FKN0107

FKN0107 FETek Technology Corp. P-Ch 100V Fast Switching MOSFETs  Super Low Gate Charge  Excellent Cdv/dt effect decline  Green Device Available  Advanced high cell density Trench technology Product Summary BVDSS RDSON ID -100V 0.65Ω -0.9A SOT23 Pin Configuration Description The FKN0107 is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The FKN0107 meets the RoHS and Green Product requirement with full function reliability approved. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -100 V VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ ±20 V Continuous Drain Current, VGS @ -10V1 -0.9 A Continuous Drain Current, VGS @ -10V1 -0.7 A Current2 -1.8 A Dissipation3 1 W Pulsed Drain Total Power TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-ambient RθJC Thermal Resistance Junction-Case1 Data and specifications subject to change without notice. www.fetek.com.tw Ver : A 1 Typ. Max. Unit --- 125 ℃/W --- 80 ℃/W 1 FKN0107 FETek Technology Corp. P-Ch 100V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current Conditions Min. Typ. Max. Unit -100 --- --- V Reference to 25℃ , ID=-1mA --- -0.0624 --- V/℃ VGS=-10V , ID=-0.8A --- 0.52 0.65 VGS=-4.5V , ID=-0.4A --- 0.56 0.7 -1.0 -1.5 -2.5 V --- 4.5 --- mV/℃ VDS=-80V , VGS=0V , TJ=25℃ --- --- 10 VDS=-80V , VGS=0V , TJ=55℃ --- --- 100 VGS=0V , ID=-250uA VGS=VDS , ID =-250uA  uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-0.8A --- 3 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 16 32  Qg Total Gate Charge (-4.5V) --- 4.5 --- --- 1.14 --- VDS=-15V , VGS=-4.5V , ID=-0.5A Qgs Gate-Source Charge Qgd Gate-Drain Charge --- 1.5 --- Td(on) Turn-On Delay Time --- 13.6 --- nC Rise Time VDD=-50V , VGS=-10V , RG=3.3 --- 6.8 --- Turn-Off Delay Time ID=-0.5A --- 34 --- Fall Time --- 3 --- Ciss Input Capacitance --- 553 --- Coss Output Capacitance --- 29 --- Crss Reverse Transfer Capacitance --- 20 --- Min. Typ. Max. Unit --- --- -0.9 A --- --- -1.8 A --- --- -1.2 V Tr Td(off) Tf VDS=-15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter Current1,4 IS Continuous Source ISM Pulsed Source Current2,4 VSD Diode Forward Voltage2 Conditions VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Data and specifications subject to change without notice. www.fetek.com.tw Ver : A 2 FKN0107 FETek Technology Corp. P-Ch 100V Fast Switching MOSFETs Typical Characteristics 550 1.2 ID= 0 . 5 A 540 RD S O N( m Ω ) -ID Drain Current (A) VGS=-10V 0.9 VGS=-7V 530 VGS=-5V 0.6 520 VGS=-4.5V VGS=-3V 0.3 510 500 0.0 0 0.25 0.5 0.75 2 1 -VDS ,Drain-to-Source Voltage (V) 8 10 Fig.2 On-Resistance vs. Gate-Source Voltage 1.5 -VGS Gate to Source Voltage (V) 10 VDS=-20V ID=-0.5A 7.5 1 TJ=150℃ TJ=25℃ 0.5 5 2.5 0 0.00 0 0.25 0.50 0.75 1.00 0 -VSD , Source-to-Drain Voltage (V) 5 7.5 10 Fig.4 Gate-Charge Characteristics diode 2.0 Normalized On Resistance 1.8 2.5 QG , Total Gate Charge (nC) Fig.3 Forward Characteristics Of Reverse Normalized VGS(th) (V) 6 -VGS (V) Fig.1 Typical Output Characteristics -IS Source Current(A) 4 1.4 1.5 1 1.0 0.6 0.2 0.5 -50 0 50 100 TJ ,Junction Temperature (℃ ) Fig.5 Normalized VGS(th) vs. TJ Data and specifications subject to change without notice. www.fetek.com.tw Ver : A 150 -50 0 50 100 150 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ 3 FKN0107 FETek Technology Corp. P-Ch 100V Fast Switching MOSFETs 1000 10.00 F=1.0MHz Ciss 1ms Capacitance (pF) 1.00 100ms 100 Coss -ID (A) 0.10 1s 0.01 DC 10S TA=25℃ Single Pulse Crss 10 1 5 9 13 17 21 25 -VDS ,Drain to Source Voltage (V) 0.00 0.1 1 Fig.7 Capacitance 10 100 -VDS (V) 1000 Fig.8 Safe Operating Area Normalized Thermal Response (R θJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 PDM 0.001 TON SINGLE PULSE T D = TON/T TJpeak = TC + PDM x RθJC 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance VDS 90% 10% VGS Td(on) Tr Ton Td(off) Tf Toff Fig.10 Switching Time Waveform Data and specifications subject to change without notice. www.fetek.com.tw Ver : A Fig.11 Gate Charge Waveform 4