FIR4N65LG

FIR4N65LG Advanced N-Ch Power MOSFET-H PIN Connection TO-252(D-PAK) General Description FIR4N65LG , the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology D which reduce the conduction loss, improve switching G performance and enhance the avalanche energy. The transistor S can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252 , which accords with the RoHS standard. Schematic diag ram D Features G l Fast Switching S l ESD Improved Capability l Low Gate Charge Marking Diagram l Low Reverse transfer capacitances YAWWVA l 100% Single Pulse avalanche energy Test FIR4N65L Y = Year A = Assembly Location WW = Work Week VA = Version &Assembly plant FIR4N65L = Specific Device Code Absolute Maximum Ratings (Ta = 25o C unless otherwise noted; reference only ) Symbol Ratings Unit Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS ±30 V Characteristics TC=25°C Drain Current TC=100°C Drain Current Pulsed Power Dissipation(TC=25°C) -Derate above 25°C ID IDM PD 4.0 A 2.5 16 A 75 W 0.6 W/°C Single Pulsed Avalanche Energy(Note 1) EAS 200 mJ Operation Junction Temperature Range TJ -55～+150 °C Storage Temperature Range Tstg -55～+150 °C @ 2018 Copyright By American First Semiconductor REV:1.0 Page 1/7 FIR4N65LG Thermal Characteristics Symbol Ratings Unit Thermal Resistance, Junction-to-Case RθJC 1.67 °C/W Thermal Resistance, Junction-to-Ambient RθJA 110 °C/W Characteristics Electrical Characteristics (Ta = 25o C unless otherwise noted; reference only ) Characteristics Symbol Drain -Source Breakdown Voltage BVDSS Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Static Drain- Source On State Resistance Test conditions Min. Typ. Max. Unit 25 °C, VGS=0V, ID=250µA 650 -- -- V 125 °C, VGS=0V, ID=250µA 650 -- -- V 25 °C, VDS=650V, VGS=0V -- -- 1 uA 125 °C, VDS=520V, VGS=0V -- -- 100 uA 150 °C, VDS=520V, VGS=0V -- -- 100 uA IGSS VGS=±30V, VDS=0V -- -- ±100 nA VGS(th) VGS= VDS, ID=250µA 2.0 -- 4.0 V RDS(on) VGS=10V, ID=2A -- 2.4 2.8 Ω pF IDSS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) 610 VDS=25V,VGS=0V, -- 53 -- -- 3.5 -- VDD=325V,ID=4.0A, -- 14 -- RG=10Ω -- 16 -- -- 32 -- -- 11 -- f=1.0MHZ (Note 2,3) Turn-off Fall Time tf Total Gate Charge Qg VDS=520V,ID=4.0A, -- 14.5 -- Gate-Source Charge Qgs VGS=10V -- 3 -- Gate-Drain Charge Qgd -- 6.5 -- (Note 2,3) ns nC Source-Drain Diode Ratings And Characteristics Characteristics Symbol Test conditions Integral Reverse P-N Min. Typ. Max. Unit -- -- 4.0 -- -- 16 1.5 V Continuous Source Current IS Pulsed Source Current ISM Diode Forward Voltage VSD IS=4.0A,VGS=0V -- -- Reverse Recovery Time Trr IS=4.0A,VGS=0V, -- 256 -- ns Reverse Recovery Charge Qrr dIF/dt=100A/µs -- 1.2 -- µC Junction Diode in the MOSFET A Notes: 1. L=10mH,IAS= 6.3 A,VDD=100V, RG=10Ω, starting TJ=25°C; 2. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%; 3. Essentially independent of operating temperature. www.First-semi.com Page 2/7 FIR4N65LG Characteristics Curve 80 10 100us 1 OPERATION IN THIS AREA MAY BE LIMITED BY RDS(ON) TJ=MAX RATED TC=25℃ Single Pulse 0 .1 1ms 10ms PD , Power Dissipation Id , Drain Current , Amps Watts 100 60 40 20 DC 0 0 .0 1 1 0 10 100 V d s , D r a in - t o - S o u r c e V o lta g e , V o lts 1000 6 8 Id , Drain Current , Amps 3 2 150 250us Pluse Test Tc = 25℃ 5 4 125 Figure 2 Maximum Power Dissipation vs Case Temperature Figure 1 Maximum Forward Bias Safe Operating Area Id , Drain Current , Amps 75 50 100 TC , Case Temperature , C 25 VGS=10V 6 VGS=7V 4 VGS=5V VGS=6V VGS=4V 2 1 0 0 0 25 75 100 125 50 TC , C ase Tem perature , C 150 0 Figure 3 Maximum Continuous Drain Current vs Case Temperature Fi 5 25 Figure 4 Typical Output Characteristics e 5 Maximum Effective Thermal Im endance www.First-semi.com 10 15 20 Vds , Drain-to-Source Voltage , Volts unction to Case Page 3/7 FIR4N65LG 8 Isd, Reverse Drain Current , Amps Id , Drain Current , Amps 9 250us Pulse Test VDS=10V 7.5 6 4.5 +25℃ 3 +150℃ 1.5 7 6 5 4 1 0 4 6 8 Vgs , Gate to Source Voltage , Volts 2 Figure 6 10 0 Typical Transfer Characteristics Rds(on), Drain to Source ON Resistance, Nomalized PULSE DURATION = 10μs DUTY CYCLE= 0.5%MAX Tc =25 ℃ 3.5 VGS=10V 3 2.5 0.4 0.6 0.8 1 Vsd , Source - Drain Voltage , Volts 7 1.2 Typical Body Diode Transfer Characteristics 2.5 PULSE DURATION = 10μs DUTY CYCLE= 0.5%MAX VGS=10V ID=2A 2.25 2 1.75 1.5 1.25 1 0.75 2 0.5 0 1 Figure 8 2 3 Id , Drain Current , Amps -50 4 0 Figure Typical Drain to Source ON Resistance vs Drain Current 9 50 100 Tj, Junction temperature , C 150 Typical Drian to Source on Resistance vs Junction Temperature 1.15 1.15 Bvdss,Drain to Source Breakdown Voltage, Normalized 1.1 1.05 1 0.95 0.9 VGS=0V ID=250μA 0.85 0.8 0.75 1.05 VGS=0V ID=250μA 0.95 0.85 0.7 0.65 -75 -50 Figure 10 -25 0 25 50 75 100 Tj, Junction temperature , C 125 150 175 Typical Theshold Voltage vs Junction Temperature 0.75 -55 Figure Ciss 100 Coss VGS=0V , f=1MHz Ciss=Cgs+Cgd Coss=Cds+Cgd Crss=Cgd Vgs , Gate to Source Voltage ,Volts 1000 10 -30 11 -5 20 45 70 95 120 Tj, Junction temperature , C 145 170 Typical Breakdown Voltage vs Junction Temperature 12 10000 Capacitance , pF 0.2 Figure 4 Rds(on), Drain to Source ON Resistance, Ohms +25℃ 2 0 Vgs(th),Threshold Voltage, Nomalized +150℃ 3 10 VDS=520V VDS=325V VDS=130V 8 6 4 2 Crss ID=4A 0 1 0.1 Figure 1 10 Vds , Drain - Source Voltage , Volts 12 100 Typical Capacitance vs Drain to Source Voltage 0 Figure www.First-semi.com 3 13 6 9 Qg , Total Gate Charge , nC 12 15 Typical Gate Charge vs Gate to Source Voltage Page 4/7 FIR4N65LG Typical Test Circuit www.First-semi.com Page 5/7 FIR4N65LG Package Dimensions TO-252 " Units：mm 1 2 " SYMBOL A A1 b b2 b3 c D D1 E E1 e H L L2 L3 L4 INCHES MIN MAX 0.086 0.094 0.005 0.025 0.035 0.033 0.045 0.205 0.215 0.018 0.024 0.241 0.249 0.205 0.250 0.265 0.190 0.090 BSC. 0.380 0.410 0.055 0.070 0.020 BSC. 0.035 0.050 0.025 0.040 0° 8° MILLIMETERS MIN MAX 2.19 2.38 0.13 0.64 0.89 0.84 1.14 5.21 5.46 0.46 0.61 6.12 6.32 5.21 6.35 6.73 4.83 2.29 BSC. 9.65 10.41 1.40 1.78 0.51 BSC. 0.89 1.27 0.64 1.01 0° 8° www.First-semi.com NOTES Page 6/7 FIR4N65LG Declaration z FIRST reserves the right to change the specifications, the same specifications of products due to different packaging line mold, the size of the appearance will be slightly different, shipped in kind, without notice! Customers should obtain the latest version information before ordering, and verify whether the relevant information is complete and up-to-date. z Any semiconductor product under certain conditions has the possibility of failure or failure,The buyer has the responsibility to comply with safety standards and take safety measures when using FIRST products for system design and manufacturing,To avoid To avoid potential failure risks, which may cause personal injury or property damage! z Product promotion endless, our company will wholeheartedly provide customers with better products! ATTACHMENT Revision History Date 2018.01.01 REV 1.0 Description Page Initial release www.First-semi.com Page 7/7