HX24LC64BDRG

HX24LC32B/64B Features ● ● ● ● ● ● ● ● ● ● ● ● ● Wide Voltage Operation - VCC = 1.8V to 5.5V Operating Ambient Temperature: -40℃ to +85℃ Internally Organized: - HX24LC32B, 4096 X 8 (32K bits) - HX24LC64B, 8192 X 8 (64K bits) Two-wire Serial Interface Schmitt Trigger, Filtered Inputs for Noise Suppression Bidirectional Data Transfer Protocol 1 MHz (5V), 400 kHz (1.8V, 2.5V, 2.7V) Compatibility Write Protect Pin for Hardware Data Protection 32-byte Page (32K, 64K) Write Modes Partial Page Writes Allowed Self-timed Write Cycle (5 ms max) High-reliability - Endurance: 1 Million Write Cycles - Data Retention: 100 Years Die Sales: Wafer Form, Waffle Pack ORDERING INFORMATION DEVICE Package Type MARKING Packing Packing Qty HX24LC32BPG DIP8 24LC32 TUBE 2000/box HX24LC64BPG DIP8 24LC64 TUBE 2000/box HX24LC32BDRG SOP8 24LC32 REEL 4000/reel HX24LC64BDRG SOP8 24LC64 REEL 4000/reel HX24LC32BMMRG MSOP8 24LC32 REEL 3000/reel HX24LC64BMMRG MSOP8 24LC64 REEL 3000/reel General Description The HX24LC32B / 64B provides 32,768/65,536 bits of serial electrically erasable and programmable read-only memory (EEPROM) organized as 4096/8192 words of 8 bits each. The device is optimized for use in many industrial and commercial applications where low-power and low-voltage operations are essential. The HX24LC32B / 64B is available in space-saving 8-lead DIP, 8-lead SOP, and 8-lead MSOP packages and is accessed via a two-wire serial interface. 深圳市汉芯半导体有限公司 http://www.hanschip.com 1 2022 MAR HX24LC32B/64B Pin Configuration DIP8/SOP8/MSOP8 Pin Descriptions Table 1: Pin Configuration Pi Pin Designation A0 - A2 SDA SCL WP GND VCC Type I I/O & Open-drain I I P P Name and Functions Address Inputs Serial Data Serial Clock Input Write Protect Ground Power Supply N Block Diagram 深圳市汉芯半导体有限公司 http://www.hanschip.com 2 2022 MAR HX24LC32B/64B Pin Descriptions DEVICE/PAGE ADDRESSES (A2, A1 and A0): The A2, A1 and A0 pins are device address inputs that are hard wired for the HX24LC32B / 64B . Eight 32K/64K devices may be addressed on a single bus system (device addressing is discussed in detail under the Device Addressing section). SERIAL DATA (SDA): The SDA pin is bi-directional for serial data transfer. This pin is open-drain driven and may be wire-ORed with any number of other open-drain or open- collector devices. SERIAL CLOCK (SCL): The SCL input is used to positive edge clock data into each EEPROM device and negative edge clock data out of each device. WRITE PROTECT (WP): The HX24LC32B / 64B has a Write Protect pin that provides hardware data protection. The Write Protect pin allows normal read/write operations when connected to ground (GND). When the Write Protect pin is connected to VCC, the write protection feature is enabled and operates as shown in the following Table 2. Table 2: Write Protect WP Pin Status At VCC At GND Part of the Array Protected HX24LC32B Full (32K) Array HX24LC64B Full (64K) Array Normal Read/Write Operations Memory Organization HX24LC32B , 32K SERIAL EEPROM: Internally organized with 128 pages of 32 bytes each, the 32K requires an 12-bit data word address for random word addressing. HX24LC64B, 64K SERIAL EEPROM: Internally organized with 256 pages of 32 bytes each, the 64K requires a 13-bit data word address for random word address Device Operation CLOCK and DATA TRANSITIONS: The SDA pin is normally pulled high with an external device. Data on the SDA pin may change only during SCL low time periods (see to Figure 1 on page 5). Data changes during SCL high periods will indicate a start or stop condition as defined below. START CONDITION: A high-to-low transition of SDA with SCL high is a start condition which must precede any other command (see to Figure 2 on page 5). STOP CONDITION: A low-to-high transition of SDA with SCL high is a stop condition. After a read sequence, the stop command will place the EEPROM in a standby power mode (see Figure 2 on page 5). ACKNOWLEDGE: All addresses and data words are serially transmitted to and from the EEPROM in 8-bit words. The EEPROM sends a "0" to acknowledge that it has received each word. This happens during the ninth clock cycle. STANDBY MODE: Th e HX24LC32B / 64B features a low-power standby mode which is enabled: (a) upon power-up and (b) after the receipt of the STOP bit and the completion of any internal operations 深圳市汉芯半导体有限公司 http://www.hanschip.com 3 2022 MAR HX24LC32B/64B MEMORY RESET: After an interruption in protocol, power loss or system reset, any two-wire part can be reset by following these steps: 1. Clock up to 9 cycles. 2. Look for SDA high in each cycle while SCL is high. 3. Create a start condition. l Figure 1: Data Validity l Figure 2: Start and Stop Definition ● Figure 3: Output Acknowledge 深圳市汉芯半导体有限公司 http://www.hanschip.com 4 2022 MAR HX24LC32B/64B Device Addressing The 32K and 64K EEPROM devices all require an 8-bit device address word following a start condition to enable the chip for a read or write operation (see to Figure 4 on page 7). The device address word consists of a mandatory "1", "0" sequence for the first four most significant bits as shown. This is common to all the Serial EEPROM devices. The next 3 bits are the A2, A1 and A0 device address bits for the 32K/64K EEPROM. These 3 bits must compare to their corresponding hardwired input pins. The eighth bit of the device address is the read/write operation select bit. A read operation is initiated if this bit is high and a write operation is initiated if this bit is low. Upon a compare of the device address, the EEPROM will output a "0". If a compare is not made, the chip will return to a standby state. Write Operations BYTE WRITE: A write operation requires two 8-bit data word address following the device address word and acknowledgment. Upon receipt of this address, the EEPROM will again respond with a "0" and then clock in the first 8-bit data word. Following receipt of the 8-bit data word, the EEPROM will output a "0" and the addressing device, such as a microcontroller, must terminate the write sequence with a stop condition. At this time the EEPROM enters an internally timed write cycle, t WR, to the nonvolatile memory. All inputs are disabled during this write cycle and the EEPROM will not respond until the write is complete (see Figure 5 on page 7). PAGE WRITE: The 32K/64K EEPROM is capable of a 32-byte page write. A page write is initiated the same as a byte write, but the microcontroller does not send a stop condition after the first data word is clocked in. Instead, after the EEPROM acknowledges receipt of the first data word, the microcontroller can transmit up to 31 (32K, 64K) more data words. The EEPROM will respond with a "0" after each data word received. The microcontroller must terminate the page write sequence with a stop condition (see Figure 6 on page 8). The data word address lower five (32K, 64K) bits are internally incremented following the receipt of each data word. The higher data word address bits are not incremented, retaining the memory page row location. When the word address, internally generated, reaches the page boundary, the following byte is placed at the beginning of the same page. If more than 32 (32K, 64K) data words are transmitted to the EEPROM, the data word address will "roll over" and previous data will be overwritten. ACKNOWLEDGE POLLING: Once the internally timed write cycle has started and the EEPROM inputs are disabled, acknowledge polling can be initiated. This involves sending a start condition followed by the device address word. The read/write bit is representative of the operation desired. Only if the internal write cycle has completed will the EEPROM respond with a "0", allowing the read or write sequence to continue. Read Operations Read operations are initiated the same way as write operations with the exception that the read/write select bit in the device address word is set to "1". There are three read operations: current address read, random address read and sequential read. 深圳市汉芯半导体有限公司 http://www.hanschip.com 5 2022 MAR HX24LC32B/64B CURRENT ADDRESS READ: The internal data word address counter maintains the last address accessed during the last read or write operation, incremented by one. This address stays valid between operations as long as the chip power is maintained. The address "roll over" during read is from the last byte of the last memory page to the first byte of the first page. The address "roll over" during write is from the last byte of the current page to the first byte of the same page. Once the device address with the read/write select bit set to "1" is clocked in and acknowledged by the EEPROM, the current address data word is serially clocked out. The microcontroller does not respond with an input "0" but does generate a following stop condition (see Figure 7 on page 8). RANDOM READ: A random read requires a "dummy" byte write sequence to load in the data word address. Once the device address word and data word address are clocked in and acknowledged by the EEPROM, the microcontroller must generate another start condition. The microcontroller now initiates a current address read by sending a device address with the read/write select bit high. The EEPROM acknowledges the device address and serially clocks out the data word. The microcontroller does not respond with a "0" but does generate a following stop condition (see Figure 8 on page 8). SEQUENTIAL READ: Sequential reads are initiated by either a current address read or a random address read. After the microcontroller receives a data word, it responds with an acknowledge. As long as the EEPROM receives an acknowledge, it will continue to increment the data word address and serially clock out sequential data words. When the memory address limit is reached, the data word address will "roll over" and the sequential read will continue. The sequential read operation is terminated when the microcontroller does not respond with a "0" but does generate a following stop condition (see Figure 9 on page 9). l Figure 4: Device Address l Figure 5: Byte Write 深圳市汉芯半导体有限公司 http://www.hanschip.com 6 2022 MAR HX24LC32B/64B l Figure 6: Page Write l Figure 7: Current Address Read ● Figure 8: Random Read 深圳市汉芯半导体有限公司 http://www.hanschip.com 7 2022 MAR HX24LC32B/64B ● Figure 9: Sequential Read Electrical Characteristics l Absolute Maximum Stress Ratings DC Supply Voltage . . . . . . . . . . . . . . . . .-0.3V to +6.5V Operating Ambient Temperature . . . . . -40℃ to +85 ℃ Input / Output Voltage . . . . . . . .GND-0.3V to V CC+0.3V Storage Temperature . . . . . . . . . . . . -65℃ to +150℃ l Comments Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to this device. These are stress ratings only. Functional operation of this device at these or any other conditions above those indicated in the operational sections of this specification is not implied or intended. Exposure to the absolute maximum rating conditions for extended periods may affect device reliability. DC Electrical Characteristics Applicable over recommended operating range from: TA = -40℃ to +85℃, VCC = +1.8V to +5.5V (unless otherwise noted) Parameter Supply Voltage Supply Current Vcc=5.0V Supply Current Vcc=5.0V Standby Current Input Leakage Current Output Leakage Current Input Low Level Input High Level Output Low Level Vcc=5.0V Output Low Level Vcc=3.0V Output Low Level Vcc=1.8V 深圳市汉芯半导体有限公司 http://www.hanschip.com Symbol Vcc Icc1 Icc2 ISB ILI ILO V IL VIH VOL3 VOL2 VOL1 Typ. 0.4 2.0 0.05 - Min. 1.8 -0.6 Vcc×0.7 - 8 Max. 5.5 1.0 3.0 2.0 3.0 3.0 Vcc×0.3 Vcc + 0.5 0.4 0.4 0.2 Unit V mA mA uA uA uA V V V V V Condition Read @100KHz Write @100KHz Vin=Vcc or GND Vin=Vcc or GND Vout=Vcc or GND IOL=3.0mA IOL=2.1mA IOL=0.15mA 2022 MAR HX24LC32B/64B Pin Capacitance Applicable over recommended operating range from TA = 25℃, f = 1.0 MHz, VCC = +1.8V Parameter Input/Output Capacitance (SDA) Input Capacitance (A0, A1, A2, SCL) Symbol C I/O C IN Min. - Typ. - Max. 8 6 Unit pF pF Condition VI/O = 0V VIN = 0V AC Electrical Characteristics Applicable over recommended operating range from TA = -40℃ to +85℃, VCC = +1.8V to +5.5V, CL = 1 TTL Gate and 100 pF (unless otherwise noted) fSCL tLOW tHIGH tI tAA Min. 1.2 0.6 0.05 1.8-volt Typ. - Max. 400 50 0.9 Min. 0.6 0.4 0.05 5.0-volt Typ. - Max. 1000 40 0.55 tBUF 1.2 - - 0.5 - - tHD.STA tSU.STA tHD.DAT tSU.DAT tR tF tSU.STO tDH tWR 0.6 0.6 0 100 0.6 50 - - 0.3 300 5 0.25 0.25 0 100 0.25 50 - - 0.3 100 5 Endurance 1M - - - - - Parameter Symbol Clock Frequency, SCL Clock Pulse Width Low Clock Pulse Width High Noise Suppression Time Clock Low to Data Out Valid Time the bus must be free before a new transmission can start Start Hold Time Start Setup Time Data In Hold Time Data In Setup Time Inputs Rise Time(1) Inputs Fall Time(1) Stop Setup Time Data Out Hold Time Write Cycle Time 5.0V, 25℃, Byte Mode Units KHz us us us us us us us us ns us ns us ns ms Write Cycles Note 1. This parameter is characterized and is not 100% tested. 2. AC measurement conditions: RL (connects to VCC): 1.3 kΩ (2.5V, 5V), 10 kΩ (1.8V) Input pulse voltages: 0.3 VCC to 0.7 VCC Input rise and fall time: ≤50 ns Input and output timing reference voltages: 0.5 VCC The value of RL should be concerned according to the actual loading on the user's system. 深圳市汉芯半导体有限公司 http://www.hanschip.com 9 2022 MAR HX24LC32B/64B Bus Timing Figure 10: SCL: Serial Clock, SDA: Serial Data I/O Write Cycle Timing l Figure 11: SCL: Serial Clock, SDA: Serial Data I/O Note 1. The write cycle time tWR is the time from a valid stop condition of a write sequence to the end of the internal clear/write cycle. 深圳市汉芯半导体有限公司 http://www.hanschip.com 10 2022 MAR HX24LC32B/64B PACKAGE SOP8  

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 2022 MAR HX24LC32B/64B Important statement: Shenzhen Hanschip semiconductor co.,ltd. reserves the right to change the products and services provided without notice. Customers should obtain the latest relevant information before ordering, and verify the timeliness and accuracy of this information. Customers are responsible for complying with safety standards and taking safety measures when using our products for system design and machine manufacturing to avoid potential risks that may result in personal injury or property damage. Our products are not licensed for applications in life support, military, aerospace, etc., so we do not bear the consequences of the application of these products in these fields. Our documentation is only permitted to be copied without any tampering with the content, so we do not accept any responsibility or liability for the altered documents. 深圳市汉芯半导体有限公司 http://www.hanschip.com 13 2022 MAR