FKBA3006

FKBA3006 FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs Product Summary  100% EAS Guaranteed  Green Device Available  Super Low Gate Charge  Excellent CdV/dt effect decline  Advanced high cell density Trench technology BVDSS RDSON ID 30V 5.5mΩ 81A PRPAK5X6 Pin Configuration Description The FKBA3006 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKBA3006 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM Rating Units Drain-Source Voltage 30 V Gate-Source Voltage ±20 V Continuous Drain Current, VGS @ 10V 1 81 A Continuous Drain Current, VGS @ 10V 1 51 A Continuous Drain Current, VGS @ 10V 1 15 A Continuous Drain Current, VGS @ 10V 1 12 A 160 A 115.2 mJ Pulsed Drain Current 2 EAS Single Pulse Avalanche Energy IAS Avalanche Current 3 48 A 59 W 2 W PD@TC=25℃ Total Power Dissipation 4 PD@TA=25℃ Total Power Dissipation 4 TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-Ambient RθJC Thermal Resistance Junction-Case Data and specifications subject to change without notice. www.fetek.com.tw Ver : A 1 1 Max. Unit --- 62 ℃/W --- 2.1 ℃/W 1 FKBA3006 FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient 2 RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V Reference to 25℃ , ID=1mA --- 0.028 --- V/℃ VGS=10V , ID=30A --- --- 5.5 VGS=4.5V , ID=15A --- --- 9 1.2 --- 2.5 V --- -6.16 --- mV/℃ VDS=24V , VGS=0V , TJ=25℃ --- --- 1 VDS=24V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA m △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=30A --- 43 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.7 ---  Qg Total Gate Charge (4.5V) --- 20 --- Qgs Gate-Source Charge --- 7.6 --- Qgd Gate-Drain Charge --- 7.2 --- Td(on) Turn-On Delay Time --- 7.8 --- VDS=15V , VGS=4.5V , ID=15A uA nC Rise Time VDD=15V , VGS=10V , RG=3.3 --- 15 --- Turn-Off Delay Time ID=15A --- 37.3 --- Fall Time --- 10.6 --- Ciss Input Capacitance --- 2295 --- Coss Output Capacitance --- 267 --- Crss Reverse Transfer Capacitance --- 210 --- Min. Typ. Max. Unit --- --- 81 A --- --- 160 A --- --- 1 V --- 14 --- nS --- 5 --- nC Tr Td(off) Tf VDS=15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter IS Continuous Source Current ISM Pulsed Source Current Conditions 1,5 2,5 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=30A , dI/dt=100A/µs , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is V DD=25V,VGS=10V,L=0.1mH,IAS=48A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Data and specifications subject to change without notice. www.fetek.com.tw Ver : A 2 FKBA3006 FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs Typical Characteristics 180 ID Drain Current (A) 150 120 VGS=10V 90 VGS=7V VGS=5V VGS=3V VGS=4.5V 60 30 0 0 0.5 1 1.5 2 2.5 VDS , Drain-to-Source Voltage (V) 3 Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage 10 12 ID =15A TJ=25℃ VGS , Gate to Source Voltage (V) TJ=150℃ IS(A) 9 6 3 0 0 0.3 0.6 0.9 8 6 VDS=15V VDS=24V 4 2 0 1.2 0 VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics of Reverse 12 18 24 30 QG , Total Gate Charge (nC) 36 42 Fig.4 Gate-Charge Characteristics diode 1.8 Normalized On Resistance 1.8 1.4 1.4 Normalized VGS(th) 6 1.0 1 0.6 0.6 0.2 0.2 -50 0 50 100 TJ ,Junction Temperature (℃ ) Fig.5 Normalized VGS(th) vs. TJ Data and specifications subject to change without notice. www.fetek.com.tw Ver : A 150 -50 0 50 100 150 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ 3 FKBA3006 FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs 10000 1000.00 F=1.0MHz 100us 10.00 10ms 100ms Ciss 1000 ID (A) Capacitance (pF) 10us 100.00 Coss 100 DC 1.00 Crss 0.10 TC=25℃ Single Pulse 10 0.01 1 5 9 13 17 21 25 0.1 1 10 VDS , Drain to Source Voltage (V) 100 1000 VDS (V) Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 P DM 0.01 T ON T D = TON/T SINGLE TJpeak = TC+P DMXRθJC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% BVDSS 1 L x IAS2 x 2 BVDSS BVDSS-VDD VDD IAS 10% VGS Td(on) Tr Ton Td(off) Tf Toff Fig.10 Switching Time Waveform Data and specifications subject to change without notice. www.fetek.com.tw Ver : A VGS Fig.11 Unclamped Inductive Switching Waveform 4