2SC2246T3BL

2SC2246T3BL Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V (Min) ·High Switching Speed APPLICATIONS ·Power switching ·Power amplification ·Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT V VCBO Collector-Base Voltage 450 VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 30 A IB Base Current-Continuous 6 A PC Collector Power Dissipation @TC=25℃ 100 W Tj Junction Temperature 200 ℃ -65~200 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W Ordering Information Product 2SC2246T3BL V01 Package TO-3 Packaging Box 1 www.sourcechips.com 2SC2246T3BL ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; L= 25mH VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A 1.2 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.2A 1.5 V hFE DC Current Gain IC= 5A; VCE= 2V 12 60 hFE DC Current Gain IC= 10A; VCE= 2V 6 30 ICBO Collector Cutoff Current VCB= 450V; IE= 0 TC=125℃ 1.0 4.0 mA ICEO Collector Cutoff Current VCE= 400V; IB= 0 5.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA 1.0 μs 2.0 μs 1.0 μs 400 UNIT V Switching Times tr tstg tf V01 Rise Time Storage Time IC= 6A; IB1=- IB2= 1.2A Fall Time 2 www.sourcechips.com