ESD56281N06-2/TR

ESD56281NXX ESD56281NXX http//:www.sh-willsemi.com 1-Line, Uni-directional, Transient Voltage Suppressor Descriptions The ESD56281NXX is a transient voltage suppressor designed to protect power interfaces. It is suitable to replace multiple discrete components in portable electronics. The ESD56281NXX is specifically designed to protect USB port and power lines. DFN1006-2L (Bottom View) The ESD56281NXX is available in DFN1006-2L package. Standard products are Pb-free and Halogen-free. Pin1 Features  Reverse stand-off voltage: 4.85V ~ 6.3V  Surge protection according to IEC61000-4-5 Circuit diagram see Table 4  Pin2 ESD protection according to IEC61000-4-2 ±30kV (contact and air discharge)  Low clamping voltage  Solid-state silicon technology Pin1 x* Pin2 Applications  Cell phone handsets and accessories  Power supply protection  Power management __ X = Device code（Y,Z ,Q） * = Month code (A~Z) Marking (Top View) Order information Table 1. Device Package Shipping Marking ESD56281N04-2/TR DFN1006-2L 10000/Tape&Reel Y* ESD56281N05-2/TR DFN1006-2L 10000/Tape&Reel Z* ESD56281N06-2/TR DFN1006-2L 10000/Tape&Reel Q* Will Semiconductor Ltd. 1 __ Revision 1.1, 2021/01/19 ESD56281NXX Absolute maximum ratings Table 2. Parameter Peak pulse power (tp=8/20μs) ESD according to IEC61000-4-2 air discharge Symbol Rating Unit Ppk 350 W ±30 VESD ESD according to IEC61000-4-2 contact discharge ±30 kV TJ 125 oC Operating temperature TOP -40~85 oC Lead temperature TL 260 oC TSTG -55~150 oC Junction temperature Storage temperature Electrical characteristics (TA = 25oC, unless otherwise noted) I VRWM Reverse stand-off voltage IPP IR Reverse leakage current VF Forward voltage VBR Reverse breakdown voltage IF Forward current IBR Reverse breakdown current VFC Forward clamping voltage VCL Clamping voltage IPP Peak pulse current VTRIG Reverse trigger voltage ITRIG IHOLD VFC VF IBR Reverse trigger current VHOLD Reverse holding voltage ITRIG IR IHOLD VRWM VBR Reverse holding current VTRIG V VCL VHOLD IF IPP Definitions of electrical characteristics Will Semiconductor Ltd. 2 Revision 1.1, 2021/01/19 ESD56281NXX Electrical characteristics (TA = 25oC, unless otherwise noted) Table 3. Reverse Stand off Type number Breakdown voltage Voltage VBR(V) IBR = 1mA VRWM (V) Reverse leakage current IRM(nA) at VRWM Junction Forward voltage capacitance VF(V) IF = 20mA F=1MHz, VR=0V (pF) Max. Min. Typ. Max. Typ. Max. Min. Max. Typ. Max. ESD56281N04 4.85 5.0 5.5 6.0 1 100 0.5 1.1 170 180 ESD56281N05 5.5 5.6 6.4 7.5 1 100 0.5 1.1 160 170 ESD56281N06 6.3 6.5 7.5 9.0 1 100 0.5 1.1 90 100 Table 4. Type number Rated peak pulse current IPP （A）1)3) Clamping voltage Clamping voltage Clamping voltage Typ. VCL(V) at IPP（A） Typ. VCL(V) at IPP = Typ. VCL(V) at 2)3) VESD = 8kV 2)3) 1)3) 16A, tp = 100ns ESD56281N04 42 8.2 6.0 7.5 ESD56281N05 40 8.8 6.6 8.0 ESD56281N06 35 9.0 6.6 8.0 Notes: 1) Non-repetitive current pulse, according to IEC61000-4-5.（8/20μs current waveform） 2) Non-repetitive current pulse, according to IEC61000-4-2. 3) Measured from pin 1 to pin 2. Will Semiconductor Ltd. 3 Revision 1.1, 2021/01/19 ESD56281NXX 100 90 Front time: T1= 1.25 T = 8s 100 90 Time to half-value: T2= 20s Current (%) Peak pulse current (%) Typical characteristics (TA = 25oC, unless otherwise noted) 50 T2 10 10 0 0 T5 10 T1 15 Time (s) 20 25 30 Time (ns) Contact discharge current waveform per IEC61000-4-2 8/20μs waveform per IEC61000-4-5 Pulse waveform:tp=8/20μS CJ - Junction capacitance (pF) Vc-Clamping Voltage (V) 9.5 9.0 8.5 8.0 7.5 7.0 6.5 6.0 ESD56281N04 ESD56281N05 ESD56281N06 5.5 5.0 0 5 10 15 20 25 t 60ns 30ns tr = 0.7~1ns 30 35 40 180 f = 1MHz VAC = 50mV 160 140 120 ESD56281N04 100 ESD56281N05 80 60 45 ESD56281N06 0 1 Ipp-Peak Pulse Current (A) Clamping voltage vs. Peak pulse current 2 3 4 5 6 7 VR - Reverse voltage (V) Capacitance vs. Reverse voltage 100 % of Rated power Peak pulse power (W) 1000 100 80 60 40 20 1 10 100 Pulse time (s) 0 1000 25 50 75 100 125 150 o TA - Ambient temperature ( C) Non-repetitive peak pulse power vs. Pulse time Will Semiconductor Ltd. 0 Power derating vs. Ambient temperature 4 Revision 1.1, 2021/01/19 ESD56281NXX Typical characteristics (TA = 25oC, unless otherwise noted) 20 TLP current (A) 16 12 8 Z0 = 50 tr = 2ns tp = 100ns 4 0 -4 -8 -12 ESD56281N04 ESD56281N05 ESD56281N06 -16 -20 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 10 TLP voltage (V) TLP Measurement Will Semiconductor Ltd. 5 Revision 1.1, 2021/01/19 PACKAGE OUTLINE DIMENSIONS DFN1006-2L b CATHODE MARKING (Ⅰ) L E (Ⅱ) D e Top View Bottom View (Ⅲ) (Ⅰ) A (Ⅱ) A3 A1 Side View Dimensions in Millimeters Symbol Min. Typ. Max. A 0.340 0.450 0.530 A1 0.000 0.020 0.050 A3 0.125 Ref. D 0.950 1.000 1.075 E 0.550 0.600 0.675 b 0.200 0.250 0.300 L 0.450 0.500 0.550 e 0.650 BSC Recommended PCB Layout (Unit: mm) 0.55 0.60 0.30 Notes: This recommended land pattern is for reference 0.85 1.40 Will Semiconductor Ltd. purposes only. Please consult your manufacturing group to ensure your PCB design guidelines are met. 6 Revision 1.1, 2021/01/19 TAPE AND REEL INFORMATION Reel Dimensions RD Reel Dimensions W Tape Dimensions P1 Quadrant Assignments For PIN1 Orientation In Tape Q1 Q2 Q1 Q2 Q3 Q4 Q3 Q4 User Direction of Feed RD Reel Dimension 7inch 13inch W Overall width of the carrier tape 8mm 12mm P1 Pitch between successive cavity centers 2mm 4mm 8mm Pin1 Quadrant Q1 Q2 Q3 Pin1 Will Semiconductor Ltd. 7 Q4 Revision 1.1, 2021/01/19