FIR7N60FG

FIR7N60FG Advanced N-Ch Power MOSFET-I PIN Connection General Description FIR7N60FG is an N-channel enhancement mode MOS field effect transistor which is proprietary F-Cell TM structure TO-220F power produced using VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation G D mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. S Schematic diag ram D Features • • • • • 7A,600V,RDS(on)（typ）= 1.0 Ω@VGS=10V Low gate charge G Low Crss S Fast switching Improved dv/dt capability Marking Diagram YAWWVT FIR7N60F Y = Year A = Assembly Location WW = Work Week VT = Version & Thickness FIR7N60F = Specific Device Code Absolute Maximum Ratings (Ta = 25o C unless otherwise noted ) Symbol Ratings Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V Characteristics TC=25°C Drain Current TC=100°C Drain Current Pulsed ID A 4.0 28 A 45 W 0.36 W/°C EAS 489 mJ Operation Junction Temperature Range TJ -55～+150 °C Storage Temperature Range Tstg -55～+150 °C Power Dissipation(TC=25°C) -Derate above 25°C Single Pulsed Avalanche Energy (Note 1) @ 2018 Copyright By American First Semiconductor IDM 7.0 PD REV:1.0 Page 1/7 FIR7N60FG Thermal Characteristics Symbol Ratings Unit Thermal Resistance, Junction-to-Case RθJC 2.78 °C/W Thermal Resistance, Junction-to-Ambient RθJA 120 °C/W Characteristics Electrical Characteristics (Ta = 25oC unless otherwise noted ) Characteristics Symbol Drain -Source Breakdown Voltage BVDSS Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Static Drain- Source On State Resistance IDSS IGSS Test conditions Min. Typ. Max. 25 °C, VGS=0V, ID=250µA 600 -- . -- . V 125 °C, VGS=0V, ID=250µA 600 -- -- V 25 °C, VDS=600V, VGS=0V -- -- 1 uA 125 °C, VDS=600V, VGS=0V -- -- 50 uA 150 °C, VDS=600V, VGS=0V -- -- 100 uA VGS=±30V, VDS=0V -- -- ±100 nA 2.5 -- 3.8 .0 V -- 1 1.4 Ω -- 885 -- -- 104 -- -- 3.8 -- VDD=300V,ID=7.0A, -- 27.33 -- RG=25Ω -- 58.40 -- -- 42.13 -- -- 31.20 -- VGS(th) VGS= VDS, ID=250µA RDS(on) VGS=10V, ID=3.5A Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) VDS=25V,VGS=0V, f=1.0MHZ (Note 2,3) Turn-off Fall Time tf Total Gate Charge Qg VDS=480V,ID=7.0A, -- 15.16 -- Gate-Source Charge Qgs VGS=10V -- 5.08 -- Gate-Drain Charge Qgd -- 4.95 -- Min. Typ. Max. -- -- 7.0 -- -- 28 (Note 2,3) Unit pF ns nC Source-Drain Diode Ratings And Characteristics Characteristics Symbol Test conditions Integral Reverse Junction Diode Continuous Source Current IS Pulsed Source Current ISM Diode Forward Voltage VSD IS=7.0A,VGS=0V -- -- 1.2 V Reverse Recovery Time Trr IS=7.0A,VGS=0V, -- 500 -- ns Reverse Recovery Charge Qrr dIF/dt=100A/µS -- 3.4 -- µC MOSFET in P-N Unit the A Notes: 1. L=30mH,IAS=5.16A, VDD=159V, RG=25Ω,starting TJ=25°C; 2. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%; 3. Essentially independent of operating temperature. www.First-semi.com Page 2/7 FIR7N60FG Typical Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 100 Variable VGS=4.5V VGS=5V VGS=5.5V VGS=6V VGS=7V Drain Current – ID(A) Drain Current – ID(A) 10 VGS=8V 1 VGS=10V VGS=15V Notes: 1.250µS pulse test 2.TC=25°C 0.1 0.1 1 10 -55°C 25°C 150°C 10 1 0.1 100 Notes: 1.250µS pulse test 2.VDS=50V 0 Drain-Source Voltage – VDS(V) Figure 3. On-Resitance Variation vs. Drain Current and Gate Voltage 1.1 1.0 Note: TJ=25°C 2 4 8 6 10 8 9 10 0 0.25 0.50 0.75 1.00 1.25 1.50 Source-Drain Voltage– VSD(V) Figure 6. Gate Charge Characteristics 12 1600 Gate-Source Voltage– VGS(V) Ciss=Cgs+Cgd(Cds=shorted) Coss=Cds+Cgd Crss=Cgd 1800 Capasistance(pF) 7 Notes: 1.250µS pulse test 2.VGS=0V Figure 5. Capacitance Characteristics 1400 1200 1000 Ciss Coss Crss Notes: 1. VGS=0V 2. f=1MHz 400 200 0 0.1 6 1 0.1 10 2000 800 5 -55°C 25°C 150°C Drain Current – ID(A) 600 4 100 1.2 0.9 0 3 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature VGS=10V VGS=20V 1.3 2 Gate-Source Voltage– VGS(V) Reverse Drain Current – IDR(A) Drain-Source On-Resistance – RDS(ON)(Ω) 1.4 1 VDS=480V VDS=300V VDS=120V 10 8 6 4 2 Note: ID=7.0A 0 1 10 100 Drain-Source Voltage – VDS(V) 0 4 8 12 16 Total Gate Charge – Qg(nC) www.First-semi.com Page 3/7 7/7 FIR7N60FG 1.2 Figure 7. Breakdown Voltage Variation vs. Temperature 1.1 1.0 0.9 0.8 -100 Notes: 1. VGS=0V 2. ID=250µA -50 0 50 100 150 2.5 2.0 1.5 1.0 Notes: 1. VGS=10V 2. ID=3.5A 0.5 0.0 -100 200 Junction Temperature – TJ(°C) 102 Figure 8. On-resistance Variation vs. Temperature 3.0 Drain-Source On-Resistance – RDS(ON)(Normalized) Drain-Source Breakdown Voltage– BVDSS(Normalized) Typical Characteristics(Continued) -50 0 50 100 150 200 Junction Temperature – TJ(°C) Figure 9 . Max. Safe Operating Area(FIR7N60FG) Figure 10. Maximum Drain Current vs. Case Temperature 8 Operation in This Area is Limited by RDS(ON) 1ms Drain Current - ID(A) Drain Current - ID(A) 100µs 101 10ms 10 0 10-1 10-2 100 DC Notes: 1.TC=25°C 2.Tj=150°C 3.Single Pulse 101 102 103 6 4 2 0 25 Drain Source Voltage - VDS(V) 50 75 100 125 150 Case Temperature – TC(°C) www.First-semi.com Page 4/7 FIR7N60FG Typical Test Circuit Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ Qg 10V VDS 200nF 12V 300nF Qgs Qgd VGS DUT 3mA Charge Resistive Switching Test Circuit & Waveform RL VDS VDS 90% VGS VDD RG DUT 10% VGS 10V td(on) tr ton td(off) tf toff Unclamped Inductive Switching Test Circuit & Waveform EAS = L VDS BVDSS 1 2 2 LIAS BVDSS - VDD BVDSS ID IAS RG DUT 10V ID(t) VDD VDS(t) VDD tp tp www.First-semi.com Time Page 5/7 FIR7N60FG Package Dimensions TO−220F A A1 Units：mm A2 θ θ H1 θ 6°±1° A4 θ c A3 θ1 θ θ A4 θ θ θ www.First-semi.com Page 6/7 FIR7N60FG Declaration z FIRST reserves the right to change the specifications, the same specifications of products due to different packaging line mold, the size of the appearance will be slightly different, shipped in kind, without notice! Customers should obtain the latest version information before ordering, and verify whether the relevant information is complete and up-to-date. z Any semiconductor product under certain conditions has the possibility of failure or failure,The buyer has the responsibility to comply with safety standards and take safety measures when using FIRST products for system design and manufacturing,To avoid To avoid potential failure risks, which may cause personal injury or property damage! z Product promotion endless, our company will wholeheartedly provide customers with better products! ATTACHMENT Revision History Date 2018.01.01 REV 1.0 Description Page Initial release www.First-semi.com Page 7/7