8mm 12mm 16mm 2mm 4mm 8mm Q1 Q2 Q3 7 Q4 Revision 2.0, 2016/07/20