GP3134
20V N-Channel MOSFET
Product Summary
V(BR)DSS
RDS(on)MAX
SOT-523
ID
380mΩ@4.5V
20V
450mΩ@2.5V
0.75A
800mΩ@1.8V
Feature
High-Side Switching
Low On-Resistance
Low Threshold
Fast Switching Speed
ESD Protected
Application
Drivers:Relays, Solenoids, Lamps, Hammers,Displays, Memories
Battery Operated Systems
Power Supply Converter Circuits
Load/Power Switching Cell Phones, Pagers
MARKING:
Schematic diagram
ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±12
V
ID
0.75
A
IDM
3
A
PD
150
mW
RθJA
833
℃/W
Junction Temperature
TJ
150
℃
Storage Temperature
TSTG
-55~ +150
℃
Continuous Drain Current
Pulsed Drain Current (t=300µs)
Power Dissipation
(1)
(2)
Thermal Resistance from Junction to Ambient
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GP3134
MOSFET ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Type
Max
Unit
Static Characteristics
Drain-source breakdown voltage
V(BR)DSS
VGS = 0V, ID =250µA
Zero gate voltage drain current
IDSS
VDS =20V,VGS = 0V
Gate-body leakage current
IGSS
VGS =±10V, VDS = 0V
VGS(th)
VDS =VGS, ID =250µA
(3)
Gate threshold voltage
Drain-source on-resistance
(3)
Forward tranconductance
Dynamic characteristics
RDS(on)
gFS
20
V
1
µA
±20
µA
0.75
1.1
V
VGS =4.5V, ID =650mA
190
380
VGS =2.5V, ID =550mA
260
450
VGS =1.8V, ID =450mA
390
800
VDS =10V, ID =800mA
0.35
1
mΩ
S
(4)
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Switching Characteristics
120
VDS =16V,VGS =0V,f =1MHz
20
Crss
pF
15
(4)
Turn-on delay time
td(on)
Turn-on rise time
tr
Turn-off delay time
td(off)
Turn-off fall time
6.7
VDD=10V,ID=500mA,
4.8
VGS=4.5V,RG=10Ω
17.3
tf
ns
7.4
Source-Drain Diode characteristics
Diode Forward voltage
(3)
VDS
IS=0.15A, VGS = 0V
1.2
V
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. This test is performed with no heat sink at Ta=25℃.
3. Pulse Test : Pulse Width≤300μs, Duty Cycle≤0.5%.
4. These parameters have no way to verify.
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GP3134
Typical Electrical and Thermal Characteristics
Transfer Characteristics
Output Characteristics
2.0
VGS=5V
Ta=25℃
VDS=3V
Plused
VGS=3V
Plused
1.5
VGS=2V
VGS=4V
1.2
VGS=1.5V
0.8
Drain Current ID(A)
Drain Current ID(A)
1.6
1.8
VGS=2.5V
0.4
Ta=25℃
Ta=125℃
1.2
0.9
0.6
0.3
0.0
0.0
0.4
0.8
1.2
1.6
0.0
0.0
2.0
Drain to Source Voltage VDS(V)
1.8
2.4
RDS(ON)——VGS
ID=650mA
Plused
Plused
0.6
VGS=1.8V
0.4
VGS=2.5V
VGS=4.5V
0.2
3.0
2.0
Ta=25℃
On-Resistancer RDSON(Ω)
On-Resistancer RDSON(Ω)
1.2
Gate to Source Voltage VGS(V)
RDS(ON)——ID
0.8
0.6
1.5
1.0
Ta=125℃
0.5
Ta=25℃
0.0
0.0
0.0
0.3
0.6
0.9
1.2
1.5
1.8
1
Drain Current ID(A)
2
3
4
5
Gate to Source Voltage VGS(V)
IS——VSD
Threshold Voltage
0.8
0.1
Threshold Voltage VTH(V)
Source Current IS(A)
1
Plused
Ta=125℃
Ta=25℃
0.01
0.2
0.4
0.6
0.8
Source to Drain Voltage VSD(V)
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1.0
1.2
0.7
ID=250uA
0.6
0.5
25
50
75
100
125
Juction Temperature TJ(℃)
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GP3134
SOT-523 Package Information
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GP3134
SOT-523 Tape and Reel
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