ASDM2305ZA-R

ASDM2305 20V P-CHANNEL MOSFET Product Summary Features ● VDS = - 2 0 V , I D = - 5 . 4 A RDS(ON) < 6 0 m Ω @ VGS=-2.5V VDS RDS(on),typ RDS(ON) < 4 5 m Ω @ VGS=-4.5V RDS(on),typ ID ● High power and current handing capability ● Lead free product is acquired VGS=-4.5V 45 V mΩ VGS=-2.5V 60 mΩ -5.4 A -20 ● Surface mount package Application ● Motor control and drive top view D ● Battery management ● UPS (Uninterrupible Power Supplies) G SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter ameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IDM Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IS PD TJ, Tstg Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 10 s. NOV 2018 Version1.0 ID 1/9 Limit -8 ±8 - 5.4 - 4.3 - 4.1a, b - 3.3a, b - 10 - 1.4 - 0.8a, b 1.7 1.1 0.96a, b 0.62a, b - 50 to 150 260 Unit V A W °C Ascend Semicondutor Co.,Ltd ASDM2305 20V P-CHANNEL MOSFET THERMAL RESISTANCE RATINGS Parameter t ≤ 10 s Steady State Maximum Junction-to-Ambienta, b Maximum Junction-to-Foot (Drain) Symbol RthJA RthJF Typical 100 60 Maximum 130 75 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 175 °C/W. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS VGS = 0 V, ID = - 250 µA - 20 ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ ID = - 250 µA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea RDS(on) Forward Transconductancea Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg tr Rise Time td(off) Turn-Off DelayTime Fall Time Turn-On Delay Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Currenta - 0.8 V ± 100 nA -1 - 10 -5 0.040 VGS = - 2.5 V, ID = - 3.4 A 0.048 0.060 VGS = - 1.8 V, ID = - 2.0 A 0.070 0.088 VDS = - 5 V, ID = - 4.1 A 8 740 VDS = - 4 V, VGS = 0 V, f = 1 MHz 290 pF 190 VDS = - 4 V, VGS = - 4.5 V, ID = - 4.1 A VDS = - 4 V, VGS = - 2.5 V, ID = - 4.1 A 7.8 15 4.5 9 1.2 VDD = - 4 V, RL = 1.2 Ω ID ≅ - 3.3 A, VGEN = - 4.5 V, Rg = 1 Ω 1.4 7 14 13 20 35 53 48 td(on) 5 10 11 17 VDD = - 4 V, RL = 1.2 Ω ID ≅ - 3.3 A, VGEN = - 8 V, Rg = 1 Ω IS 22 33 16 24 TC = 25 °C - 1.4 ISM - 10 VSD Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb nC 1.6 f = 1 MHz 20 Body Diode Reverse Recovery Time Ω S 10 trr µA A 0.032 tf Fall Time - 0.45 tf td(off) Turn-Off DelayTime mV/°C 2.1 VDS = - 8 V, VGS = 0 V VDS ≤ - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 4.1 A Unit V - 55 32 tr Rise Time Max. VDS = - 8 V, VGS = 0 V, TJ = 55 °C td(on) Turn-On Delay Time Pulse Diode Forward Body Diode Voltage gfs Typ. IF = - 3.3 A IF = - 3.3 A, dI/dt = 100 A/µs, TJ = 25 °C Ω ns A - 0.8 - 1.2 V 33 50 ns 14 21 nC 14 19 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. NOV 2018 Version1.0 2/9 Ascend Semicondutor Co.,Ltd ASDM2305 20V P-CHANNEL MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 12 VGS = 4.5 V thru 2 V 9 9 6 I D - Drain Current (A) I D - Drain Current (A) 12 VGS = 1.5 V 3 6 3 TC = 125 °C TC = 25 °C VGS = 0.5 V VGS = 1 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 TC = - 55 °C 0 0.0 4.0 0.5 VDS - Drain-to-Source Voltage (V) 1.5 2.0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 1200 0.10 VGS = 1.8 V 0.08 900 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 1.0 0.06 VGS = 2.5 V Ciss 600 Coss 300 0.04 VGS = 4.5 V Crss 0 0.02 0 2 4 8 0 10 2 6 8 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current and Gate Voltage Capacitance 1.5 4.5 2.7 VDS = 6.4 V 1.8 VDS = 2.5 V, ID = 3.4 A 1.3 (Normalized) VDS = 4 V RDS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) ID = 4.1 A 3.6 1.1 VDS = 4.5 V, ID = 4.1 A 0.9 0.9 0.0 0.0 1.5 3.0 4.5 6.0 7.5 0.7 - 50 9.0 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) On-Resistance vs. Junction Temperature Gate Charge NOV 2018 Version1.0 - 25 3/9 Ascend Semicondutor Co.,Ltd ASDM2305 20V P-CHANNEL MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.10 RDS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 4.1 A 10 TJ = 150 °C TJ = 25 °C 1 0.1 0.0 0.08 0.06 TA = 125 °C 0.04 TA = 25 °C 0.02 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 2 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 30 0.7 0.6 ID = 250 µA Power (W) VGS(th) (V) 20 0.5 0.4 10 0.3 0.2 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 100 I D - Drain Current (A) Limited by RDS(on)* 10 1 ms 1 10 ms 100 ms 1s 10 s DC 0.1 TA = 25 °C Single Pulse 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient NOV 2018 Version1.0 4/9 Ascend Semicondutor Co.,Ltd ASDM2305 20V P-CHANNEL MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 6.0 I D - Drain Current (A) 4.5 3.0 1.5 0.0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 2.0 1.00 1.5 0.75 Power (W) Power (W) Current Derating* 1.0 0.5 0.50 0.25 0.0 0.00 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) TC - Case Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient * The po er dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. NOV 2018 Version1.0 5/9 Ascend Semicondutor Co.,Ltd ASDM2305 20V P-CHANNEL MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 Notes: 0.02 PDM t1 0.01 Single Pulse t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 175 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.001 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot NOV 2018 Version1.0 6/9 Ascend Semicondutor Co.,Ltd ASDM2305 20V P-CHANNEL MOSFET Ordering and Marking Information Device ASDM2305ZA Marking Package Packaging Quantity Reel Size Tape width 2305 SOT23 Tape&Reel 3000/Reel - - MARKING PACKAGE 2305 SOT23 Ordering Number Lead Free Halogen Free ASDM2305G-ZA-R ASDM2305-ZA-R Package SOT23 1 T:Tube,R:Tape Reel ASDM2305G-ZA-R 2 ZA: SOT23 3 blank : Lead Free 1 Packing Type G:Halogen Free and Lead Free 2 Package Type 3Green Package NOV 2018 Version1.0 7/9 Ascend Semicondutor Co.,Ltd ASDM2305 20V P-CHANNEL MOSFET Symbol Dimensions in Millimeters Min Max Dimensions in Inches Min Max A 0.90 1.15 0.035 0.045 A1 0.00 0.10 0.000 0.004 A2 0.90 1.05 0.035 0.041 b 0.30 0.55 0.012 0.022 C 0.08 0.15 0.003 0.006 D 2.80 3.00 0.110 0.118 E 1.20 1.40 0.047 0.055 0.95 TYP e 0.037 TYP e1 1.80 2.00 0.071 0.079 H 2.25 2.55 0.089 0.100 L 0.30 0.50 0.012 0.020 θ 0∘ 8∘ 0∘ 8∘ NOV 2018 Version1.0 8/9 Ascend Semicondutor Co.,Ltd ASDM2305 20V P-CHANNEL MOSFET IMPORTANT NOTICE Xi‘an Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Should Customers purchase or use Xi‘an Ascend Semiconductor Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Xi‘an Ascend Semiconductor Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. www.ascendsemi.com NOV 2018 Version1.0 9/9 Ascend Semicondutor Co.,Ltd