INN650D260A

INN650D260A 650V GaN Enhancement-mode Power Transistor INN650D260A 1. General description 650V GaN-on-silicon Enhancement-mode Power Transistor in Dual Flat No-lead package (DFN) with 8 mm × 8 mm size 2. Features  Enhancement mode transistor-Normally off power switch  Ultra high switching frequency  No reverse-recovery charge  Low gate charge, low output charge  Qualified for industrial applications according to JEDEC Standards  ESD safeguard  RoHS, Pb-free, REACH-compliant D 1 3. Applications D D 8  AC-DC converters  DC-DC converters  Totem pole PFC  Fast battery charging  High density power conversion  High efficiency power conversion D D D D D G SK S S 4. Key performance parameters Table 1 Key performance parameters at Tj = 25 °C Parameter Value Unit VDS,max 650 V RDS(on),max @ VGS = 6 V 260 mΩ QG,ty p @ VDS = 400 V 2 nC ID,pulse 22 A QOSS @ VDS = 400 V 19 nC Qrr @ VDS = 400 V 0 nC 5. Pin information Table 2 Pin information Gate Drain Kelvin Source Source 8 1,2,3,4 7 5,6 Table 3 Ordering information Type/Ordering Code Package Marking INN650D260A DFN 8X8 INN65D260A Page 1 POWER THE FUTURE www.innoscience.com.cn Datasheet Rev. 1.0 2021/04/13 INN650D260A 650V GaN Enhancement-mode Power Transistor Table of contents 1. General description............................................................................................. 1 2. Features ................................................................................................................ 1 3. Applications ......................................................................................................... 1 4. Key performance parameters ............................................................................ 1 5. Pin information .................................................................................................... 1 6. Maximum ratings................................................................................................. 3 7. Thermal characteristics...................................................................................... 4 8. Electric characteristics....................................................................................... 5 9. Electric characteristics diagrams ..................................................................... 7 10.Package outlines ............................................................................................... 13 11.Revision history................................................................................................. 14 Page 2 POWER THE FUTURE www.innoscience.com.cn Datasheet Rev. 1.0 2021/04/13 INN650D260A 650V GaN Enhancement-mode Power Transistor 6. Maximum ratings at Tj = 25 °C unless otherwise specified. Continuous application of maximum ratings can deteriorate transistor lifetime. For further information, contact Innoscience sales office. Table 4 Maximum ratings Parameter Values Symbol Unit Note/Test Condition 650 V VGS = 0 V, ID = 20 μA - 750 V VGS = 0 V, VDS = 750 V - - 12 A Tc = 25 °C ID,pulse - - 22 A ID,pulse - - 15 A -1.4 - +7 V Min. Typ. Max. VDS,max - - VDS(transient) - Continuous current, drain source ID Pulsed current, drain source 2 Pulsed current, drain source 2 Drain source voltage Drain source voltage transient 1 Gate source voltage, continuous 3 VGS Tc = 25 °C; VG = 6 V; See Figure 16; Tc = 125 °C;VG = 6 V; See Figure 17; Tj = -55 °C to 150 °C Tj = -55 °C to 150 °C; Gate source voltage, pulsed VGS,pulse -20 - +10 V tPULSE = 50 ns, f = 100 kHz open drain Power dissipation Ptot - - 75 W Operating temperature Tj -55 - +150 ˚C Storage temperature Tstg -55 - +150 ˚C 1 V DS(transient) is intended for surge rating during non-repetitive events, tPULSE < 1 µs 2 Pulse = 300 µs 3 The minimum V GS is clamped by ESD protection circuit, as show n in Figure 10 Tc = 25 °C Page 3 POWER THE FUTURE www.innoscience.com.cn Datasheet Rev. 1.0 2021/04/13 INN650D260A 650V GaN Enhancement-mode Power Transistor 7. Thermal characteristics Table 5 Thermal characteristics Parameter Symbol Thermal resistance, junction-case Reflow soldering temperature Values Unit Min. Typ. Max. RthJC - - 1.65 °C/W Tsold - - 260 °C Note/Test Condition MSL3 Page 4 POWER THE FUTURE www.innoscience.com.cn Datasheet Rev. 1.0 2021/04/13 INN650D260A 650V GaN Enhancement-mode Power Transistor 8. Electric characteristics at Tj = 25 °C, unless specified otherwise Table 6 Static characteristics Parameter Symbol Gate threshold voltage VGS(th) Drain-source leakage current IDSS Gate-source leakage current IGSS Drain-source on-state resistance Gate resistance Table 7 RDS(on) RG Values Unit Note/Test Condition Min. Typ. Max. 1.2 1.6 2.2 - 1.9 - - 2 20 - 10 120 - 40 - µA VGS = 6 V; VDS = 0 V - 165 260 mΩ VGS = 6 V; ID = 3 A; Tj = 25 °C - 322 - mΩ VGS = 6 V; ID = 3 A; Tj = 150 °C - 2 - Ω f = 5 MHz; open drain Unit Note/Test Condition V µA ID = 11 mA; VDS = VGS; Tj = 25 °C ID = 11 mA; VDS = VGS; Tj = 125 °C VDS = 650 V; VGS = 0 V; Tj = 25 °C VDS = 650 V; VGS = 0 V; Tj = 150 °C Dynamic characteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 73 - pF VGS = 0 V; VDS = 400 V; f = 100 kHz Output capacitance Coss - 20 - pF VGS = 0 V; VDS = 400 V; f = 100 kHz Reverse transfer capacitance Crss - 0.2 - pF VGS = 0 V; VDS = 400 V; f = 100 kHz Co(er) - 27 - pF VGS = 0 V; VDS = 0 to 400 V Co(tr) - 43 - pF VGS = 0 V; VDS = 0 to 400 V Output charge QOSS - 19 - nC VGS = 0 V; VDS = 0 to 400 V Turn-on delay time td(on) - 3 - nS See Figure 22 Turn-off delay time td(of f) - 4 - nS See Figure 22 Rise time tr - 7 - nS See Figure 22 Fall time tf - 4 - nS See Figure 22 Effective output capacitance, energy related 1 Effective output capacitance, time related 2 1 CO(er) is the fixed capacitance that gives the same stored energy as COSS w hile V DS is rising from 0 to 400 V 2 CO(tr) is the fixed capacitance that gives the same charging time as COSS w hile V DS is rising from 0 to 400 V Page 5 POWER THE FUTURE www.innoscience.com.cn Datasheet Rev. 1.0 2021/04/13 INN650D260A 650V GaN Enhancement-mode Power Transistor Table 8 Gate charge characteristics Parameter Symbol Gate charge Values Unit Note/Test Condition Min. Typ. Max. QG - 2 - nC Gate-source charge QGS - 0.18 - nC Gate-drain charge QGD - 0.62 - nC Gate Plateau Voltage VPlat - 2.3 - V VDS = 400 V; ID = 3 A Unit Note/Test Condition Table 9 VGS = 0 to 6 V; VDS = 400 V; ID = 3 A Reverse conduction characteristics Parameter Symbol Source-Drain reverse voltage Values Min. Typ. Max. VSD - 2.7 - V VGS = 0 V; ISD = 3 A Pulsed current, reverse IS,pulse - - 22 A VG = 6 V Reverse recovery charge Qrr - 0 - nC ISD = 3 A; VDS = 400 V Reverse recovery time trr - 0 - ns Peak reverse recovery current Irrm - 0 - A Page 6 POWER THE FUTURE www.innoscience.com.cn Datasheet Rev. 1.0 2021/04/13 INN650D260A 650V GaN Enhancement-mode Power Transistor 9. Electric characteristics diagrams at Tj = 25 °C, unless specified otherwise Figure 1 Typ. output characteristics Figure 2 Typ. output characteristics ID = f(VDS,VGS); Tj = 25 °C ID = f(VDS,VGS); Tj = 125 °C Figure 3 Typ. Drain-source on-state resistance Figure 4 Typ. Drain-source on-state resistance RDS(on) = f(IDS,VGS); Tj = 25 °C RDS(on) = f(IDS,VGS); Tj = 125 °C Page 7 POWER THE FUTURE www.innoscience.com.cn Datasheet Rev. 1.0 2021/04/13 INN650D260A 650V GaN Enhancement-mode Power Transistor Figure 5 Typ. channel reverse characteristics Figure 6 Typ. channel reverse characteristics ID = f(VDS,VGS); Tj= 25 °C ID = f(VDS,VGS); Tj = 125 °C Figure 7 Typ. channel reverse characteristics Figure 8 Typ. channel reverse characteristics ID = f(VDS,VGS); Tj = 25 °C ID = f(VDS,VGS); Tj = 125 °C Page 8 POWER THE FUTURE www.innoscience.com.cn Datasheet Rev. 1.0 2021/04/13 INN650D260A 650V GaN Enhancement-mode Power Transistor Figure 9 Typ. transfer characteristics Figure 10 ID = f(VGS); VDS= 3 V IG = f(VGS); Ig reverse turn on by ESD unit Figure 11 Typ. Gate-to-Source leakage Drain-source leakage characteristics IDSS = f(VDS); VGS = 0 V Page 9 POWER THE FUTURE www.innoscience.com.cn Datasheet Rev. 1.0 2021/04/13 INN650D260A 650V GaN Enhancement-mode Power Transistor Figure 12 Gate threshold voltage Figure 13 Drain-source on-state resistance VTH = f(Tj); VGS = VDS; ID = 11 mA RDS(on) = f(Tj); ID = 3 A; VG=6V Figure 14 Figure 15 Ptot = f(TC ) Power dissipation Max.transient thermal impedance ZthJC = f(tP, D) Page 10 POWER THE FUTURE www.innoscience.com.cn Datasheet Rev. 1.0 2021/04/13 INN650D260A 650V GaN Enhancement-mode Power Transistor Figure 16 Safe operating area Figure 17 Safe operating area ID = f(VDS); TC = 25 °C ID = f(VDS); TC = 125 °C Figure 18 Figure 19 Typ. gate charge VGS = f(QG); VDCLINK = 400 V; ID = 3 A Typ. capacitances CXSS = f(VDS)；Freq. = 100 kHz Page 11 POWER THE FUTURE www.innoscience.com.cn Datasheet Rev. 1.0 2021/04/13 INN650D260A 650V GaN Enhancement-mode Power Transistor Figure 20 Typ. output charge Figure 21 Typ. COSS stored Energy QOSS = f(VDS)；Freq. = 100 kHz EOSS = f(VDS)；Freq. = 100 kHz Figure 22 Figure 23 Typ.Switching times with inductive load Typ.Switching times waveform VDS=400V, ID =5A, Lload=800uH, VGS=6V, Ron=10Ω, Rof f =2Ω, Rgs =10kΩ Page 12 POWER THE FUTURE www.innoscience.com.cn Datasheet Rev. 1.0 2021/04/13 INN650D260A 650V GaN Enhancement-mode Power Transistor 10. Package outlines SYMBOL A A1 A2 b D D1 D2 E E1 E2 E3 e L DIMENSION NOM 0.90 0.02 0.203 Ref 1.00 8.00 B.S.C 6.94 0.50 8.00 B.S.C 1.00 3.20 2.80 2.00 B.S.C 0.50 MIN 0.80 0.00 --0.95 6.84 0.40 0.90 3.10 2.70 0.40 MAX 1.00 0.05 --1.05 7.04 0.60 1.10 3.30 2.90 0.60 NOTE: All dimensions in mm 8 7 6 5 INNO XXXXXXXX 1 XXXXXXXX Row Description Example YYWW Row1 Company name INNO Row2 Product Name(In short) XXXXXXXX Row3 ASSY lot No. XXXXXXXX 2 3 4 Notes: (1) Dimension and tolerance conform to ASME Y14.5-2009. (2) All Dimensions are in millimeters. (3) Lead coplanarity shall be 0.1 millimeters max. (4) Complies with JEDEC MO-229. (5) Drawing is not to scale. Page 13 POWER THE FUTURE www.innoscience.com.cn Datasheet Rev. 1.0 2021/04/13 INN650D260A 650V GaN Enhancement-mode Power Transistor 11. Revision history Major changes since the last revision Revision Date Description of changes 1.0 2021-4-13 1.0 version release Page 14 POWER THE FUTURE www.innoscience.com.cn Datasheet Rev. 1.0 2021/04/13