ESD9X5V-2/TR

ESD9X5V ESD9X5V 1-Line, Uni-directional, Transient Voltage Suppressor http//:www.sh-willsemi.com Descriptions The ESD9X5V is a Uni-directional TVS (Transient Voltage Suppressor) designed to protect sensitive electronic components from damage due to ESD (Electrostatic Discharge), EFT (Electrical Fast Transients) and CDE FBP-02C (Bottom view) (Cable Discharge Event). The ESD9X5V has been specifically designed to replace MLV (Multilayer Varistor) in portable application such as cellular handsets, notebook computers, tablets and PADs. Pin1 Pin2 The ESD9X5V is based on solid-state silicon technology and offer unique electrical characteristics like lower clamping voltage and no device degrading compared to Circuit diagram MLV. The ESD9X5V may be used to provide ESD protection up to ±30kV (contact discharge) according to IEC61000-4-2, and withstand peak pulse current up to 11A (8/20μs) *H Pin1 according to IEC61000-4-5. Pin2 The ESD9X5V is available in FBP-02C package. Standard * = Month (A~Z) products are Pb-free and Halogen-free. H = Device code Marking (Top View) Features  Stand-off voltage: 5V Max.  Transient protection for each line according to Order information IEC61000-4-2 (ESD): ±30kV (contact discharge) IEC61000-4-5 (surge): 11A (8/20μs)  Capacitance: CJ = 60pF typ.  Low clamping voltage  Solid-state silicon technology Device Package Shipping ESD9X5V-2/TR FBP-02C 10000/Tape&Reel Applications  Cellular handsets  Tablets  Computers and peripherals  Notebooks  Digital camera  Other electronic equipment Will Semiconductor Ltd. 1 Revision 2.5, 2016/07/06 ESD9X5V Absolute maximum ratings Parameter Symbol Rating Unit Peak pulse power (tp = 8/20μs) Ppk 154 W Peak pulse current (tp = 8/20μs) IPP 11 A ESD according to IEC61000-4-2 air discharge ±30 VESD ESD according to IEC61000-4-2 contact discharge Junction temperature TJ Operating temperature TOP Lead temperature TL Storage temperature kV ±30 TSTG 125 o -40~85 o 260 o -55~150 o C C C C Electronics characteristics (TA = 25oC, unless otherwise noted) Parameter Symbol Reverse stand-off voltage VRWM Reverse leakage current IR Condition Min. Typ. VRWM = 5V Max. Unit 5.0 V 1.0 μA Reverse breakdown voltage VBR IT = 1mA 6.2 6.8 7.6 V Forward voltage VF IF = 1mA 0.4 0.8 1.3 V Clamping voltage VCL IPP = 1A, tp = 8/20μs 7.5 V IPP = 11A, tp = 8/20μs 14 V Junction capacitance CJ 70 pF Will Semiconductor Ltd. VR = 0V, f = 1MHz 2 60 Revision 2.5, 2016/07/06 ESD9X5V o 100 90 Front time: T1= 1.25 T = 8s 100 90 Time to half-value: T2= 20s Current (%) Peak pulse current (%) Typical characteristics (TA = 25 C, unless otherwise noted) 50 T2 10 0 0 10 tr = 0.7~1ns Time (s) T1 CJ - Junction capacitance (pF) VC - Clamping voltage (V) 12 10 8 0 2 4 6 Time (ns) 70 Pulse waveform: tp = 8/20s 14 6 t Contact discharge current waveform per IEC61000-4-2 8/20μs waveform per IEC61000-4-5 16 60ns 30ns 20 T 8 10 f = 1MHz VAC = 50mV 60 50 40 30 20 12 0 1 2 3 4 IPP - Peak pulse current (A) VR - Reverse voltage (V) Clamping voltage vs. Peak pulse current Capacitance vs. Reverse voltage 5 1000 % of Rated power Peak pulse power (W) 100 100 10 1 10 100 Pulse time (s) 60 40 20 0 1000 0 25 50 75 100 125 o TA - Ambient temperature ( C) Non-repetitive peak pulse power vs. Pulse time Will Semiconductor Ltd. 80 Power derating vs. Ambient temperature 3 Revision 2.5, 2016/07/06 150 ESD9X5V o Typical characteristics (TA = 25 C, unless otherwise noted) ESD clamping ESD clamping (+8kV contact discharge per IEC61000-4-2) Will Semiconductor Ltd. (-8kV contact discharge per IEC61000-4-2) 4 Revision 2.5, 2016/07/06 ESD9X5V Package outline dimensions FBP-02C L D1 D L2 b b1 E E1 L3 L1 e1 e Top View Bottom View Dimensions In Millimeters Min. Typ. Max. A 0.450 0.500 0.550 A1 0.010 -- 0.100 D 0.950 1.000 1.050 E 0.550 0.600 0.650 A A1 Symbol Side View D1 0.470 Ref. E1 0.420 Ref. b 0.270 0.320 0.370 b1 0.250 0.300 0.350 e 0.555 0.605 0.655 e1 L Recommend land pattern (Unit: mm) 0.250 L1 L2 0.40 L3 0.40 0.230 Ref. 0.300 0.350 0.030 Ref. 0.370 0.420 0.470 0.040 Ref. Notes: This recommended land pattern is for reference purposes only. Please consult your manufacturing 0.62 Will Semiconductor Ltd. 0.18 0.50 group to ensure your PCB design guidelines are met. 5 Revision 2.5, 2016/07/06