0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
ASDM6802ZC-R

ASDM6802ZC-R

  • 厂商:

    ASCEND(安森德)

  • 封装:

    SOT23-6

  • 描述:

    类型:2个N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):4.5A;功率(Pd):1.2W;导通电阻(RDS(on)@Vgs,Id):33mΩ@10V,4.5A;阈值电压(Vgs(th)@...

  • 数据手册
  • 价格&库存
ASDM6802ZC-R 数据手册
ASDM6802ZC 30V N-CHANNEL MOSFET Features  High Power and current handing capability  Lead free product is acquired  Surface Mount Package  Available in SOT23-6 Package Product Summary V DS 30 V R DS(on),MAX@ VGS=10 V 45 mΩ ID 4.5 A Applications  PWM applications  Load switch  Power management D1 D2 Top View Top View G1 1 S2 G2 D1 2 6 5 3 4 D2 S1 G1 G2 S1 Pin1 SOT23-6 S2 N-Channel MOSFET 4.5 3.9 24 1.2 0.8 NOV 2018 Version2.0 1/7 Ascend Semicondutor Co.,Ltd ASDM6802ZC 30V N-CHANNEL MOSFET 25 4.5A 1.5 2.5 33 45 4.5A 4A 65 53 75 4A 245 A. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. B. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25 C. C. The static °characteristics in Figures 1 to 6 are obtained using
ASDM6802ZC-R 价格&库存

很抱歉,暂时无法提供与“ASDM6802ZC-R”相匹配的价格&库存,您可以联系我们找货

免费人工找货