2SC4552T2TL

2SC4552T2TL Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 60V(Min) ·High DC Current Gain: hFE= 100(Min)@ (VCE= 2V, IC= 3A) ·Low Saturation Voltage: VCE(sat)= 0.3V(Max)@ (IC= 8A, IB= 0.4A) APPLICATIONS ·Designed for use as a driver in DC/DC converters and actuators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7.0 V IC Collector Current-Continuous 15 A ICM Collector Current-Pulse 30 A IB Base Current-Continuous 7.5 A Total Power Dissipation @TC=25℃ 30 PT W Total Power Dissipation @Ta=25℃ 2.0 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ Ordering Information Product 2SC4552T2TL V01 Package TO-220F Packaging Tube 1 www.sourcechips.com 2SC4552T2TL ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA, Ib=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8A; IB= 0.4A 0.3 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 12A; IB= 0.6A 0.5 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 8A; IB= 0.4A 1.2 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 12A; IB= 0.6A 1.5 V ICBO Collector Cutoff Current VCB= 60V; IE= 0 10 μA ICEO Collector Cutoff Current VCE= 60V; Ib=0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA hFE-1 DC Current Gain IC= 1.5A; VCE= 2V 100 hFE-2 DC Current Gain IC= 3A; VCE= 2V 100 hFE-3 DC Current Gain IC= 8A; VCE= 2V 60 COB Output Capacitance IE= 0; VCB= 10V; f= 1.0MHz 180 pF Current-Gain—Bandwidth Product IC= 1.5A; VCE= 10V 120 MHz fT CONDITIONS MIN TYP. MAX 60 UNIT V 400 Switching times ton Turn-on Time tstg Storage Time tf  IC= 8.0A ,RL= 6.3Ω, IB1= -IB2= 0.4A,VCC≈ 50V Fall Time hFE-2 Classifications M L K 100-200 150-300 200-400 V01 2 www.sourcechips.com 0.3 μs 1.5 μs 0.3 μs