FIR7N65FG

FIR7N65FG Advanced N-Ch Power MOSFET PIN Connection TO-220F General Description FIR7N65FG is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and G D withstand high energy pulse in the avalanche and commutation S mode. These devices are widely used in AC-DC power suppliers, DC- 2 DC converters and H-bridge PWM motor drivers. 1 Features • • • • • 7A,650V,RDS(on)（typ）=1.1 Ω@VGS=10V 3 Low gate charge Marking Diagram Low Crss Fast switching Improved dv/dt capability YAWW FIR7N65F Y = Year A = Assembly Location WW = Work Week FIR7N65F = Specific Device Code Absolute Maximum Ratings (Ta = 25o C unless otherwise noted ) Symbol Ratings Unit Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS ±30 V Characteristics TC = 25°C Drain Current TC = 100°C ID 7.0 4.0 A 28 A 145 W 1.16 W/°C EAS 435 mJ Operation Junction Temperature Range TJ -55～+150 °C Storage Temperature Range Tstg -55～+150 °C Drain Current Pulsed Power Dissipation(TC=25°C) -Derate above 25°C Single Pulsed Avalanche Energy (Note 1) @ 2014 Copyright By American First Semiconductor IDM PD Page 1/6 FIR7N65FG Thermal Characteristics Symbol Ratings Unit Thermal Resistance, Junction-to-Case RθJC 0.65 °C/W Thermal Resistance, Junction-to-Ambient RθJA 62.5 °C/W Characteristics Electrical Characteristics (Ta = 25oC unless otherwise noted ) Characteristics Symbol Drain -Source Breakdown Voltage BVDSS Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Static Drain- Source On State Resistance Test conditions Min. Typ. Max. Unit 25 °C,VGS=0V, ID=250µA 650 -- -- V 125°C,VGS=0V, ID=250µA 650 -- -- V 25 °C, VDS=650 V, VGS=0V -- -- 10 uA 125 °C,VDS=650V, VGS=0V -- -- 50 uA 150 °C, VDS=650V, VGS=0V -- -- 100 uA IGSS VGS=±30V, VDS=0V -- -- ±100 nA VGS(th) VGS= VDS, ID=250µA 2.0 -- 4.0 V RDS(on) VGS=10V, ID=3.5A -- 1.1 1.4 Ω -- 903.3 -- -- 97.7 -- -- 3.1 -- VDD=325V, RG=25Ω, -- 29.00 -- ID=7.0A -- 48.00 -- -- 39.00 -- -- 33.00 -- IDSS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) VDS=25V,VGS=0V, f=1.0MHZ (Note 2,3) Turn-off Fall Time tf Total Gate Charge Qg VDS=520V, ID=7.0A, -- 15.50 -- Gate-Source Charge Qgs VGS=10V -- 5.40 -- Gate-Drain Charge Qgd -- 4.50 -- (Note 2,3) pF ns nC Source-Drain Diode Ratings And Characteristics Characteristics Symbol Test conditions Integral Reverse P-N Min. Typ. Max. -- -- 7.0 -- -- 28.0 Unit Continuous Source Current IS Pulsed Source Current ISM Diode Forward Voltage VSD IS=7.0A,VGS=0V -- -- 1.4 V Reverse Recovery Time Trr IS=7.0A,VGS=0V, -- 532.77 -- ns Reverse Recovery Charge Qrr dIF/dt=100A/µS(Note 2) -- 3.57 -- µC Junction Diode in the MOSFET A Notes: 1. L=30mH, IAS=5.0A, VDD=100V, RG=25Ω,starting TJ=25°C; 2. Pulse Test: Pulse width ≤300μs, Duty cycle≤2%; 3. Essentially independent of operating temperature. www.First-semi.com Page 2/6 FIR7N65FG Typical Characteristics Figure 1. On-Region Characteristics Variable VGS=4.5V VGS=5V VGS=5.5V VGS=6V VGS=7V 10 -55°C 25°C 150°C Drain Current – ID(A) Drain Current – ID(A) Figure 2. Transfer Characteristics 100 100 VGS=8V VGS=10V VGS=15V 1 10 1 Notes: 1.250µS pulse test 2.VDS=50V Notes: 1.250µS pulse test 2.TC=25°C 0.1 0.1 1 10 0.1 100 0 Drain-Source Voltage – VDS(V) VGS=10V VGS=20V 1.4 1.3 1.2 1.1 1.0 0.9 Note: TJ=25°C 0.8 0 4 2 6 8 1 0.1 0.2 10 7 8 9 10 0.4 0.6 0.8 1.0 1.2 Figure 6. Gate Charge Characteristics 12 1600 Gate-Source Voltage– VGS(V) Ciss=Cgs+Cgd(Cds=shorted) Coss=Cds+Cgd Crss=Cgd 1800 Capasistance(pF) 6 Source-Drain Voltage– VSD(V) 2000 1400 1200 1000 Ciss Coss Crss Notes: 1. VGS=0V 2. f=1MHz 400 200 0 0.1 5 Notes: 1.250µS pulse test 2.VGS=0V Figure 5. Capacitance Characteristics 600 4 -55°C 25°C 150°C Drain Current – ID(A) 800 3 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 10 Reverse Drain Current – IDR(A) Drain-Source On-Resistance – RDSON)(Ω) 1.5 2 Gate-Source Voltage– VGS(V) Figure 3. On-Resitance Variation vs. Drain Current and Gate Voltage 1.6 1 1 10 100 Drain-Source Voltage – VDS(V) VDS=520V VDS=325V VDS=130V 10 8 6 4 2 Note:ID=7.0A 0 0 4 8 12 16 Total Gate Charge – Qg(nC) www.First-semi.com Page 3/6 FIR7N65FG 1.2 Figure 7. Breakdown Voltage Variation vs. Temperature 1.1 1.0 0.9 0.8 -100 102 Notes: 1. VGS=0V 2. ID=250µA -50 0 50 100 150 1.0 Notes: 1. VGS=10V 2. ID=3.5A 0.5 -50 50 0 100 150 200 Figure 9 . Max. Safe Operating Area(FIR7N65FG) Figure 10. Maximum Drain Current vs. Case Temperature 10 8 Drain Current - ID(A) Drain Current - ID(A) 1.5 Junction Temperature – TJ(°C) 1ms 10ms DC 0 Operation in This Area is Limited by RDS(ON) 10-2 100 2.0 0.0 -100 200 100µs 10-1 2.5 Junction Temperature – TJ(°C) 101 10 Figure 8. On-resistance Variation vs. Temperature 3.0 Drain-Source On-Resistance – RDS(ON)(Normalized) Drain-Source Breakdown Voltage– BVDSS(Normalized) Typical Characteristics(Continued) Notes: 1.TC=25°C 2.Tj=150°C 3.Single Pulse 101 102 103 Drain Source Voltage - VDS(V) 6 4 2 0 25 50 75 100 125 150 Case Temperature – TC(°C) www.First-semi.com Page 4/6 FIR7N65FG Typical Test Circuit Gate Charge Test Circuit & Waveform 50KΩ Qg 10V VDS 200nF 12V VGS Same Type as DUT 300nF Qgd Qgs VGS DUT 3mA Charge Resistive Switching Test Circuit & Waveform RL VDS VDS 90% VGS VDD RG DUT 10% VGS 10V td(on) tr ton td(off) tf toff Unclamped Inductive Switching Test Circuit & Waveform EAS = L VDS BVDSS 1 2 2 LIAS BVDSS - VDD BVDSS ID IAS RG DUT 10V tp ID(t) VDD VDS(t) VDD tp www.First-semi.com Time Page 5/6 FIR7N65FG Package Dimensions TO-220F −T− −B− F SEATING PLANE C S Q NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. 221D-01 THRU 221D-02 OBSOLETE, NEW STANDARD 221D-03. U A 1 2 3 H −Y− K G N L D J R 3 PL 0.25 (0.010) M B M DIM A B C D F G H J K L N Q R S U INCHES MIN MAX 0.617 0.635 0.392 0.419 0.177 0.193 0.024 0.039 0.116 0.129 0.100 BSC 0.118 0.135 0.018 0.025 0.503 0.541 0.048 0.058 0.200 BSC 0.122 0.138 0.099 0.117 0.092 0.113 0.239 0.271 MILLIMETERS MIN MAX 15.67 16.12 9.96 10.63 4.50 4.90 0.60 1.00 2.95 3.28 2.54 BSC 3.00 3.43 0.45 0.63 12.78 13.73 1.23 1.47 5.08 BSC 3.10 3.50 2.51 2.96 2.34 2.87 6.06 6.88 Y www.First-semi.com Page 6/6